查询词典 gate

The display substrate includes a gate line formed so as to be extended in the horizontal direction in the display region, a data line formed so as to be extended in the longitudinal direction on a gate insulating film which insulates the gate line in the display region and a gate driving circuit part formed in the first peripheral region adjacent to the first terminal part of the gate line.

第一基板包括设置在显示区域中并且在第一方向上延伸的多条栅极线、设置在使这些栅极线绝缘的栅极绝缘层上并且在实质垂直于第一方向的第二方向上延伸的多条数据线、和设置在与栅极线的第一端相邻的第一外围区域内的栅极驱动电路部分。

The company produces each kind of standard series shield gate, moreover was skilled in each kind of special specification the electrically operated aeroseal translation shield gate, to lock electrically operated double spreads the tail to shade the gate, the electrically operated promotion shield gate, manual to lock double spreads the tail to shade the gate the research and development and the production, the craft already finalized the production.

公司生产各种标准系列屏蔽门，而且更精通各种特殊规格的电动气密平移屏蔽门、电动锁紧双开屏蔽门、电动提升屏蔽门、手动锁紧双开屏蔽门的研发与生产，工艺现已定型生产。

Combined with Zhongshan-gate in Nanjing,by means of investigation and admeasurement, theoretical analysis and finite element simulation, the security analysis and reinforcement research of ancient brick-and-clay city gate structure are performed. The results would be the scientific reference to the reinforcement of brick-and-clay city gate. At the same time, the reinforcement method of barking concrete structure, another available method to renovations of brick-and-clay city gate, is put forward in this paper.

本文结合南京中山门，综合运用调查检测、理论分析和有限元模拟的方法，对砖土拱城门结构进行了安全性分析和加固技术研究，为砖土拱城门结构的加固维修提供切实可靠的科学依据；同时提出内衬混凝土空间箱型结构的加固方法，为今后对其它砖土拱城门结构的研究保护提供一定的参考。

We observe gate current by biasing the gate at fixed voltage and gate direct tunneling current will show two or three levels. The cause is carriers trapping in the trap site during tunneling through gate dielectrics and detrapping by thermal emission.

透过给一固定的闸极电压观察闸极电流，闸极直接穿隧电流会在多个层次间振动，其原因来自於电荷在穿越闸极层时，会掉进闸极层里面的缺陷并被抓住，但又容易藉著热从缺陷中散逸。

And the prince shall enter through the porch of the gate from the outside and stand by the doorpost of the gate, and the priests will prepare his burnt offering and his peace offerings, and he shall worship at the threshold of the gate; then he shall go out, but the gate shall not be shut until the evening.

46：2 王要从外面经这门的廊进入，站在门框旁边；祭司要为他预备燔祭和平安祭，他就要在门槛那里敬拜，然后出去；这门直到晚上不可关闭。

The circuits, including 4 value TTL, NOR gate and NAND gate and AND OR NOT gate and five state gate, are designed by use of bipolar transistors. They have good I/O characteristics, great load capacity and robust noise immunity, and their noise margin may reach±0.6V.

采用双极型晶体管设计出了四值TTL"或非"门、"与非"门和"与或非"门电路及五态门，这些电路均具有较好的输入输出特性、较强的负载能力和抗干扰能力，噪声容限可达到± 0 。6V。

Multiple value logic ; Discrete logic ; 4 value NOR gate ; 4 value NAND gate ; 4 value NAD OR NOT gate ; Five state gate ; DYL circuit

多值逻辑；离散逻辑；四值"或非"门；四值"与非"门；四值"与或非"门；五态门； DYL电路

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

There are four key segments in the design of the dry-dock falling gate, which have been studied in this paper: the research on the dry-dock falling gates structure design; the research on the dynamic characteristics about the dry-dock falling gate; the research on the parametric modeling of the dry-dock falling gate; the research on special simulative system of the dry-dock falling gate.

本文从四个方面对气控式干船坞卧倒门作了较深入的研究：气控式干船坞卧倒门结构设计的研究；气控式干船坞卧倒门动力学特性的研究；气控式干船坞卧倒门参数化建模的研究；气控式干船坞卧倒门专用仿真系统的研究。

The thin film transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer.

具体而言，薄膜晶体管可以包括：栅绝缘层；形成在栅绝缘层上的栅电极；形成在栅绝缘层上的沟道层；以及接触沟道层的源和漏电极。

Objective To study the effect of chitosan in the prevention of fibrous scar formation in the epidural space after laminectomy.

目的 观察选择性脊神经后根切除术椎板切除后硬膜外几种防瘢痕粘连物质的作用并探讨其机制。

On his way to the lift, he looked back to us or was it me his eyes pointing?

当他要进电梯时，他回头看我们（或者说是我，他的眼光？