查询词典 ionizing
- 与 ionizing 相关的网络例句 [注:此内容来源于网络,仅供参考]
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Through the calculating of doping materials, we can see electrons are easy to transation or transfer, which strengthens the conduction properties of materials. Especially the stability of materials doping with Mn or Al is more strong, and the ionizing energy is more lower. These indicate that the electrons in the outest orbit are easier to lose, that is to say the Li+ ions are easier to imbed into materials. The discharge voltage of material doping with Co decreases, the oxidization of electrolyte is more difficult, and the cycling performance is improved.
通过对掺杂材料的计算可见掺杂后电子更容易跃迁或转移,增强了材料的导电性能,其中掺锰和掺铝的材料稳定性更强,电离能降低,说明失去最外层电子更容易,也就是说锂离子在材料中嵌入和脱出更加容易;掺钴之后材料的放电电压降低,电解液氧化的可能性减小,循环性能得到改善。
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The spontaneous disintegration of a radioactive substance along with the emission of ionizing radiation.
伴随有离子射线释放的一种放射性物质自发的瓦解过程。
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Couclusion low dose ionizing radiation can reverse radiogenic tumor multidrug resistance with high dose.
低剂量辐射可以逆转大剂量辐射所致的多药耐药性。
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Treatment of disease with radiation,especially by selective irradiation with x - rays or other ionizing radiation and by ingestion of radioisotope s.
放射疗法用放射进行的疾病治疗,尤指用X射线或其它电离辐射的有选择放射和吞下放射性同位素
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A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.
二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究,编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系,计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等,对评估MOS型集成电路电离损伤和加固方法研究,以及论文中开展的MOSFETs无损筛选方法研究奠定了基础;分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性,利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流,在不同栅氧厚度下随栅压的变化曲线,计算了热载流子效应造成的阈值电压漂移,研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想,具有重要的参考价值;开展了PN结和双极晶体管电离光电流研究,计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应,计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应,以及基区宽度对NPN晶体管光电流的影响,研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义;在国内首次开展了器件位移损伤的理论研究,分析了辐射产生的缺陷对电性能的影响,计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。
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Solar collectors for the selective absorption of high-coating the introduction of Germany technology into the market, this new type of titanium-based and quartz-blue coating, a one-time use of ionizing coating process, as opposed to the widespread use of The black chrome plating and black nickel coating, in terms of performance on an unparalleled advantage.
用于太阳能集热器的高选择性吸收体涂层引进德国技术进入市场,这种新型的基于钛基和石英的蓝色涂层,采用了一次性电离涂层工艺,相对于普遍使用的电镀黑铬和黑镍涂层来说,在性能上具有无可比拟的优势。
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With the development of Chinas nuclear power industry, the demand for the uranium ore resources will be increasing inevitably, also accompanied by a series of environmental problems of ionizing radiation.
随着我国核电事业的发展,势必造成铀矿资源的需求不断增加,同时还伴随有一系列环境电离辐射问题。
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Arc-glow plasma depositing technique is a new surface coating method. With the help of vacuum arc discharge, a cold cathode arc source continually emits ion beams of coating elements with high currency density and high ionizing ratio.Upon the ion bombard and diffusion work on, the surfaces of the parts form deposited layers, diffusion layers. In this study, a commercial magnesium alloy AZ91 was coated with Ti film layer.
加弧辉光离子渗镀技术将辉光放电与弧光放电有机地结合起来,利用辉光放电空心阴极效应使工件迅速升温,同时在真空容器壁上设置一个或多个金属阴极电弧靶源,利用真空电弧放电而不断地发射出高能量、高电流密度、高离化率的欲渗金属离子流,依靠扩散和离子轰击作用快速渗入工件表面层,在工件表面可以形成渗层、镀层、渗镀结合层。
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In order to implement the regulatory requirement on protection of environment,the ionizing radiation protection should be extended from human beings into the whole environmental ecosystem,in which,to establish a risk analysis system on non-human beings is the main content and the main chal- lenge.
为了真正落实法规中强调的保护环境的要求,现行辐射防护体系应该从单纯对人类的防护,拓展到对整个环境的电离辐射防护。
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Cytogenetic damage may be caused by the long-term exposure of low levels of antineoplastic drugs and ionizing radiation in the work environment.
对电离辐射的遗传损伤效应的研究一直受到人们的重视,而抗癌药物对环境的污染可能造成的损伤效应往往被人们忽视。
- 推荐网络例句
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This one mode pays close attention to network credence foundation of the businessman very much.
这一模式非常关注商人的网络信用基础。
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Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.
扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。
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There is no differences of cell proliferation vitality between labeled and unlabeled NSCs.
双标记神经干细胞的增殖、分化活力与未标记神经干细胞相比无改变。