查询词典 gate

It is mainly made up of frame, gate board, screw pole, nut etc. rotate the handwheel by hand, then the screw pole drives the nut and gate board move in horizontal to and fro to open or close the valve.

螺旋闸门工作原理 working principle 主要由框架、闸板、丝杆、螺母等零件构成，用手转动手轮使丝杆带着丝杆螺母和闸板沿水平方向往复运动，达到闸门的启闭目的。

It is mainly made up of frame, gate board, screw pole, nut etc. Rotate the hwheel by h, then the screw pole drives the nut gate board move in horizontal to fro to open or close the valve.

主要由框架、闸板、丝杆、螺母等零件构成，用手转动手轮使丝杆带着丝杆螺母和闸板沿水平方向往复运动，达到闸门的启闭目的。

It is mainly made up of frame, gate board, screw pole, nut etc.Rotate the handwheel by hand, then the screw pole drives the nutand gate board move in horizontal to and fro to open or close thevalve.

主要由框架、闸板、丝杆、螺母等零件构成，用手转动手轮使丝杆带着丝杆螺母和闸板沿水平方向往复运动，达到闸门的启闭目的。

It is mainly made up of frame, gate board, screw pole, nut etc. Rotate the handwheel by hand, then the screw pole drives the nut a nd gate board move in horizontal to a nd fro to open or close the valve.

主要由框架、闸板、丝杆、螺母等零件构成，用手转动手轮使丝杆带着丝杆螺母和闸板沿水平方向往复运动，达到闸门的启闭目的。

Traditionally,loads of the arc gate are applied on the support or gate frusta as a set of concentrated load,but the effect range of such load on the frusta cannot be solved by Material Mechanics and Structure Mechanics. Most of the load cases are fulfilled through optic-elastic test.

通常弧门荷载作为一组集中荷载作用于牛腿或闸墩上，而这组荷载对闸墩受力的影响范围材料力学方法和结构力学方法是不能解决的，受力状况大部分是通过光弹试验完成。

Second, as the gate channel length decreases, the switching time of each gate will decrease.

第二，当门的沟道长度减小时，门的开关时间会减少。

The gate insulating layer may be interposed between the gate electrode and the channel layer.

栅极绝缘层可以夹置在栅电极和沟道层之间。

An accumulation channel trench gate insulated gate bipolar transistor is proposed.

提出了一种具有积累层沟道的槽栅IGBT结构。

Gate recess is widely used in III-V compound transistors to modify the threshold voltage and optimize the device performance through adjusting the gate to channel distance.

闸极掘入是改变闸极与电流通道的距离而使截止电压改变，进而使电晶体的表现最佳化，闸极掘入的技术已经广泛的应用在三五族半导体里。

It also demonstrated that degradation slope of Vth will become lower and reach a constant quantity. Higher Temperature and gate voltage enhanced the V〓, shift of PMOSFET. With the gate oxide growing thinner and channel length growing more lessen, the influence of NBTI effects will become more and more severity.

应力温度的升高以及负栅压应力的增大都会使器件的V〓漂移增强，而且随着器件栅长L的减小，栅氧厚度T〓减薄等使PMOSFET中的NBTI效应呈现出了增强的趋势，这使得NBTI退化有可能成为未来CMOS器件发展的严重障碍。

It contains both photosynthesizing and nonphotosyn-thesizing members.

包括进行光合作用的和不进行光合作用的两种。

I'm going to my sister's house in Jersey.

我要去泽西的我姐姐家