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Further, the degradation due to single-electron locally trapping/de-trapping in horn-shaped SuperFlash does not occur in the triple-gate flash cell. This is because of planar poly-to-poly erasing in the triple-gate flash cell instead of tip erasing in the horn-shaped SuperFlash cell.

但是，在这篇论文中，我们发现经过长期循环擦写后，三栅 SuperFlash闪存在电子被擦除后的阈值电压的增加不是因为编程时而导致的浮栅氧化物的退化，而是由于擦除时所造成的隧穿氧化物的退化。

From geographical point of view, this auction weary foot shop in Street, 900 Town Plaza Tower and the city, south of Nanjing Road West, the opposite is Xiachenshiguangchang Jingan Park and West along Huashan Road and Lock Gate Hotel 100, Lei Yun, and 100 drug City Gate dance music, Export professional ignorance Yuen Road restaurant, and entertainment integrated, North Street and Temple.

从地理位置上看，此次拍卖的沿街商铺东依步行街、九百城市广场和城市航站楼，南临南京西路，对面就是静安公园和下沉式广场，西沿华山路以及百乐门大酒店、雷允上药城和百乐门舞厅，北靠愚园路餐饮娱乐专业街和庙北综合楼。

From geographical point of view, this auction weary foot shop in Street, 900 Town Plaza Tower and the city, south of Nanjing Road West, the opposite is Xiachenshianchang Jingan Park and West along Huashan Road and Lock Gate Hotel 100, Lei Yun, and 100 drug City Gate dance music, Export professional ignorance Yuen Road restaurant, and entertainment integrated, North Street and Temple.

从地理位置上看，此次拍卖的沿街商铺东依步行街、九百城市广场和城市航站楼，南临南京西路，对面就是静安公园和下沉式广场，西沿华山路以及百乐门大酒店、雷允上药城和百乐门舞厅，北靠愚园路餐饮娱乐专业街和庙北综合楼。

The present invention relates to an inrush current limiter device for limiting inrushing current to a connectable load comprising: at least one switchable IGBT (Insulated Gate Bipolar Transistor)-based limiter unit for selectively limiting the inrushing current, having at least one current limiting conductor element for limited leading of current, and at least an IGBT-based switch, whereby the IGBT(Insulated Gate Bipolar Transistor)-based switch (Q2) is used as well as a controlled current limiter and as a by-pass element, and at least one control device for controlling the IGBT-based switch, whereby the control device comprises at least one IGBT-based switch supply and means for realizing a smooth flank of an output signal at the selected conductor element.

本发明涉及一种用于限制针对可连接负载的浪涌电流的浪涌电流限制器设备，包括：至少一个可开关的基于IGBT的限制器单元，用于选择性地限制浪涌电流，其具有至少一个限流导体元件，该限流导体元件用于有限引导电流，和至少一个基于IGBT的开关，其中基于IGBT的开关(Q2)用作受控电流限制器和旁通元件，和至少一个控制设备，用于控制基于IGBT的开关，其中控制设备包括至少一个基于IGBT的开关电源和用于实现选定导体元件处的输出信号的平滑侧面的装置。

Yanshan's that street room, the back wall on the pedal on the stone steps, is lower than front wall one ten feet of two ten feets, even did not have the wall, the gate is inlays on the cliff chisels the hole to occupy, that iron claw grass, crawls the wall cane to multiply on the reason gate brain, is similar to a decorative carving.

沿山的那面街房，后墙就蹬在石坎上，低于前墙一丈两丈，甚至就没有了墙，门是嵌在石壁上凿穴而居的，那铁爪草、爬壁藤就缘门脑繁衍，如同雕饰。

Thai mainly producing all kinds of forged steel valves, cast steel valves, including valve type (flat gate valve, knife-shaped gate valve), valve, check valve, ball valve, cryogenic valve, regulating valve (electric valve, pneumatic control valve), power station valve, slurry valve, butterfly valve, throttle, guided showering valve, traps, needle valves, safety valves, breathing valve valve series products.

泰通阀门主要生产各种锻钢、铸钢类阀门包括闸阀、截止阀、止回阀、球阀、低温阀、调节阀（电动调节阀，气动调节阀）、电站阀、浆液阀、蝶阀、节流阀、导淋阀、疏水阀、针型阀、安全阀、呼吸阀等系列阀门产品。

Along with the stem of the gate valve for linear motion, and called the lift rod valve gate valve is also called the next shot.

闸阀的闸板随阀杆一起作直线运动的，叫升降杆闸阀亦叫明杆闸阀。

According to historical records, the original Watergate copper gate, together weighing heavy, gatehouse surrounded by four stone on stone block, connecting the lever to lift the gate free.

据史料记载，水门原有铜闸一道，重达千斤，门楼上四面有四个大石礅，连通杠杆，可自由升降闸门。

Gate knife hybrid folding machine: the gate to the combination of folding machine tool is blade and co-irradiated-folding machine.

栅刀混合式折页机：栅刀混合式折页机就是刀式及栅栏式折页机的组合。

See also Nozaki et al.,"A 1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application," IEEE Journal of Solid-State Circuits, Vol. 26, No. 4, April 1991, pp. 497-501, which describes a similar element in a split-gate configuration where a doped polysilicon gate extends over a portion of the memory element channel to form a separate select transistor.

还参见Nozaki等人的&A1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application&(IEEE Journal of Solid-State Circuits，第26卷，第4期，1991年4月，497-501页)，其描述了处于分裂栅极配置中的类似元件，其中掺杂的多晶硅栅极在存储器元件沟道的一部分上延伸以形成单独的选择晶体管。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。