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These properties are generally valid for materials with the same topology, that is for magnetic moments on the pyrochlore lattice.

这种构成对拥有相同的拓扑结构的物质来说通常是正确的。这个就是在烧绿石晶格上的磁矩。

These properties are generally valid for materials with the same topology, that is for magnetic moments on the pyrochlore lattice.

一般来说，这些属性对于具有相同拓扑结构的材料来说都是适用的。

It is expressed as a function of the temperature expansion coefficients of the crystal lattice, their remanent polarization and other parameters.

用&纯&PbZr_xTi_(1-xO_3的实验数据代入表达式计算，得到准同型相界附近组成的T_对Zr/Ti的关系曲线，与实验结果较好地符合。

The influences of conditions, such as the different elements in A site, reaction temperature and the reoxidation time etc.on partial catalytic oxidation of AFeO 3 catalyst are reviewed. The results show that the lattice oxygen from AFeO 3 pervoskite catalyst in A site occupied ...

结果表明，稀土金属(La ，Nd ，Sm ，Eu)占据A位的AFeO3钙钛矿型催化剂中的晶格氧适于甲烷选择性氧化制合成气，在完全氧化的LaFeO3催化剂上存在少量的强氧化性氧物种，通过控制再氧化条件，可使CH4 在LaFeO3催化剂的作用下，高转化率(～ 92 %)、高选择性(96 %)地生成合成气。

The two stage telescopic lattice frame is composed of three boom sections sleeve-mounted together, tail end of the outmost basic boom frame is pivot-connected respectively with slewing mechanism and luffing mechanism on the chassis; the inner two section booms can telescope freely like a retractive antenna to change the delivering distance of the conveyor and the operating radius.

两级伸缩臂架由套装在一起的三节臂架组成，最外层的基础节臂架尾部和底盘的回转机构、变幅机构分别铰接，固定于底盘上；内层的两节臂架可如拉杆天线一般自由伸出和缩回，改变输递机的输送距离，从而改变施工半径。

The dependence of structural parameters including lattice constants, rhombohedral angle, and atomic coordinates on pressure was also studied.

对锗R8相结构参数的压力依赖性也进行了研究，包括晶格常数、伞状角、原子位置参数随压力的变化情况。

It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.

众所周知，晶格失配和热应力失配是GaN异质外延中位错产生的主要原因；为此，我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试，其中尝试了侧向外延生长技术，得到了低位错密度（小于10〓/cm〓）、高质量的GaN外延层；尝试多低温缓冲层法，发现材料中的应力特性与生长系统和生长条件有关，材料中的应力与位错密度按相反方向变化；首次尝试高低温联合缓冲层法，材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大，从而导致随后高温GaN外延膜中位错密度降低，并且能够有效地抑制黄光峰。

The lattice of SAPO molecular sieves is not rigid after template removal and are very sensitive to adsorbates even at room temperature.

小晶粒的SAPO-34分子筛和金属修饰的SAPO-34分子筛的稳定性降低，MTH反应加剧了分子筛脱硅。

XRD results reveal that the addition of HF decreases the defects in the crystal lattice of SAPO 34, which is proved by the two distinct double peaks at 2 θ=26°and 31° and other ...

以氟化氢三乙胺复合模板剂合成的分子筛，在催化甲醇制低碳烯烃反应中结焦速率降低，生成乙烯及丙烯的选择性则略有提高

The divisible semiring congruence on S was characterized. A one-toone, inclusion-preserving mapping from the set of full, closed, self-conjugate subsemirings of S to the set of divisible semiring congruence on S was established. A result for the divisible semiring congruence lattice was obtained.

给出了这类半环上可除半环同余的一种刻画，建立了S上的可除半环同余与满、闭、自共轭理想子半环的保序一一对应，得到了可除半环同余格的一个结果。

Do you know, i need you to come back

你知道吗，我需要你回来

Yang yinshu、Wang xiangsheng、Li decang,The first discovery of haemaphysalis conicinna.

1〕 杨银书，王祥生，李德昌。安徽省首次发现嗜群血蜱。