查询词典 hydrogen arsenide

The InP process technology also has superior material properties compared with Agilent\'s prior-generation gallium arsenide process.

比起安捷伦前一代的砷化镓制程，InP制程技术拥有更佳的材料特性。

Computer simulation for the metal, silicon dioxide, gallium arsenide by the different thickness of surface plasma waves generated by analysis and comparison done by analysis of surface plasma waves to find the best angle and resonance absorption.

电脑模拟时针对金属、二氧化矽、砷化镓在不同厚度时所产生的表面电浆波做分析与比较，藉由分析表面电浆波找出共振角与最佳的吸收度。

Because the positron annihilation spectroscopy can directly show the information of the defects in the materials, we have measured the positron life of the gallium arsenide samples of different surface roughness. And we have discussed the effect of the surface topography on the positron life.

因为正电子湮没谱测量能直接给出缺陷的信息，我们用正电子寿命谱测量不同表面粗糙度的GaAs样品，讨论了表面形貌对常规正电子寿命测量结果的影响。

Because of the rapid development of the wireless communication technology, the design and research of the integrated circuits in the related field has gained more and more attention in recent years. And with the advance of the IC process technology, the cutoff frequency of MOS devices can reach several giga herz or more. It is a trend that CMOS process will replace the III-V compound process such as gallium arsenide or silicon bipolar process which were dominant in the fields of radio frequency and microwave.

近年来，由于无线通信技术的飞速发展，相关领域的集成电路的设计研究也受到越来越多的关注；同时由于工艺技术的不断进步，MOS器件的特征频率也可以达到几个GHz或更高的水平，原来在射频、微波领域占主导地位的三五族化合物半导体工艺如砷化镓及硅双极型工艺也有逐渐被CMOS工艺所取代的趋势。

It is sure that CMOS process will be replacing the III-V compound process such as gallium arsenide or silicon bipolar process that were dominant in the fields of radio frequency and microwave.

采用CMOS工艺进行射频电路设计的一个好处是，使得模拟射频收发器电路和基带信号处理电路由同种工艺实现，迎合了单片系统集成的发展趋势。

Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate.

用自制的聚合硅酸铁对砷化镓生产中的含砷废水进行混凝处理。

Employees of large companies.(Such as IBM, General Electric and Hewlett Packard), also frequently break away and form their own small companies to develop, produce and market new advanced products, services and technologies, such as the gallium arsenide high-speed semi-conductor as a replacement for silicon.

像国际商用机器公司、通用电器公司和赫勒特-帕克特公司这些大公司的雇员也常常离开公司，成立他们自己的小公司，开发、生产和销售新的先进产品，提供服务和技术，如用砷化镓高速度半导体来代替硅片。

Bumps growth on alumina substrate side and gallium arsenide chip side were processed and discussed as well as the flip-chip bonding process.

本实验尝试以不同尺寸大小的共平面波导传输线，配合凸块位置的分布，研究其在高频下的S参数表现。

The compound semiconductors of III-V Group just as gallium arsenide have hige carrier transition ratio and good optoelectronic performance, so the study and application of these materials are very hot.

以砷化镓为代表的Ⅲ-Ⅴ族化合物半导体具有高度迁移率和比硅更优异的光电子等性能，许多国内外关于这类材料的研究和应用一直是热门课题。

The discovery of superconductivity with a critical temperature higher than 40 K in the iron arsenide LnFeAs has drawn much interest in condensed matter physics.

最近，由于在铁基LnFeAs化合物及其相关化合物中发现具有高于40K的超导电性，层状的铁基化合物引起了凝聚态物理学界很大的兴趣和关注。在随后的研究中发现，在该类材料中最高超导临界温度可达到55K。

Listen,point and check your answers.

听，指出并且检查你的答案。

Warming needle is one of effective treatment methods for knee arthralgia aggravated by cold,and it is simple,safety,so it should be developed in clinical acupuncture and moxibustion extensively.

但以本院科针灸门诊在2005年1月—2006年6月期间共收治膝痛患者100余例，经过临床的诊断后，其中施以温针治疗的48例，疗效显著，报道如下。1临床资料本组病例48