查询词典 k

The vertical electric field of the buried layer is enhanced due to the low k of the dielectric buried layer at the drain side,the electric field in the drift region is modulated by the compound dielectric layer with different k values,and both increase the breakdown voltage of the device.

CDL SOI结构利用漏端低k介质增强埋层纵向电场，具有不同k值的复合介质埋层调制漂移区电场，二者均使耐压提高。

So, we propose a rule to calculate the k〓k〓 terms, and obtain the non-negative baryon spectral function which has the correct threshold.

为此我们提出了一个计算k〓k〓项的方法，据此可以使谱表示有正确的阈值，同时谱函数不取负值。

In the ω meson propagator there are two k〓k〓 terms, the longitudinal term is unrenormalizable, so it is difficult to take account of it when the baryon current conservation is violated.

矢量介子传播子中含有两个k〓k〓项，其中纵向项是不可重整化的，因此在流守恒被破坏时完全顾及这项的贡献是有困难的。

High-profile Korean striker Ahn Jung-hwan, who recently signed up with K-League giants Suwon Bluewings in an attempt to regain his place in the national team before the AFC Asian Cup 2007, spoke to www.the-afc.com in an exclusive interview about his move to the K-League, how he dealt with his short-term layoff and future expectations.

高调韩国前锋i榕焕最近签署了谁的K联赛巨人水源bluewings企图夺回他在国家队 2007年亚洲杯足球赛之前，曾和 www.the-islander.org ，2000年afc.com专访时对他提出的K-联赛他如何处理他的短期裁员和未来的期望。

We have to specify "K" upfront and give the algorithm an estimate of the centroids of these "K" clusters.

我们必须指定的&K&前期，给算法是这些&k&的集群的重心估计。

An improved K-Means Algorithm based on Density is presented,with which K value of clustering number is located according to the clustering objects distribution density of regional space,and it uses centroids of high -density region as initial clustering center points.

该算法采用聚类对象区域空间的密度分布方法来确定聚类个数K的值，然后用高密度区域的质心作为K-Means算法的初始聚类中心。

The method of freeze-thawing plus proteinase K plus sonication provided the highest copy number of COWP gene.

冻融法+蛋白酶K法+声裂法提纯隐孢子虫卵囊DNA效果最佳，其次为冻融法+声裂法和蛋白酶K法+声裂法，冻融法+蛋白酶K法效果最差。

One is low valence vanadium oxide thin films were deposited by direct current facing target magnetron sputtering firstly, and then thermal oxidated; the other is high valence vanadium oxide thin films were deposited by ion beam sputtering, then thermal deoxidated. Vanadium oxide thin films with phase transition were obtained at the lower thermal process temperature 300℃, which is compatible with MEMS technologys. The composition of VO_x thin film fabricated by first method includes mainly VO_2, V2O3 and VO_, the TCR is -2.25%/K, the TCR gradually increases with phase transition temperature decreases. The composition of VO_x thin film fabricated by the second method includes mainly VO_2, V2O5 and V2O3 , and the resulting VO_x thin filmTCR is -3.0%/K. The TCR of phase transition vanadium oxide thin films made by second method is higher than that made by first method for the existance of V2O5 in thin films.

分别采用直流对靶磁控溅射制备低价态氧化钒薄膜再附加热氧化处理的方式，和射频离子束溅射制备高价氧化钒薄膜附加热还原处理的方式获得了具有相变特性的氧化钒薄膜，第一种方式获得相变特性氧化钒薄膜的热处理温度最低为300℃，克服了以往高温条件下热处理不能与MEMS工艺兼容的缺点；相变特性氧化钒薄膜的组分以VO_2为主，含有V2O3和VO_，室温TCR为-2.25%/K；室温电阻温度系数随相变温度的降低逐渐升高；采用第二种方式获得的相变氧化钒薄膜的组分以VO_2为主，含有V2O5和V2O3，室温TCR可达-3.0%/K；分析发现，具有相变特性的氧化钒薄膜中含有V2O5时，室温电阻温度系数明显增大。

At coverages of 2~3 monolayers, 1,3-Diiodobenzene desorbs molecularly at 247 K (second-layer) and 234 K (third-layer).

在高曝露量下(2~3 monolayer)，1，3-Diiodobenzene的分子性脱附出现在247 K和234 K。

These bases are produced by k-adic dilations and translates of integers of k-1 smooth functions which decay as polynomials.

这组基由k—1个具有多项式衰减速度的光滑函数经过k进伸缩与整数平移生成。

I didn't watch TV last night, because it .

昨晚我没有看电视，因为电视机坏了。

Since this year, in a lot of villages of Beijing, TV of elevator liquid crystal was removed.

今年以来，在北京的很多小区里，电梯液晶电视被撤了下来。