查询词典 isoelectronic

Hexagonal boron nitride is isoelectronic and structural similar to graphite. But no intercalation compounds of hBN have been reported.

六方氮化硼与石墨是等电子且结构相似的，但六方氮化硼层间化合物却未见有报道。

The solution to identifying the source of the spectral lines came only in 1939, with the extrapolation along isoelectronic sequences from lower states of ionization to discover that the 'coronium' lines were actually emitted by highly ionized states of elements such as iron, calcium and nicke.

在1939年解决谱线的来源，由处于低状态电离的标准电子次序推断发现其谱线实际上是由处于强电离状态的元素所激发，例如铁，钙，镍。

B3LYP /aug-cc-pvDZ level of theory is applied to study the geometric structures, hyperconjugation and exchange repulsion of 13 isoelectronic equivalents of benzene obtained by successive replacement of CH groups by nitrogen atoms in benzene. More attention is paid to discussing how the energetic properties change upon the number of N atoms.

采用密度泛函理论的B3LYP方法在aug-cc-pvDZ基组上研究了13种苯及其含氮等电子体化合物的分子结构、能量和异构体相对稳定性，重点考察了含氮量对化合物含能性质的影响。

B3LYP/aug-cc-pvDZ level of theory is applied to study the geometric structures, hyperconjugation and exchange repulsion of 13 isoelectronic equivalents of benzene obtained by successive replacement of CH groups by nitrogen atoms in benzene.

采用密度泛函理论的B3LYP方法在aug-cc-pvDZ基组上研究了13种苯及其含氮等电子体化合物的分子结构、能量和异构体相对稳定性，重点考察了含氮量对化合物含能性质的影响。

On the other hand,noble gas cations have greater electron affinities and greater ionization energies than do isoelectronic halogen atoms .

另一方面，惰性气体离子有更大的电子亲和更大的电离能比等电子卤素原子。

He obtained a complex product containing the ion +(with a valence structure 1 isoelectronic to dihalogen molecules) rather than the expected Xe+.

他获得一个复杂产品含有离子+（有价结构1等电子以dihalogen分子），而不是预计氙+。

The result showed a linear relation between accessibility of amino acids and the isoelectronic point of enzyme.

蛋白质的酸碱性质和它一级结构中所含的酸性氨基酸和碱性氨基酸的

However, the properties of isoelectronic impurity doped crystals have not been clearly understood, such as optical and electrical properties, mechanism for dislocation reduction, and so on; In addition, the effects of isoelectronic impurities on defects and lattice mismatch of heterostructures have not been given much attention.

然而对于等电子杂质在材料中的其它物理行为，等电子杂质降低位错的机理，以及等电子杂质对异质外延材料中缺陷和晶格失配的影响等问题研究得并不深入。

Secondly, the ground-state ionization potentials from Lithium-like to Neon-like isoelectronic sequences (Z: 37-82) are calculated systematically by using of MCDF method, and the effect and contribution of electron-correction energy and high-order correct are analyzed in detail, then their variational relations with Z are obtained, these shows that Breit interactions become important for the energy as the nuclear charge Z increases, but that of the QED only fluctuates around 0, then a new extrapolation formulae for IPS along an isoelectronic sequence is set up.

其次，用MCDF理论系统地研究和计算了中高Z元素Li-like到Ne-like等电子系列基态电离能(Z=37-82)，详细分析了电子相关能和高阶修正能量的影响和贡献，得到其等电子系列随Z的变化关系，结果表明Breit贡献随着Z的增加而迅速上升，而QED的贡献随Z的变化不大，仅仅在零上下波动，并建立了不同等电子系列电离能的新拟合公式。

On the bases of a solid solution hardening model, and considering the solubility of isoelectronic impurities in InP crystals and the elastic misfit arised from the differences of the tetrahedral radii between added impurities and host atoms, the pinning forces as large as 〓 have been obtained for isoelectronic impurities in InP.

以InP单晶中的等电子杂质为例，根据固溶强化模型，考虑了等电子杂质在InP单晶中的溶解度以及掺入杂质与基质原子之间共价半径之差引起的弹性失配，计算了这些杂质在InP中对位错的钉扎力可达10〓～10〓达因/厘米〓，从而很好地解释了等电子杂质降低位错密度的作用。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。