查询词典 in memory of

I bought it with a new 128MB memory replaced the original 64MB memory, but still black screen, 128MB memory This is not a problem.

我用新买的128MB内存将原64MB内存换下，但还是黑屏，这说明并不是128MB内存的问题。

In this paper a hierarchical optimized memory method, which combines the SAS scheduling sequence with Non-SAS scheduling sequence, is proposed to solve the optimized memory problem. In the method, data dense sub graph and strongly connected sub graph are defined for data dense structures and loops, and by the principle of consuming tokens first, a Non-SAS heuristic algorithm is designed for optimized memory of these sub graphs.

文中提出了将SAS和Non-SAS类型调度算法相结合的层次化的存储优化方法，定义了数据密集分量和强连通分量来描述环和数据密集处理结构，并依据数据优先消耗原则设计了启发式的Non-SAS调度算法对分量进行存储优化。

Each relevant company will has a memory barrel in memory and the distributing result of rude trade data will store in the corresponding memory barrel. When the barrel is full, all the data will be written into the database. Each function module will be realized by one subprocess.

该模型为每一家参与清分的运营公司在内存中开辟一个内存桶，把每一笔原始交易数据的清分结果数据先存放到对应公司的内存桶中，在达到指定数量之后一次性写入数据表。

In a connector used for recording and reproducing apparatus of a memory card, it is aimed to prevent an instantaneous make break phenomenon, in which a contact portion of a contact and a terminal of a memory card is instantaneously opened and suppliance of electric power to the memory card is instantaneously stopped when an impact is applied to the connector, and a deformation of the contact due to the impact.

一种用在记忆卡记录和复制装置中的连接器，其目的是避免闭合瞬间断开现象。在该闭合瞬间断开现象中，当连接器受到冲击，以致于该冲击造成触点变形时，触点的接触部分和记忆卡的端子瞬时断开，对记忆卡电能的供应瞬时中断。

For Proust,only the involuntary memory can open the gate of the time.Time lies in this kind of emotional memory,and only synesthesia can trigger the involuntary memory.

在普鲁斯特这里，只有无意的回忆才能真正打开时间的大门，时间的本质就在于这样的感性回忆之中，触发无意的回忆则需要通感。

To change Windows virtual memory parameters , in Windows Control Panel, double-click the System icon, click the Performance tab, click Virtual Memory, and then click Let Me Specify My Own Virtual Memory Settings.

若要更改 Windows 的虚拟内存设置，在 Windows"控制面板"中，双击"系统"图标，单击"性能"选项卡，单击"虚拟内存"，单击"用户自己指定虚拟内存设置"。

Secondly, according to the theory of retrieving model using time series and the self-memorization principle, the grey self-memory model based on grey system theory and phase space self-memory model established using chaotic theory are put forward, and the two kinds of models are applied to the analogy and forecasting of hydrologic time series, and the application field of the self-memory model is further expanded from extent and profundity.

更进一步，根据时间序列反演建模基本理论和系统自记忆性基本原理，提出了基于灰色系统理论的灰色自记忆预报模型和基于混沌理论的相空间自记忆预报模型，并应用于水文时间序列的模拟与预测，从广度和深度上更加拓广了自记忆模型的应用范围。

C Supports both Firmware Hub and LPC Memory Read and Write Cycles Auto-detection of FWH and LPC Memory Cycles C Can Be Used as FWH for Intel 8xx, E7xxx, and E8xxx Series Chipsets C Can Be Used as LPC Flash for Non-Intel Chipsets Flexible, Optimized Sectoring for BIOS Applications C 16-Kbyte Top Boot Sector, Two 8-Kbyte Sectors, One 32-Kbyte Sector, Three 64-Kbyte Sectors C Or Memory Array Can Be Divided Into Four Uniform 64-Kbyte Sectors for Erasing Two Configurable Interfaces C FWH/LPC Interface for In-System Operation C Address/Address Multiplexed Interface for Programming during Manufacturing FWH/LPC Interface C Operates with the 33 MHz PCI Bus Clock C 5-signal Communication Interface Supporting Byte Reads and Writes C Two Hardware Write Protect Pins: TBL for Top Boot Sector and WP for All Other Sectors C Five General-purpose Input Pins for System Design Flexibility C Identification Pins for Multiple Device Selection C Sector Locking Registers for Individual Sector Read and Write Protection A/A Mux Interface C 11-pin Multiplexed Address and 8-pin Data Interface C Facilitates Fast In-System or Out-of-System Programming Single Voltage Operation C 3.0V to 3.6V Supply Voltage for Read and Write Operations Industry-Standard Package Options C 32-lead PLCC C 40-lead TSOP

0第0页，本页显示记录0-0，共0条记录分0页显示C支持两种固件中心和LPC内存读取和写入周期自动的FWH和LPC的记忆圈C检测可以用于英特尔8xx系列，E7xxx，E8xxx系列芯片组和C可以用作FWH与至于非英特尔芯片组的BIOS应用柔性优化扇区开放16字节热门引导扇区，两个8 - Kbyte的，一个32字节部门，3个64 - Kbyte的C或存储阵列，线性预测编码闪光可分为四个统一为两个可配置的接口擦除的FWH / LPC接口为64 - Kbyte的行业，系统运行C地址/地址多路复用在制造过程中用于编程接口的FWH /线性预测编码界面C与33 MHz的PCI总线时钟 5信号通信接口进行操作，支持字节读取和写入引导扇区的顶部和WP C两硬件写保护引脚：任务型为所有其他部门 5个通用输入的系统设计的灵活性识别的多种设备选型部门登记销锁定为个别部门读取和写保护的A /阿复用界面C 11引脚复用引脚地址和8引脚的数据界面C促进快速系统内或外的系统编程的单电压3.0V至3.6V的操作供应的读取和写入操作业界标准的封装选项电压 32 -引脚PLCC 40引脚的TSOP

When using memory pattern recorded,the memory average is about 30% of total router memory space.

当采用内存方式记录时，索引位置信息的内存平均约占总路由容量内存空间的3％。

However, if you enable both UMB and EMS memory, then the total available UMB memory will be reduced by 64KB, so it's not recommended to enable EMS memory unless it's required.

然而，如果你激活UMB 和EMS内存，那么全部可用的UMB 内存将减少到64KB左右，因此除非必要，不允许激活EMS内存。

" I' d like to get some rough idea about music in the baroque ear, please."

请简要介绍一下巴罗克时期的音乐，好吗？

The results showed that the peak latency and pattern of SEPs elicited by electrical needling in LI-l1 and MP were similar. The amplitude of SEPs elicited by electrical needling in LI-l1 was higher than that of MP. There was no obvious SEPs generation when MM was electrical needling.

结果显示，电针刺激曲池穴和其邻近桡侧伸腕长肌运动点诱发性脑电波的波形和波峰时间是类似的，只是穴位的诱发性脑电波波幅较大，而电针刺激非穴位点并没有明显的诱发性脑电位。