查询词典 insulator

As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

接着我们把掺氮ZnO薄膜作为沟道层材料，用Si3N4做栅绝缘层在非晶玻璃上制备了ZnO基薄膜晶体管，ZnO-TFT器件表现出了典型的场效应晶体管的输出特性。

In such a semiconductor device, the diffusion layer of the first conductivity type is formed so as to be separated from the gate insulator film.

在这样的半导体器件中，一导电型的扩散层与栅绝缘膜分开形成。

In this thesis, the low-temperature (25℃-250℃) sputtered aluminum nitride film was deposited as the gate insulator in organic thin film transistors.

本论文中，低温(25℃-250℃)溅镀氮化铝薄膜被沉积当作有机薄膜电晶体上的闸极绝缘层。

The motive of this paper is to investigate the relationship between deposition parameters and its properties in order to prepare excellent silicon nitride silicon thin film for gate insulator of TFT.

本实验通过系统地改变沉积参数，在经过清洗好的单晶硅片上沉积了一系列的氮化硅薄膜。

The work done previously is experiential. To this day, the researches on silicon nitride thin film prepared by PECVD stay initial stages, so it is necessary to further develop PECVD. On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

前人做的工作大多也都是经验性的，至今人们对PECVD 氮化硅薄膜的研究还很不成熟，尚处于研究探索的阶段，从而在理论上有必要对PECVD 法氮化硅薄膜做进一步的研究；与此同时，制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管这一课题的需要。

Research and development of the surface flashover of ceramic insulator in vacuum.

真空中陶瓷绝缘子的沿面闪络现象及其研究进展。

Influence of insulator installation from on its pollution flashover voltage.

绝缘子安装结构对污闪电压的影响。

Scanning Tunneling Microscope/Scanning Force Microscope with atomic resolution were used to observe and measure the feature and the size of the damage in conductor and insulator, and also the relationship with the energy deposition of incident ions in solids.

分别利用具有原子分辨能力的扫描隧道显微镜/扫描力显微镜观测了离子轰击导电和绝缘材料产生孤立损伤的形态、大小。

The proper series gaps are determined. The voltage distribution of arrester with series gap supported by insulator is completed. The key part of the arrester electrical field distribution is presented.

为了进一步保证避雷器运行的稳定性和可靠性，论文还对带绝缘支撑件间隙避雷器的电场分布进行了模拟计算，以校核关键部位的电位和电场分布。

This article illustrates by the specific examples that the integral formula of Gauss s law when having insulator is a macrocosm formula under a certain condition and it can t explain microcosm .

该文通过具体例子说明了有介质时的高斯定理的积分形式是在一定条件下的宏观表达式，它不能解释微观现

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。