查询词典 high-speed buffer

In order to application on high resolution of liquid crystal display, which must reduce differential error voltage in digital-to-analog converter circuit. So, how to reduce the offset voltage of buffer amplifier is important. In the second buffer amplifier circuit, to promote the open-loop gain to reduce offset voltage.

若要使液晶显示器的色彩深度能够大幅提升，就必须采用位元数较高的数位类比转换电路，也就表示其输出的每一灰阶类比电压值的差将会随著位元数的增加而变小，因此输出缓冲放大器的偏移电压就显的特别重要。

With the development of science,TCM had not got development because it inappropriately had the aid of philosophy to deal with something,but TCM had got high elastic buffer same as philosophy,so,the system of TCM still had not got a sudden change.

随着科学的发展，因不恰当地借助于哲学化处理的中医学在近现代并未得到发展，但由于中医学已具有哲学般高弹性的缓冲性，故中医学体系仍未突变。

With the development of science, TCM hadn't got development because it inappropriately had the aid of philosophy to deal with something, but TCM had got high elastic buffer same as philosophy, so, the system of TCM still hadn't got a sudden change.

随着科学的发展，因不恰当地借助于哲学化处理的中医学在近现代并未得到发展，但由于中医学已具有哲学般高弹性的缓冲性，故中医学体系仍未突变。

The Electrochemical measurement system used to perform DPSV measurement is constructed with two parts, a low-current measurement system consists of low input bias current operational amplifier and a high resolution SAR ADC and a potentialstat consists of high resolution DAC and high current buffer amplifier.

对于差分脉冲伏安溶出测量，我们使用高精度连续逼近寄存器型ADC和低偏置电流运放构成微电流采样系统；使用高精度DAC和高速大电流缓冲放大器构成了恒电位计，在微控制器的控制下组成电化学测量系统。

The controller uses the data write buffer to reduce the data access waiting time, and employs the two ways of duo channels instruction pre-fetch buffer to decrease the fetching instruction waiting time and increase the instruction pre-fetch buffer hit rate. Meanwhile, to reduce the waiting time aroused by page miss of SDRAM, a four ways of on chip stack memory is introduced. Compared with traditional controller through experiments the novel SDRAM controller gets a high reduction up to 63% in access waiting time and 64% in page miss.

该控制器采用数据写缓存方式降低了数据在存取内存时的等待时间；并引入了两组双通道预取指令缓冲器，每组双通道都用以减少取指令时的等待时间，采用两组的结构是为了增加指令预取的命中率；同时还使用了四路组关联的片上堆栈存储器来降低SDRAM的页失效频率，从而降低了因页失效而需要等待的时钟周期。

When the burst length is 1, 2, 4 and 8 the DOUT buffer automatically becomes High-Z at the next clock after the successive burst-length data has been output.

突发读长度为1、2、4、8时，输出缓冲区会在读完数据的下一个时钟上升沿进入 High-Z 状态。

Trans-Blot Cells and Systems 170-3825 Trans-Blot Cell With Wire Electrodes and PowerPac HC Power Supply, 100120/220240 V, includes 2 gel holder cassettes, buffer tank, lid with power cables, 4 fiber pads, 1 pack precut blot absorbent filter paper (15 x 20 cm), power supply, power cord, instructions 170-3850 Trans-Blot System With Plate Electrodes and PowerPac HC Power Supply, 100120/220240 V 170-3853 Trans-Blot System With Plate Electrodes, Super Cooling Coil, and PowerPac HC Power Supply, 100120/220240 V, includes 2 gel holder cassettes, buffer tank, lid with power cables, 4 fiber pads, 1 pack precut blot absorbent filter paper (15 x 20 cm), power supply, power cord, instructions 170-3910 Trans-Blot Cell With Wire Electrodes, includes 2 gel holder cassettes, buffer tank, lid with power cables, 4 fiber pads, 1 pack precut blot absorbent filter paper (15 x 20 cm) 170-3939 Trans-Blot Cell With Plate Electrodes and Super Cooling Coil, includes 2 gel holder cassettes, buffer tank, lid with power cables, 4 fiber pads, 1 pack precut blot absorbent filter paper (15 x 20 cm) 170-3946 Trans-Blot Cell With Plate Electrodes, includes 2 gel holder cassettes, buffer tank, lid with power cables, 4 fiber pads, 1 pack precut blot absorbent filter paper (15 x 20 cm) Trans-Blot Cell Accessories 170-3912 Super Cooling Coil, required for all high-intensity transfers 170-3913 Gel Holder Cassette, includes 2 fiber pads 170-3914 Fiber Pads, 15.5 x 20.5 cm, 6 170-3920 Trans-Blot Standard Wire Electrode Card, cathode 170-3921 Trans-Blot Standard Wire Electrode Card, anode 170-3922 Trans-Blot Cell Buffer Tank 170-3923 Trans-Blot Cell Lid With Power Cables 170-3943 Trans-Blot Platinum Anode Plate Electrode 170-3944 Trans-Blot Stainless-Steel Cathode Plate Electrode 170-3945 Trans-Blot Plate Electrode Pair, platinum anode and stainless-steel cathode 16 规格:说明: Trans-Blot Plus

