查询词典 induced current

The sharp rising process of the reflectivity was explained quantitatively well based on the model of Auger recombination of high density plasma and Auger-recombination-induced heating to lattice, which showed the heating effect induced by Auger recombination in high density plasma should be the main mechanism of ultra-short laser pulse-induced phase change.

利用高密度等离子体的Auger复合及其感应的晶格加热模型较好地定量解释了反射率从最小到最大的快速变化过程，表明高密度等离子体的Auger复合加热导致的热效应可能是超快激光诱导相变发生的主要机制。

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

Not only the transmission line current but also aerial current is considered in the calculation of induced current.

在计算外皮感应电流时，既考虑了传输线模式电流，也考虑了天线电流。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

The electron beam current measured by the beam current monitor (BCT3) is almost in direct proportion to the induced voltage of the fundamental harmonic. When the parameters of the pre-buncher and buncher are adjusted greatly while the beam current being unchanged, the fifth harmonic signal has a great change, but the fundamental signal changes gently. The test results are all in good agreement with the theoretic analysis.

根据不同时刻的记录，基频腔峰值电压与束流流强探测器BCT3所测流强值近似成正比关系；当大幅改变预聚束器和聚束器参数而束流流强不变时，反映聚束质量的五倍频腔信号也随之大幅改变，而反映流强信号的基频腔信号则变化不大，这些试验结果与理论分析完全一致。

The measured bunch length ranging between 1.4 mm and 2.0 mm agrees well with the theoretic calculation of 1.5 mm.The electron beam current measured by the beam current monitor(BCT3) is almost in direct proportion to the induced voltage of the fundamental harmonic.When the parameters of the pre-buncher and buncher are adjusted greatly while the beam current ...

根据不同时刻的记录，基频腔峰值电压与束流流强探测器BCT3所测流强值近似成正比关系；当大幅改变预聚束器和聚束器参数而束流流强不变时，反映聚束质量的五倍频腔信号也随之大幅改变，而反映流强信号的基频腔信号则变化不大，这些试验结果与理论分析完全一致。

The electron beam current measured by the beam current monitor(BCT3) is almost in direct proportion to the induced voltage of the fundamental harmonic.When the parameters of the pre-buncher and buncher are adjusted greatly while the beam current being unchanged,the fifth harmonic signal has a great change,but the fundamental signal changes gently.

根据不同时刻的记录，基频腔峰值电压与束流流强探测器BCT3所测流强值近似成正比关系；当大幅改变预聚束器和聚束器参数而束流流强不变时，反映聚束质量的五倍频腔信号也随之大幅改变，而反映流强信号的基频腔信号则变化不大，这些试验结果与理论分析完全一致。

After take analyzed deeply for the opened magnet circuit with FEMM (Finite Element Method Magnetics) we find out the field distributing that is separated into three sections . One is the main area what we called as positive field section. Beside the main field there are tow areas that are called the inverted field sections. Loudspeaker arise a very serious distortion when the voice coil moving into inverted field areas. The direction of induced current in the coil part of entered inverted field area is same with the current driving into loudspeaker so that total currents increas largely and heat increase rapidly. With more coils moving into inverted area the voice coil will take on negative inductance properties. It is the main reason that voice coil is burned by heating with increasing current due to arise negative inductance. So opened magnetic circuit is not suitable for the woofers in which the voice coil have wider displacement range. When using this kind magnetic circuit design, the voice coil moving range should be less than the range of positive field to avoid loudspeaker arise serious distortion and heating. Even though voice coil moving range is in the positive area, loudspeaker will still arise more distortion because the field distribution is very cliffy at tow sides of the positive area and full range of magnetic field distribution is not parallel that will arise distortion. Base on above reasons, opened magnetic circuit is not an ideal magnetic circuit for low-frequency loudspeakers. But it can be used in mid-range or high-frequency productions.

开式磁路是由2片钕铁硼磁铁和主导磁板和导磁垫片组成，我们在实践过程中发现这种磁路结构不适合于低频扬声器的使用，我们通过使用FEMM（Finite Element Method Magnetics）软件包对该磁路进行了分析，该磁路的磁场范围被分成3个区域，其中在主导磁板附近形成一个正向磁场，在正向磁场的两边存在反向的磁场，音圈在工作时有很大一部分进入了反向磁场中，在反向磁场内线圈的感应电流方向与驱动电流方向相同，使得音圈呈现出负感抗特性，由于音圈的负感抗特性引起电流的增加导致音圈发热甚至烧毁，因此在扬声器中使用开式磁路时，音圈的运动范围应控制在正向磁场范围之内，否则音圈运动到反向磁场区域时将会产生很大的失真和发热，即使在设计时已经将音圈的运动范围控制在正向磁场范围之内，由于正向磁场的2个边缘磁场强度衰减太快，同时开式磁路中磁场的分布不是平行的，而是自由发散的分布，这样肯定会导致扬声器的非线性失真，因此我们得到的结论是：开式磁路并不是一个理想的磁路，它不适合于低频扬声器的使用，但它还可以应用于中高频扬声器。

