查询词典 junction

The design rules of silicon low temperature bipolar junction transistor are obtained from the simulation results. One way is that the concentrations of emitter and base are decreased on the base of the normal bipolar junction transistor. Another way is that base concentration is higher than that of emitter, i.

模拟了普通常温工作的双极晶体管在低温下性能的退变，如电流增益、截止频率、基极电阻和基极-发射极电容等，模拟结果和解析模型分析的结果一致，并与常温的结果作了对比分析。

And the pn-junction diode, the bipolar junction transistor, the metal-oxide-semiconductor capacitor, and the field-effect transistor are covered in 2nd part.

除此之外，针对现在主流的MOS器件与工艺，讨论现代MOSFET的发展趋势。

In order to get the optimal noisy matching,analyzed and compared inside resistance and noise characteristics of bipolar junction transistor、integrated operation amplifier and junction field-effect transistorand the characteristics of three coupled modes.

为了达到最佳噪声匹配，分析比较了双极型晶体管、集成运放及场效应管的内阻、噪声特性及三种不同耦合方式的特点，从而总结出对于低内阻信号源较理想的前置放大器的有源器件是单级或多级并联双极型晶体管。

Methods 30 adult cadavers were dissected by regional anatomy through manubrium sterni and medial 1/3 clavicle resection,simulating anterior approach to the cervicothoracic junction of the spinal column,some important structures anterior to the body of the cervicothoracic junction of the spinal column were analysed and measured.

方法供局解教学操作使用的成人尸体30具(男25、女5)，模拟经胸骨柄和部分锁骨切除的颈胸段脊柱前路术式，采用连续层次解剖方法，重点观测手术途径中暴露C5~T3椎体时必须牵开并加以保护的几个重要结构。

The hybrid density functional theory is used to study formation of the junction of alkanemonothiol molecules with different terminal groups. The relationship between geometric structures of the molecular junction and the external force is obtained.

利用杂化密度泛函理论，研究了以甲基、醇基、羧基为末端基团的烷烃硫醇分子与金电极形成分子结的过程，得到了分子结的几何结构与外加压力的关系。

Regarding to different successful ablation monitoring indicatives, patients were divided into ablation group in traditional methodand ablation group with atria pacemaking showing slow pathway conduction block as successful ablation indicative.86of groupⅰ presented junction rhythm in dischargeing 15s or early pacemade then consecutively discharged 60～90 seconds; in groupⅱ 67 patients after dischargeing 15s showed junction rhythm or after early pacemaking delayed dischargeing to 20s then stopped dischargeing.

按不同的有效消融判断指标分为传统方法消融组和以心房起搏显示慢径前传导阻滞作为有效消融指标消融组。i组86例在放电后15 s内以出现交界心律或早搏后继续放电60~90 s；ii组67例放电15 s内出现交界心律或早搏后延迟放电至20 s停止放电，以术前av1﹕1最短间期心房刺激（s1s1）显示慢径前传阻滞后停止起搏继续放电至60 s。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.

热谱分析方法成功解决了上述难题，将对半导体器件可靠性分析产生重大影响，具有重要意义和重大的经济实用价值。

They are expected to start at junction 31, near Castleford, and head westwards to junction 26 south of Bradford.

预期他们将开始在交界处的31日，近castleford ，和头部向西，以交界处的26以南的德福德。

I think it's junction 30. Past Worksop.- We think junction 30. Heading North.

应该是过服务区的30号界点-感觉是30号界点北向

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。