查询词典 helicon

The hardware included helicon wave antenna and focusing system.

其中硬件系统主要包括：螺旋波天线和辉光聚焦系统的设计；PCL-818HG数据采集卡输出的+5V稳定信号，经过分压电阻和三极管后，作为数控器的外部启动/停止信号，控制步进电机带动光谱仪转动；另外，为了减小光电倍增管的噪声，单独为其提供了稳定的高压直流电源。

ZnO films naturally doped and codoped with N and Al are deposited by helicon wave plasma assisted sputtering method. Their photoluminescence properties have been studied at low temperature.

采用螺旋波等离子体辅助溅射技术制备了自然掺杂及N-Al共掺杂ZnO薄膜，对两种不同类型掺杂薄膜的低温光致发光特性进行了研究。

Epitaxial AlN films have been successfully deposited on GaN/Sapphire substrates at low-temperature (300℃) using Helicon sputtering system.

本研究之目的是在GaN/Sapphire基板上低温成长AlN的磊晶薄膜，并探讨各种溅镀条件对AlN薄膜品质的影响，以及研究AlN/GaN介面所感应之二维电子气现象，证实介面间受极化效应感应产生的二维电子气确实存在。

Hydrogenated amorphous silicon nitride films have been deposited by helicon wave plasma enhanced chemical vapor deposition, the effect of SiH4/N2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a-SiNx:H films with different compositions are deposited.

本工作采用螺旋波等离子体化学气相沉积方法制备了氢化非晶氮化硅薄膜，系统地研究了不同反应气体配比对薄膜特性的影响，得到了沉积不同组分a-SiN_x：H的典型实验条件。

Helicon wave plasma; nc-SiC; energy gap characteristics

螺旋波等离子体；纳米SiC；能带特性

Discussion focuses on the operating principles and structures of the newly developed high density plasma sources,including electron cyclotron resonance,inductively coupled plasma and helicon wave plasma.

对电子回旋共振等离子体，感应耦合等离子体，螺旋波等离子体等几种新型的高密度等离子体源[1] 的工作原理及结构重点作了分析讨论，并从运行参数上对其进行了比较。

Because our laboratory use helicon sputtering system that is MBE-like to deposit aluminium nitride film experience for many years , and control to the understanding and quality of the aluminium nitride film has sutible confidence . Comprehensive above-mentioned material advantages , we choose aluminium nitride as the high dielectric constant material in our research .

此外由於本实验室使用具有类MBE成长机制之回旋溅镀系统成长氮化铝薄膜已有多年经验，使得氮化铝成为本研究中的高介电值材料。

The epitaxial ZnO films are prepared on Al2O3 substrates by using helicon wave plasma assisted sputtering technique. The as-grown and annealed films showed different in-plane orientations.

采用螺旋波等离子体辅助溅射沉积法在衬底Al2O3的(0001)面上沉积ZnO薄膜，所生长的薄膜在未退火和退火时表现出不同的平面内取向。

Hexagonal nano-silicon carbide thin films doped and undoped with phosphorus which possess a characteristic of the ultraviolet photoluminescence have been deposited by helicon wave plasma enhanced chemical vapour deposition technique under the high hydrogen condition in this work. The optical and electric properties of the doped nano-SiC films together with the electric and photovoltage properties of the n-p nc-SiC/Si heterojunction is studied and analyzed.

本工作利用螺旋波等离子体化学气相沉积技术在高氢气条件下制备了具有紫外发光的六角晶型纳米碳化硅，对这种材料进行了不同比例的磷掺杂，并对这种掺杂的纳米碳化硅的光学、电学特性以及nc-SiC/Si异质结的电学特性和光电压特性进行了研究。

In this thesis, the AlN thin films were deposited on SiO2/Si and GaN/Sapphire substrates respectively for layered structure SAW devices by Helicon sputtering system. Laser ultrasound system was used to measure the acoustic wave velocity of AlN/SiO2/Si layered structure. Frequency response and insertion loss were measured by an HP8510C vector network analyzer to analysis insertion loss, sidelobe and quality factor. The results showed the possibility of incorporating thin films SAW devices with other semiconductor devices.

本研究使用回旋溅镀系统分别在SiO2/Si、GaN/Sapphire两种基板上沉积AlN并制作层状表面声波元件，并利用雷射超音波系统量测AlN/SiO2/Si结构之表面波速及机电耦合系数，再利用网路分析仪量测其频率响应，分析其插入耗损、 sidelobe、品质因子Q，以比较不同基材所制作之层状表面声波元件之特性，此研究成果初步验证AlN层状表面声波元件与半导体元件整合之可行性。

More direct, directer ; most direct, directest

径直的，笔直的

Do you know how to use a chain saw?

你知道如何使用链锯吗？