查询词典 induced voltage

The voltage induced in the terms of the armature winding is alternating.

在电枢绕组的各条边所感应的电压是交变的。

The test results indicate that,because of the capacitive coupling between500kV high voltage line and400V power-supply line,high voltage was induced on the power-supply line during the isolator operation.

试验结果表明，开关操作时由于500kV串内连接线和400V电源线间存在电容耦合，在操作电源供电母线上有较高的感应电压存在。

By using freshly isolated SD rat cerebrocortical synaptosomes and KC1 as chemical stimulant to depolarize, we studied the effects of etomidate on KCl-induced increased intrasynaptosomal calcium concentrations, voltage-gated calcium channel subtypes on presynaptic membrane and neurotransmitters release from synaptosomes respectively, via neurochemical and inverse phase high performance liquid chromatographic methods.

我们利用SD大鼠新鲜分离的大脑皮层突触体作为研究对象，以KCl作为化学刺激剂去极化，采用神经化学方法(Fura-2作为钙离子指示剂)和高效液相测定法，分别就依托咪酯对去极化诱发突触体内钙离子浓度升高的影响，突触体膜上电压门控性钙通道亚型的作用以及由此引起的对神经递质释放的影响进行了实验研究。

This effectively translates the output voltage measurements by 1.5V, so a zero input differential voltage will output 1.5V ±V OS -induced errors.

这有效地转换了1.5V的输出电压测量，所以零输入差分电压输出1.5V的±的 V OS引起的误差。

The withstand voltage of a single grain was induced to indicate the withstand voltage properties of grain boundary.

本文建立了PTCR 材料的晶界、晶粒微观模型，采用单晶粒的耐压强度表征PTCR 材料的耐压性能。

These methods usually find use only in low-voltage systems; they do not address high-voltage-induced noise.

这些方法通常只在低压系统中使用；不能用于系统引起的噪声。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Our experimental results shown that threshold voltage related hot only with the number of hecical turns ,hut a boundary-induced contraction or dilatation of the pitch also has a strong influence on it, at each regin, belong to a fixed n,the threshold voltage increases as the contraction of the pitch and the thieshold volage decreases as the dilatation of the pitch.

实验结果表明：阀值电压不仅与螺距数有关，而且与边界条件引起的螺距收缩和伸展有关，在螺距数不变的情况下，螺距的收缩使阀值电压提高，而螺距的伸展使阀值电压减小。

The instrumentation can play in important role in dealing with RMS value of the induced voltage of the coil in the saturab le reactor.

介绍一种研究可控饱和电抗器输出特性的单片机测试仪，用于检测并处理可控饱和电抗器中的感应线圈电压波形的平均值、有效值。

Several methods, such as the capacitance network balance method, the induced voltage method, the series-wound resistance method and the series-wound capacitance method, were proposed, designed, simulated and tested.

主要对电容网络平衡电路法、感应电动势法、串联电阻法、串联电容法等方法进行了理论分析、设计、模拟和实测。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。