查询词典 gate

The motive of this paper is to investigate the relationship between deposition parameters and its properties in order to prepare excellent silicon nitride silicon thin film for gate insulator of TFT.

本实验通过系统地改变沉积参数，在经过清洗好的单晶硅片上沉积了一系列的氮化硅薄膜。

Using a new material with a dielectric constant greater than that of SiO2 to replace SiO2 film as gate dielectrics is an indispensable task.

因此利用高介电常数材料取代现今的二氧化矽成为不可避免的趋势。

It is said that Bruce Lee's baby, the Hollywood film "Golden Gate women" need appearance of a Chinese baby, have gone to Bruce Lee.

据说在李小龙尚在襁褓里的时候，好莱坞电影《金门女》需要一名华人婴儿出镜，抱去了李小龙。

Film Gate: Components that make up the pressure and aperture plates in a camera, printer, or projector.

片门：在摄影机，印片机或放映机用来调整压力和片门板的零件。

The work done previously is experiential. To this day, the researches on silicon nitride thin film prepared by PECVD stay initial stages, so it is necessary to further develop PECVD. On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

前人做的工作大多也都是经验性的，至今人们对PECVD 氮化硅薄膜的研究还很不成熟，尚处于研究探索的阶段，从而在理论上有必要对PECVD 法氮化硅薄膜做进一步的研究；与此同时，制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管这一课题的需要。

A tensile-strained stress film is deposited on the gate region and at least a portion of the source region and the drain region of the PFET.

张应力应变膜(76)沉积在PFET(52)的栅极区(64)与至少部分的源极区(60)和漏极区(58)上。

The gate insulating film 7a includes an extended part.

栅极绝缘膜7a含有延长部分。

This reduction in crystalline silicon prices also had the effect of eroding their percentage premium to thin film factory gate pricing.

多晶硅生产排名前七名的制造商们，在2009已经达到能生产114 500吨能力，增长92％与2008年的相比，而前8晶体硅制造商生产能力，在2009年占全球总生产晶体硅制造生产力的32.9％。

A tensile-strained stress film is disposed on the gate region and at least a portion of the source region and the drain region of the PFET.

张应变应力膜设在PFET(52)的栅极区(64)与至少部分的源极区(60)和漏极区(58)上。

In this thesis, the device degradation of low-temperature polycrystalline thin film transistor under gate AC stress in off region with drain bias has been investigated.

在这篇论文中，我们研究了低温复晶矽薄膜电晶体在闸极负偏压脉波且汲极直流偏压的劣化，我们观察到在汲极端会有一个严重的劣化，当闸极操作在负偏压交流讯号且汲极直流偏压下会量测到一个电流(在此我们称为pump current)。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。