电泳转印槽组件 1。缓冲液槽及带有电缆的盖 2。凝胶支架转印夹 3。纤维衬垫 4。电极丝 5。电极板 6。特级冷却芯 Trans-Blot 转印槽是功能灵活的转印设备，可理想地用于多种转印应用。Trans-Blot 转印槽特点包括：*能进行多胶转印，可容纳3 块PROTEAN I xi 凝胶、6块Criterion 凝胶、12块Mini-PROTEAN 3 或Ready Gel 预制胶*多组参数灵活可设，可调节的电压设置（从30 V 的过夜转印到200 V 的1 小时快速实验）*电极间距设置为8 cm 用于标准印迹杂交，或设置为4cm 用于高强度印迹杂交*可选择板式电极：涂有铂金的钛作为正极，不锈钢为负极，能提供高强度电场和比其它电极更高的电流密度。或选择较经济的铂金电极丝*通过特级冷却芯和水循环仪来调节温度―是天然酶（4°C）或高强度转印的理想选择，随着转印时间增加（多达24 小时），不会引起缓冲液耗竭（在高强度转印中必须使用冷却芯，也推荐用于所有板式电极的应用）*带铰链的凝胶支架转印夹能避免滑动，确保凝胶与印迹膜间的紧密接触；每个转印夹都有颜色标记以保证在转印槽中的正确定位 Trans-Blot 转印槽的锁闭凝胶支架转印夹系统。转印夹（1）支撑凝胶（2）印迹膜（3）两侧有纤维衬垫和滤纸（4）确保凝胶三明治内的完全接触。凝胶夹垂直插入缓冲液槽中（5）。

Commercial manufacturers will often use a low-molarity buffer so that the consumer can easily resuspend the conjugate in the buffer of his or her choice. Generally, high-salt buffers and surfactants should be omitted from the final storage buffer as they may cause damage by hydrolysis or displacement of the antibody.

最终储存用的缓冲液应避免使用高盐缓冲液和表面活性剂，因为它们可能水解或取代抗体。

It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.

众所周知，晶格失配和热应力失配是GaN异质外延中位错产生的主要原因；为此，我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试，其中尝试了侧向外延生长技术，得到了低位错密度（小于10〓/cm〓）、高质量的GaN外延层；尝试多低温缓冲层法，发现材料中的应力特性与生长系统和生长条件有关，材料中的应力与位错密度按相反方向变化；首次尝试高低温联合缓冲层法，材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大，从而导致随后高温GaN外延膜中位错密度降低，并且能够有效地抑制黄光峰。

The method comprises: when the sending end receives a high priority SDU from upper layer, the fragmentation, cascade connection and filling are made for the high priority SDU to form HPDU, and then the HPDU is inserted in front of the PDU already completing the fragmentation, cascade connection and filling, and not yet sent out; based on the head expansion type or the length indication, a PDU is determined as a HPDU; in addition, establishing a buffer, and inputting the value of LI ah HE into the buffer; after all HPDUs of a same SDU are collected, a SDU is recombined and is sent to upper layer.

一种无线链路控制层发送确认模式交织协议数据单元的方法，在发送端收到上层高优先级SDU时，将该高优先级SDU进行分片、串接、填充处理形成HPDU，插入到已经完成分片、串接、填充处理但尚未发送的PDU前，使用HE或LI长度指示标识HPDU，实现优先发送HPDU；在接收端接收下层PDU，根据PDU中的头扩展类型HE或者长度指示LI判断为HPDU；另外开辟缓冲，根据长度指示LI和HE值将HPDU中的数据放入该缓冲；同一SDU的所有HPDU收齐，重组成SDU向上层投递。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。