查询词典 insulating layer

The drop of water is placed to the base layer from the metal, covered with the thin insulating layer.

该一滴水是放在向基地层从金属，涵盖了与薄绝缘层。

The results of the test show that the whole intensity and comprehensive stability of subgrade made a good progress because the capillary water cant rise by using the insulating layer. In the prior condition of taking insulating layer thickness as 0.2m, choosing insulating layer 0.5m, 0.8m, below the pavement, the stability of seasonal frozen soil subgrade is analyzed. The results of the test also show that the optimal position of the insulating layer is 1.0m～1.5m .

试验表明，由于隔离层的作用使得毛细水无法迁移，对路基整体的强度和综合稳定性都有了很大程度上的提高，同时试验还表明在隔离层厚度为0.2m的前提下，设置在距路面以下1.0m～1.5m位置，即路基表面以下0.5m～0.8m处对路基的稳定性最为有利。

The method includes the following steps: a semiconductor basal body is provided and the insulating layer of the semiconductor basal body is plated with light-sensitive lacquer and then is exposed in light and at last is developed; etching process is carried out to make a through hole on the insulating layer; cineration process is done, the remanent light-sensitive lacquer is removed and the temperature for the cineration process is 20-50 DEG C; wet cleaning process is carried out.

该制造方法包括如下步骤：提供半导体基体，对半导体基体的绝缘层进行镀光刻胶步骤、曝光步骤、显影步骤；进行蚀刻步骤，在绝缘层上形成通孔；进行灰化步骤，将剩余的光刻胶移除，且灰化步骤的温度条件范围是20-50摄氏度；进行湿法清洗步骤。

Mass-spectrum scan is conducted for the remaining gas in insulating layer. It is discovered that, the steam, CO_2 and hydrocarbon are main factors affecting the vacuum degree of the layer. Degasification process shall be applied to remove the remaining gas and to extend the service life.

通过室内实验，对隔热夹层中的残气进行了质谱扫描，发现水蒸汽、CO2 和碳氢化合物是"污染"夹层真空度的主要因素，可应用除气工艺消除隔热夹层中的残气，以延长高真空隔热油管的使用寿命。

In a comprehensive study of various macro-and micro-heterogeneous reservoir parameters on the basis of the reservoir quality, we launched a comprehensive evaluation to determine the evaluation criteria. The reservoir quality in 2+3 was divided into three types. The research shows that distribution of interlay and insulating layer is controlled by sedimentary microfacies. The developmental stages and the size of the sedimentary microfacies determine the plane and the vertical distribution of interlay and insulating layer.

本研究运用高分辨率层序地层学的原理和方法，从油田生产的实际需要开发，将双河油田Ⅶ下单元的14个小层，重新划分为31个；在综合研究各种储层宏观和微观非均质性参数对储层质量影响的基础上，开展了储层多参数综合评价，对Ⅶ下单元的隔夹层进行研究，绘制了各小层的平面分布图，并对Ⅶ下单元的31个活动单元划分为4种类型，在平面上画出了所有小层的评价图。

The invention has the technical scheme that SIMOX or SIMNI technology in SOI process is locally used for perpendicular conducting power devices, while in conventional power JFET manufacture process, the buried local insulating layer is formed by insulating barrier layer growing, gate area doping window etching, ion injection and high temperature annealing.

其技术方案是：将SOI工艺中的SIMOX或SIMNI技术思路以局域化的方式用于纵向导电的功率器件，在制造功率JFET的常规工艺流程中，通过安排绝缘阻挡层生长、栅极区掺杂窗口刻蚀、离子注入和高温退火等四个工艺步骤，来实现隐埋局域绝缘层。

The thin film transistor may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer.

本发明公开了一种薄膜晶体管及其制造方法，该薄膜晶体管可以包括沟道层、源电极、漏电极、保护层、栅电极、和/或栅极绝缘层。

The gate insulating layer may be interposed between the gate electrode and the channel layer.

栅极绝缘层可以夹置在栅电极和沟道层之间。

The thin film transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer.

具体而言，薄膜晶体管可以包括：栅绝缘层；形成在栅绝缘层上的栅电极；形成在栅绝缘层上的沟道层；以及接触沟道层的源和漏电极。

In EEPROM chips, the insulating layer is only around 1 nanometre thick whereas in EPROM chips, the oxide layer is around 3 nanometres thick.

在eeprom中的筹码，在保温层上，则只有一纳米厚，而在eprom的芯片中，氧化层，是约3毫微米厚。

The absorption and distribution of chromium were studied in ryeusing nutrient culture technique and pot experiment.

采用不同浓度K2CrO4(0，0.4，0.8和1.2 mmol/L)的Hoagland营养液处理黑麦幼苗，测定铬在黑麦体内的亚细胞分布、铬化学形态及不同部位的积累。

By analyzing theory foundation of mathematical morphology in the digital image processing, researching morphology arithmetic of the binary Image, discussing two basic forms for the least structure element: dilation and erosion.

通过分析数学形态学在图像中的理论基础，研究二值图像的形态分析算法，探讨最小结构元素的两种基本形态：膨胀和腐蚀；分析了数学形态学复杂算法的基本原理，把数学形态学的部分并行处理理念引入到家实际应用中。