查询词典 junction transistor

A control circuit is connected to the field effect transistor and provides a current through a control current path to produce the field effect transistor input voltage.

控制电路连接到场效应晶体管并提供通过控制电流路径的电流以产生场效应晶体管输入电压。

And highlights the DNA field effect transistor sensor of the study process, embodies the DNA field effect transistor sensor is small in size, light weight, easy to implement integration features in the development of multiple genes simultaneously testing has irreplaceable advantages.

并着重介绍了DNA场效应晶体管传感器的实验研究过程，体现了DNA场效应管传感器具有体积小、重量轻、易于实现集成化的特点，在发展多基因同步检测方面有着不可替代的优势。

As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

接着我们把掺氮ZnO薄膜作为沟道层材料，用Si3N4做栅绝缘层在非晶玻璃上制备了ZnO基薄膜晶体管，ZnO-TFT器件表现出了典型的场效应晶体管的输出特性。

The first vertical-type transistor we fabricate is static induction transistor, and it provides a current on/off ratio of 4 and a high current output in the order of milliampere.

这可以解释厚度所造成的低注入是由於陷阱所造成的。我们最初的垂直式有机电晶体是静态感应电晶体，它可以提供电流的开/关比为4，以及毫安培等级的电流输出。

In recent years, SiC FET power transistor and GaN high electron movability power transistor represent the third generation semiconductor-wide bandgap semiconductor power devices, have advantages of high breakdown voltage, high power density, as well as high output power, high operation efficiency, high operation frequency, wide instant aneous bandwidth, operation in high temperature environment and strong ability of resisting radiation.

近年来以SiC场效应功率晶体管和GaN高电子迁移率功率晶体管为代表的第三代半导体－宽禁带半导体功率器件具有击穿电压高、功率密度高、输出功率高、工作效率高、工作频率高、瞬时带宽宽、适合在高温环境下工作和抗辐射能力强等优点。

A power transistor sometimes has an associated sense transistor.

有时一个功率管会有一个相关的敏感管。

There is sufficient margin for a collector loss in a power transistor, and the high speed high fT transistor which was moreover excellent in the high region property is adopted.

的截止频率是90MHz的数量，并抑制这种晶体管的开关失真是无法避免公司一流的，而且，还实现了平坦的高区域相反应。

However, because of the obvious snapback breakdown characteristic of NMOS transistor and the layout geometry effect on the distributed base resistance of each parasitic lateral bipolar transistor, multi-finger NMOS cannot be triggered on uniformly under ESD stress.

然而由於N型金氧半电晶体具有明显的骤回崩溃特性，以及布局上每根指状N型寄生横向双载子电晶体之等效基极电阻之不同，造成多指状结构N型金氧半电晶体在静电放电轰击下，并不会均匀的导通来排放静电放电电流，而是集中於某些指状N型金氧半电晶体。

Taking frequency conversion of semiconductor transistor as an example, the basic principles and some problems related are introduced in the article, integrating emitter-injected frequency conversion circuit of transistor, which is often used in superheterodyne to discuss about it.

分析了变频的基本原理和设计变频器的有关注意问题；从三极管输入回路和输出回路的信号入手，讨论了超外差式收音机常用的变频电路的工作原理。

The design for impedance converting circuit of input current,transistor amplifying circuit and converting circuit of output current is presented.The telegrapher equations are adopted to determine the impedance of transmission-line transformer,which is used to convert circuit impedance between signal source and transistor.

讨论了放大器输入回路阻抗变换电路、晶体管放大电路以及输出回路阻抗变换电路的设计思想，运用电报方程从理论上推导出用于信号源和晶体管之间阻抗变换的传输线变压器输入输出阻抗计算公式，由此设计出模拟信号处理电路中非常重要的AB类高功率放大器。

As of Tuesday, Google's results were still censored in China.

截至周二，谷歌的搜索结果仍受中国审查。

In order to make the positive action increase and negative one decrease, the sub-forces of the social factors must be adjusted to form a centripetal force.

在这一过程中，人的主体性发挥是社会有机体健康发展的灵魂。