查询词典 instantaneous voltage

The invention relates to an amplifier circuit containing a high-frequency transistor (1) and having a circuit (2) for adjusting the operating point, which provides a base current for the high-frequency transistor (1) according to the voltage released at a resistor (3) which is connected in the collector ring of the high-frequency transistor (1). The circuit (2) has a differentiating unit (20), fed by the supply voltage, which compares the voltage released at the resistor (3) with a reference voltage.

带有高频晶体管(1)的放大器电路具有一个用于工作点调整的电路(2)，其依赖于在连接在高频晶体管(1)的集电极电路中的电阻(3)上下降的电压为高频晶体管(1)提供基极电流，电路(2)具有一个由供电电压馈电的差分节(20)，其把在电阻(3)上下降的电压与基准电压比较。

The light source detecter makes used of the variation of the separated voltage by the resistivity of photosensitive resistance input to the singlechip. If the voltage higher than a worth, the singlechip will regard it as high voltage state, it means that the light source has been detected. Otherwise the low voltage state means the light source has not been detected.

光源探测是利用光敏电阻阻值分压的变化向单片机输入，电压大于某值时，单片机认为是高电平，即表示该路探测器感应到光源，否则为低电平，即表示探测器没有感应到光源，如此即可由两路信号判断光源的方向。

Protection schemes based on the zero sequence fundamental voltage and the third harmonic voltage and the injection voltage are presented in this paper, and based on which, the factors which affects the protection schemes based on the zero sequence fundamental voltage and the relevant measures is presented.

本文在对基波零序电压型定子接地保护、三次谐波电压型定子接地保护和外加电源式定子接地保护各种方案的构成原理及其优缺点进行分析的基础上，详细分析了影响基波零序电压型定子接地保护的各种因素，并提出了相应措施。

Maintain deflector if the size of the same voltage, the voltage change is accelerating, we can see a very accelerated voltage reduce, electron beam deflection angle instead of increasing, it is because of low accelerating voltage, the electron velocity smaller horizontal direction, electronic deflection plates in the field of the role of the extended time, the angle of deflection increases .

如果保持偏转板的电压大小不变，改变加速极的电压，可以看到加速极的电压减小，则电子束偏转的角度反而增大，这是因为加速极电压低，则电子的水平方向速度变小，电子在偏转板中受电场力作用的时间加长，所以偏转的角度增大。

As a DC/DC basic structure is adopted, the operational amplifier leads the non inverting input end voltage of the error amplifier to follow the input voltage linearly, thus realizing the linear following relation between the output voltage and the input voltage.

由于采用DC/DC的基础结构，增加运算放大器使误差放大器的同相输入端电压与输入电压线性跟随，从而实现输出电压与输入电压的线性跟随关系。

Main features:- Hole spacing 2.25mm-operating voltage: 4.5 V to 24 V-switching offset compensation at 62Hz under - over-voltage Protection - VDD-pin Reverse voltage protection - Short circuit protection open-drain output is hot off - working magnetic field range: DC to 10kHz-output goes low with magnetic south pole contacts marked on the package side, while the higher magnetic flux density and area of S1, As S2-all temperature and supply voltage range magnetic parameters on-chip temperature compensation circuitry of the minimum drift - EMC meet DIN40839.

主要特点：–霍尔片间距2.25mm–工作电压： 4.5 V 至 24 V–开关偏移补偿在62Hz下–过电压保护– VDD-pin反向电压保护–短路保护漏极开路输出被热关断–工作磁场范围：直流到10kHz–输出变低用磁场南极接触封装上有标记边，而更高磁通量密度面积S1，如同S2–全温度和供电电压范围下磁参数的片上温度补偿电路的最小漂移– EMC适应DIN40839。

In the proposed device to remedy the defect that overhigh withstand voltage of thyristors used in converter are needed due to the overhigh DC link voltage, a method to control DC link voltage is put forward, that is, a special control logic for full-controllable switching elements is designed to make them equivalent to half-controllable switching elements which are naturally turned on and turned off by triggering, then connecting such a half-controllable switching element in series with DC link the defect of overhigh DC link voltage is effectively solved.

为了克服该装置直流母线电压过高，因而对逆变器开关管耐压要求过高的缺点，提出一种对直流母线电压进行控制的方法。对全控型开关器件设计一种特殊的控制逻辑，使其等效为一个自然导通、触发关断的半控型开关器件，将该半控型开关串联在直流母线上，有效解决了直流母线电压过高的问题。

First of all the differences between photoelectric current / voltage transformer elements in HV and UHV switchgear assembly and independent electric device of conventional open porcelain knob photoelectric current / voltage transformer are described in this paper,then the photoelectric current / voltage transformer elements in HV and UHV switchgear assembly are classified,and the working principle and technical performances of photoelectric current / voltage transformer elements in 500 kV switchgear assembly abroad are introduced in detail.

首先论述了高压和超高压组合电器中光电式电流/电压互感器元件和常规敞开瓷柱式光电电流/电压互感器独立电气设备在概念上的区别，然后对组合电器中光电式电流/电压互感器元件进行了分类。并详细介绍了国外550kV 超高压组合电器中光电式电流/电压互感器元件的工作原理及技术特性。对 ABB 公司、阿尔斯通公司、三菱公司、西门子公司等生产的245～550kV 户外超高压新型组合电器进行了较详尽地介绍和分析，主要是：①基本结构及特点；②主要技术参数

Maximum expected voltage unbalance at PCC during normal operation of the grid: Voltage unbalance defined as relative value of negative phase voltage component, expressed in percentage of positive voltage component.

电网正常运行电网接入点预计的最大电压不对称：不对称电压的定义为负相电压分量的相对值，用正电压分量的百分数来表示。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Putt your way through 36 fun-filled holes of minigolf on 3D designed courses with elevated greens, bunkers, bridges and water hazards, among other crazy obstacles.

您的推杆方式，通过36个有趣的填孔迷你的三维设计的课程，以提升绿党，掩体，桥梁和水的危害，除其他疯狂的障碍。

Some participles can be used either as attributes or as predicatives.

有些分词既可当定语用，也可当表语用。