查询词典 high voltage

The results show that the capacitive voltage divider and the current monitor are ideal probes for measuring high pulsed voltage and current.

测量的准确性取决于测量探头的性能和标定，因此对测量探头的稳定性、响应时间、灵敏度和负荷功率均有一定要求。

In this paper, we use a computer sound card to replace the data acquisition card in the industrial, applicate LabVIEW based graphical programming language to develop a voltage signal acquisition system to collect voltage signal, the method is simple, high cost-effective.

本文采用计算机声卡来代替工业用的数据采集卡，应用基于图形化的编程语言LabVIEW开发一个电压信号采集系统实现电压信号的采集，该方法实现简单、性价比高。

Dependence of flashover voltage on several physical factors, that is applied voltage waveform, predischarge conditioning, geometry shape and length, geometry area, dielectric material, surface treatment, magnetic field effects and multilayer high gradient insulator technology, are expatiated.

文中系统总结了目前高压真空绝缘闪络特性的实验研究成果，具体阐述了几种典型实验模型及研究方法，以及几种重要物理因素，即绝缘材料介电常数、绝缘体几何形状及长度、施加电场波形、绝缘体表面处理、绝缘体几何面积、绝缘体预放电处理、磁场作用、多层高梯度绝缘技术等等，对真空绝缘闪络特性的影响。

The effective channel mobility of4H-SiC MOSFETs is increased significantly by high temperature anneals in nitric oxide.4H-SiC MOSFET with hydrogen postoxidation annealing has a lower threshold voltage of3.1V and a wide gate voltage operation range in which the inversion channel mobility is more than100cm 2 /Vs.

SiC的雪崩击穿电场是Si的十倍，因此，理论上SiC单极功率器件的导通电阻可以比Si器件的低400倍，但在6H-SiCMOS结构中，由于反型层的电子迁移率较小，沟道迁移率测量值仅为40～50cm2/Vs，远远低于6H-SiC的体迁移率400cm2/Vs眼1熏2演，限制了SiC功率MOSFET的导通电阻Ron。

The surface state and electrochemistry properly platinum-plated on open-cell foamed titanium electrode was investigated and he compared with IrTi anode and platinum-plated titanium toil cathode. The results show that open-cell foamed titanium can uniformly coat with excellent bonding strength platinum-plated, thickness coating 2 μm. The cathode release hydrogen voltage of platinum-plated on open-cell loamed titanium electrode is fall. The anode release oxygen voltage of platinum-plated on open-cell foamed titanium electrode is higher than Irli anode in high current.

采用电镀技术在多孔钛表面沉积了均匀的铂金属层，分析了多孔钛镀铂后的表面状态及电化学性能，并与IrTi涂层阳极及镀铂钛网阴极进行比较，结果显示：多孔钛板开孔孔隙表面可均匀沉积结合力良好的铂层，镀层厚度为2μm；镀铂多孔钛阴极析氢电位比镀铂钛网高，且在大电流下，阳极析氧电位比IrTi涂层阳极高。

Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate

不扩散核武器条约IGBT技术特点的低饱和电压低开关损耗开关频率高达30 kHz的方RBSOA，没有闭锁了高短路能力正温度系数，方便parallelling马鞍山输入，电压控制超高速免费续流二极管，用于印刷电路板焊接的引脚与铜底板的安装包

Abstract］ Objective To appraise application value of indirect digital radiographyin silicosis diagnosing.Methods The chest of the confirmed diagnosis of 103 cases of silicosis and 25 objects of observation are radiographed by the CR common thousand voltage and the tradition high thousand voltage,appraise the radiograph quality and divide the period of silicosis.

摘要］ 目的评价间接数字X线摄影术在尘肺诊断中的应用价值方法将确诊的103例尘肺患者和25例观察对象，分别用CR普通千伏（60～70 kV）与传统高千伏（120～130 kV）拍摄其胸部X线片，对其胶片质量和尘肺分期进行评定。

On the basis of experiment analyses we would got that, When arc met with chute, it was blocked and had a stagnation, this made hot gas flow incrase near the chute; After arc went into the chute, mental vapor from arc root would lower the dielectric strength near the chute, meanwhile, High value of arc voltage and the corase face of the chute made electric strength increase. These factors might give rise to local restriking near the chute, and made arc voltage drop suddenly.

总结实验结果并加以分析，本文提出了这样的观点：电弧进入栅片时，在入口处受阻后的停滞，会使该区域的热气流增加；进入栅片后，弧根蒸发的金属蒸汽、电弧热气流会降低栅片入口区域的介质强度；电弧被栅片分割后，电压急剧上升，再加上栅片表面的不均匀会使局部区域的电场强度显著增加，这些因素的综合作用会导致电弧在栅片入口附近发生局部重击穿，引起电弧电压电压跌落。

The method retrenches PLL circuit,not bound by frequency offset and measures the fundamental current accurately when the network voltage is distorted or asymmetric.A simulation model of voltage source high power active power filter system is found in Matlab/Simulink software.

本文在Matlab/Simulink软件中搭建出系统仿真模型，并与采用单个PWM变流器的有源电力滤波器比较，验证了本文设计的方法能够在较低的器件开关频率下实现较好的补偿效果，具有良好的工业应用前景。

Through theoretic reckoning and simulating analyzing, several control strategies for shunt APF were compared and chose ip-iq arithmetic ofthe instantaneous reactive power theory control strategy as the right scheme to produce the instructing current. Based on it, some new control arithmetic was subjoined to suppress the resonance in system and balance the dc side capacitor voltage. Two topologies of main circuit were compared and chose the three-phase voltage-source converter with a split-capacitor as its main circuit structure. The numerical scales of the dc side capacitor and inductance of reactors were calculated. The high-pass filters were designed to eliminate effectively the highfrequency harmonics produced by APF.

通过理论计算和仿真分析，比较了并联型APF的几种控制策略的优点和缺点，从中选择瞬时无功理论控制策略i_p-i_q计算方式为指令电流产生的算法，并在此基础上增加了抑制系统谐振和平衡直流侧电容电压的控制；比较了并联型APF主电路的两种常见形式，从中选择了三相电压型变流器的主电路形式；算出适合该APF的直流侧电容和出线电感的参数；设计出能有效消除APF产生的高次谐波的高通滤波器。

She gently rebuff ed him, but agreed that they could be friends

她婉言拒绝了，但同意作为朋友相处。

If in the penal farm, you were sure to be criticized.

要是在劳改农场，你等着挨绳子吧！