查询词典 gate

He held a bunch of flowers at the school gate to wait for his girlfriend.

他举着一束花在学校大门口等他的女朋友。

Polymer-based thin film transistors with poly(3-hexylthiophene)(P3HT) as semiconducting active layers were successfully fabricated on silicon substrates in air which was used as gate electrode, HfTiO film deposited by RF sputtering method was used as gate insulators, and gold metal was used as source and drain electrodes. The HfTiO surface was modified by using octadecyltrichlorosilane solution during fabrication process.

以高掺杂Si单晶片作为衬底且充当栅电极，采用磁控溅射法在硅片上沉积HfTiO薄膜作为栅介质层，聚三己基噻吩(P3HT)薄膜作为半导体活性层，金属Au作为源、漏电极，并采用十八烷基三氯硅烷对栅介质层表面修饰，在空气环境下成功地制备出聚合物薄膜晶体管。

North of the city because no mountains, there areweng cheng things "S"-shaped channel, from West to East by the South Gate of buildings which have outer profile, outside the South Gate and outside the city.

城北因依山而无门，东西瓮城内有&S&形通道，从西城经南门至东城筑有外廓，南门外并有外城。

The gate of each fet is tied through a diode to the electronic switch control flipflop so the gate can be pulled to ground, which is -4.5V compared to the source.

门每个FET的联系，通过二极管的电子开关控制触发器这么门可以拉到地面，那就是4.5v相比源泉。

Kainan Cemetery, East Gate, South Gate to the main entrance.liang bi gaterong zi and comrades are personally inscribed couplet:"heroic efforts in exchange for national well-being of the martyrs lay sweat national security."

大门两壁是戎子和同志亲笔题写的对联：&英雄功劳换来民族幸福，烈士血汗奠定国家安全&。

Each of the transistors 100, 102, 104 and 106 has a control gate and a floating gate.

晶体管100、102、104和106中的每一者具有控制栅极和浮动栅极。

Ion gate is one of the important parts in an ion mobility spectrometer.The main function of the ion gate is to control the ions to fly into the drift tube in pulse mode.

离子门是离子迁移谱仪的一个重要部件，主要作用是用来控制离子以脉冲的方式有效地进入迁移管。

Take only half hour to complete and the gate has a 0.75mm grid spacing. Meanwhile, the influence of the voltage on the ion gate was studied. The drift tube was easily machined and assembled.

在仪器的关键部件――离子门，研制了一种成本低，制作工艺简单的离子门，该离子门相邻金属丝间距为0.75mm，同时考查了离子门处电压特性对迁移谱的影响。

The main factors determined IMS resolutions are the initial ion gate pulse width and diffusion in the drift tube. We conclude the homogeneity of the electric field in the drift tube through analyzing the relation between resolution and ion gate pulse width and drift tube temperature. It is still concluded that inhomogeneity of the electric field has much influence on IMS resolution, which is generally ignored previously.

IMS分辨率最主要的决定因素是离子门脉冲的开门时间和离子在迁移管内的扩散效应，根据在不同离子门开门时间和不同温度下所作的分辨率关系曲线，我们推断出了迁移管内电场的均匀情况，并且得出在一般的IMS工作条件下，迁移管内电场的不均匀对分辨率也有很大的影响，这在以前人们讨论IMS的分辨率时通常被忽略，并没有引起足够的重视。

Heaviside function was proposed to create a precise arithmetic model of the threshold gate. The model can describe both the set and reset behavior of the threshold gate.

提出采用Heaviside函数建立可精确描述门限门行为的数学模型，该数学模型可描述门限的置位、复位行为。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。