查询词典 integrated semiconductor

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

该方法包括以下步骤：在硅衬底上形成可剥离树脂层；在所述可剥离树脂层上形成布线衬底；将半导体芯片安装在所述布线衬底上；通过用密封树脂密封所述多个半导体芯片来形成半导体器件；通过从密封树脂侧将这些半导体器件切分但是保留硅衬底来使这些半导体器件个体化；将每个个体化半导体器件在所述硅衬底和可剥离树脂层之间从硅衬底上剥离；并且通过形成穿过可剥离树脂层的孔或者通过除去可剥离树脂层来使布线衬底上的端子暴露。

Company and Beijing University Wide Bandgap Semiconductor Research Center, Sun Yat-sen University Semiconductor Research Center, set up lighting a long-term partnership to jointly develop semiconductor lighting system; the company's lead director is currently the country,"semiconductor lighting technical standards working group" members, Shenzhen Science and Technology Committee of Experts on senior evaluation experts, Shenzhen City, Illuminating Engineering Society of senior experts.

公司与北京大学宽禁带半导体研究中心，中山大学半导体照明研究中心建立了长期合作伙伴关系，共同研发半导体照明系统；公司的首席董事目前是国家"半导体照明技术标准工作组"成员、深圳市科技专家委员会的高级评审专家、深圳市照明学会的高级专家。

There is no obvious relation between temperature and semiconductor intrinsic properties. The passivation film represents the n-semiconductor characteristic in the potential interval of -0.5~0.1V, the p-semiconductor characteristic in the potential interval of 0.1~0.9V, and the n-semiconductor characteristic in the potential interval of

温度对于316L不锈钢钝化膜的半导体本征性质没有根本的影响：在-0.5~0.1V电位区间内钝化膜呈p型半导体特征；在0.1~0.9V电位区间内钝化膜呈n型半导体特征；在0.9~1.1V电位区间内钝化膜呈p型半导体特征。

According to Semiconductor Industry Association of United States,"semiconductor industry is the multiplicator to the US economy". On the one hand, semiconductor industry puts other industries to shame, while on the other hand it is a precondition to the development and prospers of other industries. SIA also points out that essentially, it is the semiconductor that stimulates the progress of electronic products.

美国半导体工业协会称"美国半导体工业是美国经济的倍增器"，并指出半导体是一种使其他所有工业黯然失色，又使其他工业得以繁荣发展的技术，半导体在本质上驱动着所有电子产品的进步。

LED is the core of the P-type semiconductor and components of the N-type semiconductor chips, the P-type semiconductor and N-type semiconductor between a transition layer, called the PN junction.

发光二极管的核心部分是由 P 型半导体和 N 型半导体组成的晶片，在 P 型半导体和 N 型半导体之间有一个过渡层，称为 P-N 结。

The vigorous development of the semiconductor market led the starting of its attached industrial. It included the advertisement profession of semiconductor magazine which this article needed to discuss studies. Along with the semiconductor profession magazine of overseas inrushes China, the domestic semiconductor media market competed fiercely.

半导体市场的蓬勃发展带动了其相关产业的兴起，随着国外半导体行业杂志涌入中国，国内的半导体媒体市场竞争异常激烈，杂志广告业务面临着很大的挑战和机遇。

The cutoff value of E2/E6, used to distinguish the pure episomal form from a mixed form of episomal and integrated HPV16 DNA, was 0.81 in the multiplex real-time PCR test. c） HPV16 existed as episomes in most of the CIN Ⅰ lesions, and 42.9% of them had mixed episomal/integrated HPV16. The integrated form of HPV16 constituted the majority in most of the CIN Ⅱand CIN Ⅲ cases. In squamous cervical carcinomas, the HPV16 was mostly integrated into the host chromosome. d） The rate of HPV16 integration was associated with the degree of cervical lesions and the rate increased with the progression of cervical disease, e） The rate of pure integrated HPV16 in stage Ⅱ and Ⅲ（88%） was higher than that in stage Ⅰ（33.3%）. Conclusions: a） Multiplex real-time PCR is a rapid and sensitive method for detection of the integration state of HPV16 DNA. b） The integration of HPV16 DNA is a very early event in the development of cervical cancer and may act as an activation mechanism for progression from preinvasive to invasive cervical cancer, c） The pure integrated HPV16 in cervical cancer may be a useful prognostic indicator.

HPV—16E2、E6标准曲线相关系数均为1.00，扩增效率均在95％以上：2）确定0，81作为多重实时PCR区分游离型和混合型HPV-16的界值、3）CINⅠ中HPV—16大多以游离方式存在，但仍有整合的发生（42，9％）；CINⅡ和CINⅢ中HPV—16以混合型为主：浸润癌中以整合型HPV—16为主。4）HPV-16整合发生率与不同程度的宫颈病变有关，并且随着宫颈病变级别的升高HPV-16整合发生率呈上升趋势-5）Ⅱ＋Ⅲ期宫颈癌中整合型HPV—16所占比例显著高于Ⅰ期宫颈癌结论：1）多重实时定量PCR是一种敏感性高、简便快速的HPV—16病毒存在状态的检测方法2）HPV-16整合是宫颈癌变的早期事件，与宫颈癌前病变的进展有关。3）宫颈癌中整合型HPV—16的发生可能具有预后价值

For those who were born in the late 1970s, electronic devices were something exciting and inspiring back then. In the integrated installation "Goodbye Semiconductor", there are dozens of semiconductor radiogram, television, electronic organ, and synthesizer. They are all Peng Lei's personal collection. He enjoys the simple carnival feeling and the sense of security embedded in the design style. These products made in a transitional period are displaced on the floor of a separate room. When all these devices were turned on, the noises from the old days mixed up together and integrated into an "individual happiness", while the revolving color light and mirror-like wall created a chaotic visual effect for the noises.

对于出生于70年代末的人而言，电器机械在当时是让人兴奋和充满想象力的物质，在综合装置作品"再见半导体"中，十几件八十年代出产的半导体收音机、电视、电子琴、合成器都是彭磊的收藏，他喜欢它们简朴的狂欢气息和设计形式下的安全感；这些过渡时期的产品摆放在一个独立的小屋地上，当它们同时打开，来自旧时代的混音彼此嘈杂着组合而成了一件"私人乐事"，彩色旋转灯球和镜反射般的墙面增加了声场的视觉混乱效果。

SBD is the use of metal and semiconductor contact with the formation of metal - semiconductor barrier made of, so it is a thermal emission diode, with the manufacturing process of continuous improvement and the emergence of special materials, Schottky barrier gate and high-speed FET Large-scale integrated circuit and ultra-large-scale integrated circuits wide field of applications, Schottky diodes on the application of more and more widely.

SBD是利用金属与半导体接触形成的金属-半导体势垒制成的，因此，它是一种热电子发射二极管，随着制造工艺的不断完善及特殊材料的出现，肖特基势垒栅FET及其高速大规模集成电路和超大规模集成电路领域的广泛应用，肖特基二极管的应用范围也越来越广。

A carrier gas such as nitrogen is directed through line 20 and valve 22 to connect with line 26 and mix with the gas sample.

如氮气之类的载体通过管线20和阀22引入，与管线26相通，与气体样品混合。

But for the most part, knaves and parasites had the command of his fortune

然而支配他的家产的大多是恶棍和寄生虫。