查询词典 gate

Two, from mouth to the North Gate Gate Wo two things equal to the distance between, forming an angle of 60 degrees the equilateral triangle, and the best contrast ratio perspective.

二、从午门北口至太和门东西两房之间的距离相等，形成一个夹角为60度的等边三角形，所以又烘托出最佳的视角比值。

The C-V curves shows that the NiTiO3 gate dielectric can achieve a thin capacitance equivalent thickness and high gate capacitance density.

此外，由电容电压曲线图可看出钛酸镍介电质具有较薄的电容等效厚度与较高的闸极电容密度。

The gate electrode is formed on the gate insulating film and has a sidewall.

栅极电极在栅极绝缘膜上形成，并具有侧壁。

A film gate is similar to a ring gate , but it is used for straight edges .

薄膜浇口与环状浇口相识，但使用于边缘平直的塑件。

The semiconductor device includes a substrate, a semiconductor layer, a gate insulating film and a gate electrode.

该半导体装置包括：基板、半导体层、栅极绝缘膜和栅极电极。

From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage, and the variation of threshold voltage is independent on back-gate bias.

从模型中可以容易地分析阈值电压与沟道浓度、长度、SOI硅膜层厚度以及栅氧化层厚度的关系，并且发现△V与背栅压的大小无关。

Seventh: The sol-gel method developed here for the synthesis of nanocrystalline film gate are compatible with conventional silicon planar technology, and there is no any limitation to the polarity of the film type n or p for making different kinds of nanocrystalline-film-gate-OSFET sensor. This is a very important basic work for the extending, improving and integrating of the similar devices.

七、研究开发的制备氧化物及复合氧化物纳米晶薄膜的溶胶—凝胶工艺可以实现与硅平面工艺兼容，采用该工艺可以制作不同纳米薄膜栅的OSFET新型气敏元件，薄膜的导电类型不受限制，可以是N型的，也可以是P型半导体，为该种类器件的推广和改进以及进一步的集成化创造了基础。

The invention relates to an organic thin-film transistor of three-layer composite film insulated gate which comprises a substrate (1), a metal electrode (2), a organic semiconductor layer (6), a source/leakage electrode; and also comprises: a low dielectric constant polymer layer (3), a high dielectric constant oxide layer (4), a low dielectric constant polymer layer (5), three-layer composite film insulated gate is composed of the (3) layer, the (4)layer and the (5) layer.

本发明涉及三层复合膜绝缘栅的有机薄膜晶体管，包括衬底(1)，金属电极(2)，有机半导体(6)层，源/漏电极(7)；还包括：低介电常数聚合物层(3)，高介电常数氧化物层(4)，低介电常数聚合物层(5)，所述的(3)、(4)和(5)层构成三层复合膜绝缘栅。

A gate insulating film is formed on the surface of a semiconductor substrate in an opening of a field insulating film, and thereafter a gate electrode and a capacitor lower electrode made of doped polysilicon or the like are formed on the insulating film.

本发明公开了一种半导体器件的制造方法。在场绝缘膜的开口中在半导体衬底的表面上形成栅极绝缘膜，且其后在绝缘膜上形成由掺杂的多晶硅等制成的栅电极和电容器下电极。

The tide gate and flapper gate all belong to one-way valve, and could inversed seal.

潮门、拍门均属于单向阀，能起到反向逆止作用。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。