查询词典 junction diode

You can almost always determine the leads of a bipolar transistor with an ohm meter. b-e and b-c junctions will measure like a diode with the b-c junction reading slightly lower than the b-e junction when forward biased.

你几乎总是可以用欧姆表来判断双极性晶体管的脚位。b-e结和b-c结将像二级管那样测量，而且正向偏置时，b-c结的读数稍微比b-e结低一点。

B-e and b-c junctions will measure like a diode with the b-c junction reading slightly lower than the b-e junction when forward biased.

发射结和集电结跟二极管差不多，集电结正向偏置时的读数要稍小于发射结。

In this paper,the design principles and methods of the super-abrupt junction GaAs varactor diode has been discussed.

本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。

In addition, in comparing of the junction temperature and the light-emitting diode spectrum, we see the junction temperature has certain effect to the decay of the light output power of light-emitting diodes.

另外，在接面温度与发光二极体光谱的比较方面，我们也从实验上知道接面温度在发光二极体的光输出衰减方面有一定的影响。

At the base and near the p-n junction interface when diode is working under the applied alternating current.

基于p-n结二极管的理想工作状态的基本假定，推导了二极管在交流电下工作时其基区和p-n结分界面附近上的时间常数与二极管空间尺寸、扩散长度、载流子寿命和外加交流电频率等的依赖关系。

To better match the characteristics of the two PN junctions (the diode junction and the transistor base-emitter junction), a transistor may be used in place of a regular diode, like this

为了更好地匹配两个PN结地特性（二极管PN结和晶体管发射结），可以用晶体管代替二极管，如图。

For the traditional diode string, the parasitic p-n-p bipolar junction transistor devices in the diode string will induce a large leakage current into the substrate, especially under high temperature condition.

因为寄生元件的存在，传统的二极体串将会产生严重的基极漏电流问题，尤其是在高温的状态下。

Resistor R21 and capacitor C24 form a snubber network that suppresses transient overvoltage ringing at diode D1 caused by transformer T1 leakage inductance and diode D1 junction capacitance.

电阻R21和电容C24的形成缓冲网络，抑制瞬态过电压在由变压器T1的漏感和二极管D1的结电容二极管D1引起振铃。

The n-type gate modulation could be explained by the bending effect of valence band in the Schottky-barrier junction. The photoconductive diode and optical switch behavior was demonstrated for the first time from a C/CNX multi-walled nanotube junction with a Schottky barrier. Theconductivity of nanotube can be reversibly changed by 3 to 4 orders of magnitude when the 5 mW cm2 white lights was turned on and off.

器件原理是栅极静电场调节碳纳米管和CNx纳米管间的Schottky势垒的高度和宽度，从而影响载流子的传输。8首次利用单根CN万／C纳米管作为半导体材料制备了Schottky光导二极管和光开关。

Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.

电子学实验( S0704)(1，1)/应用电子学实验( S0472)(1，1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。

With Death guitarist Schuldiner adopting vocal duties, the band made a major impact on the scene.

随着死亡的吉他手Schuldiner接受主唱的职务，乐队在现实中树立了重要的影响。

But he could still end up breakfasting on Swiss-government issue muesli because all six are accused of nicking around 45 million pounds they should have paid to FIFA.

不过他最后仍有可能沦为瑞士政府&议事餐桌&上的一道早餐，因为这所有六个人都被指控把本应支付给国际足联的大约4500万英镑骗了个精光。