The opened magnetic circuit is composed as tow NdFeB permanent magnets and a top plate without U-yoke. After take analyzed deeply for the opened magnet circuit with FEMM (Finite Element Method Magnetics) we find out the field distributing that is separated into three sections . One is the main area what we called as positive field section. Beside the main field there are tow areas that are called the inverted field sections. Loudspeaker arise a very serious distortion when the voice coil moving into inverted field areas. The direction of induced current in the coil part of entered inverted field area is same with the current driving into loudspeaker so that total currents increas largely and heat increase rapidly. With more coils moving into inverted area the voice coil will take on negative inductance properties. It is the main reason that voice coil is burned by heating with increasing current due to arise negative inductance. So opened magnetic circuit is not suitable for the woofers in which the voice coil have wider displacement range. When using this kind magnetic circuit design, the voice coil moving range should be less than the range of positive field to avoid loudspeaker arise serious distortion and heating. Even though voice coil moving range is in the positive area, loudspeaker will still arise more distortion because the field distribution is very cliffy at tow sides of the positive area and full range of magnetic field distribution is not parallel that will arise distortion. Base on above reasons, opened magnetic circuit is not an ideal magnetic circuit for low-frequency loudspeakers. But it can be used in mid-range or high-frequency productions.

开式磁路是由2片钕铁硼磁铁和主导磁板和导磁垫片组成，我们在实践过程中发现这种磁路结构不适合于低频扬声器的使用，我们通过使用FEMM（Finite Element Method Magnetics）软件包对该磁路进行了分析，该磁路的磁场范围被分成3个区域，其中在主导磁板附近形成一个正向磁场，在正向磁场的两边存在反向的磁场，音圈在工作时有很大一部分进入了反向磁场中，在反向磁场内线圈的感应电流方向与驱动电流方向相同，使得音圈呈现出负感抗特性，由于音圈的负感抗特性引起电流的增加导致音圈发热甚至烧毁，因此在扬声器中使用开式磁路时，音圈的运动范围应控制在正向磁场范围之内，否则音圈运动到反向磁场区域时将会产生很大的失真和发热，即使在设计时已经将音圈的运动范围控制在正向磁场范围之内，由于正向磁场的2个边缘磁场强度衰减太快，同时开式磁路中磁场的分布不是平行的，而是自由发散的分布，这样肯定会导致扬声器的非线性失真，因此我们得到的结论是：开式磁路并不是一个理想的磁路，它不适合于低频扬声器的使用，但它还可以应用于中高频扬声器。

Propofol induced Cl- currents at concentrations of 10-5 and10-4 M, which were sensitive to picrotoxin and, to a lesserextent, to strychnine. Propofol (10-6 M) enhanced -aminobutyricacidA (GABAA; 10-6 M)-induced current synergistically. Moreover,propofol (10-5 and 10-4 M) significantly increased the decaytime of evoked-inhibitory postsynaptic currents, which suggestsa postsynaptic modulation of GABAA receptors.

异丙酚在浓度10-5~10-4M 时，産生 Cl-电流，对印防己毒素敏感，在更小浓度范围内，对番木鼈碱敏感。10-6M 的异丙酚加强 GABAA 産生的电流，另外，异丙酚（10-5、10-4M ）显著地增加了突触后诱发-抑制电流的衰退时间，提示了 GABAA 受体的突触后调节作用。

Article 144 The Government of the Hong Kong Special Administrative Region shall maintain the policy previously practised in Hong Kong in respect of subventions for non-governmental organizations in fields such as education, medicine and health, culture, art, recreation, sports, social welfare and social

第一百四十四条香港特别行政区政府保持原在香港实行的对教育、医疗卫生、文化、艺术、康乐、体育、社会福利、社会工作等方面的民间团体机构的资助政策。原在香港各资助机构任职的人员均可根据原有制度继续受聘。

Small wonder, then, that the Chinese spend more in the shop than any other group of foreign visitors do .

这样的小惊喜，使中国顾客比任何国家的人消费得更多。