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Produced by various models (0603,0606,0805,1206,1210,1104,1311, etc.), color (red, yellow, yellow-green, green, blue, pink, white, etc.) Products with high brightness, voltage low, consistency and long service life, etc..

公司生产的各种型号(0603、0606、0805、1206、1210、1104、1311等)、颜色(红色、黄色、黄绿色、绿色、蓝色、粉红色、白色等)的产品具有亮度高,电压低、一致性好,使用寿命长等优点。

The results showed that the TiN andN films are polycrystalline phase. The properties and structure of TiN films are mainly determined by the N2 mass flow rate, and as the N2 mass flow rate increases, the structure of the TiN films transforms to f.c.c. type leading to better the properties of films. The presence of negative bias voltage can optimize the grain of TiN films, lower the defect proportion and denser the films, which improves the hardness of films. The TiN films conform to the free carrier absorption mechanism and there are many of free electrons with lower N content in TiN films. With the increase of N content, the quantity of free electrons and reflectivity of films decrease, and the plasma frequence shifts to the lower energy, which leads to the regular change of colors of films from silver, yellowy, golden to yellow-red, meanwhile the lightness of films decreases. The goldenN film consists of TiN and ZrN phase, but belongs to a sigle f.c.c. structure with (111) preferred orientation. The Zr-doping dosen't change the position of the valance band, conduction band and forbidden band ofN film, but leads to the presence of new energy levels, which is the reason thatN film remains golden. The transparent hard films with good corrosion resistance and high hardness have been prepared and the further reseachs showed that the grain size of those films is by far smaller than the wave length and the width of forbidden band of those films is very broad, is the reasons that those films are transparent.

研究表明:氮化钛和N 薄膜为多晶态,氮流量决定了氮化钛薄膜的结构和性能,增加氮流量能使氮化钛薄膜的结构向面心立方结构转变,从而得到性能良好的氮化钛薄膜;施加负偏压能优化氮化钛晶粒和减少薄膜中的缺陷,使膜层变得更致密,从而提高薄膜硬度;氮化钛主要遵循自由载流子光吸收,氮含量较少时薄膜中的自由电子数目较多,随着氮含量的增加,薄膜中的自由电子数目不断减少,反射率逐渐降低,等离子体频率向低能端移动,从而使薄膜颜色出现规律变化,由金属色银白色到淡黄、金黄再到红黄,并且薄膜亮度呈下降趋势;金黄色的N 薄膜中存在TiN 和ZrN 的分离相,但其为单一的面心立方结构并具有(111)面择优取向;相对于TiN 薄膜,Zr 掺杂后,并没有使薄膜的导带、价带和禁带发生变化,只是在TiN 禁带内增加了新能级,这也正是掺杂Zr 后,薄膜仍

The good performance is related to the low work-function metal, Ytterbium, makes the threshold voltage lower successfully and small equivalent oxide thickness by high κ dielectric material.

这些良好的特性是因为拥有低功函数的镱可以成功的将临界电压降低,还有高介电系数介电层闸极可以得到较薄的等效氧化层厚度。

5 Pinout: DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZDA2V4 Series silicon dual zener diode is a high quality voltage regulator, connected in a common anode configuration, for use in industrial, commercial, entertainment and computer applications.

641215-5引脚说明:描述:中央半导体CMPZDA2V4系列硅双齐纳二极管是一种高品质电压调节器,在一个共同的阳极连接配置,使用在工业,商业,娱乐和计算机应用。

Bi-level refers to two levels. For sync, this means apulse having two voltage levels (a high and low level, relativelyspeaking), hence the name.

双电平指的就是两个电平,对于同步信号来说,顾名思义,这意味着一个脉冲包含了两个电平值(相对而言,就是一个高电平和一个低电平)。

Organic Light-emitting Devices have been considered as the dominant candidates for prospective electronic devices and will replace the liquid-crystal display technology gradually , because they have a series of attractile advantages such as high luminescence efficiency, full colour display, broad viewing angle, low operation voltage, short response time, low working temperature, etc.

有机发光器件(Organic Light-emitting Devices,OLEDs)具有高发光效率、全彩显示、广视角、低驱动电压、快速响应和低工作温度等一系列引人注目的先天优势,被认为将在很多领域逐渐取代液晶显示技术,成为下一代显示器的主导。同时,基于有机半导体的有机器件由于其广阔的应用前景而越来越多地受到人们的关注。

The 92HD83 single-chip audio system is a low power optimized, high fidelity, 6-channel audio codec with integrated speaker amplifier, dual capless headphone amplifier, and low drop out voltage regulator.

IDT公司的92HD83是六路PC音频系统方案,具有最佳的功耗,集成了六路音频CODEC和扬声器放大器,双路无电容的耳机放大器和低压降电压稳压器。

Based on the HSPICE simulations, the proposed trigger has full swing, no static current. And it's transmission delay has little influence by load captance. With these characteristics, this circuit is very suitable for lower voltage and low power, high speed applications.

该电路采用0.6μm的CMOS工艺设计,并通过HSPICE验证,表明这种施密特触发器具有全摆幅输出、几乎不存在静态功耗、传输延迟几乎与负载无关等优点,比较适合在低电压、低功耗、高速便携设备中应用。

This article first introduced designs the high efficiency cocurrent voltage-stabilized source's composition structure and the control principle, and on the power source main circuit, the control circuit, the protection circuit as well as the control system software's design did have analyzed in detail.

本文首先介绍了所设计的大功率直流稳压电源的组成结构和控制原理,并就电源主电路、控制电路、保护电路以及控制系统软件的设计做了详细地分析。

This article first introduced designs the high efficiency cocurrent voltage-stabilized source's composition structure and the control principle, and on the power source main circuit, the control circuit, the protection circuit as well as the control system software's design did have analyzed in detail.

但是,上述这些新型功率开关器件也存在一些弱点,如电压与电流的过载能力弱,当工作参数超过其安全范围是,非常容易损坏。因此给电路结构的设计与制造提出了新的要求,并且需要快速而有效的保护措施

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相关中文对照歌词
High Voltage
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