查询词典 gate voltage

The dependences of gate efficiency and voltage amplification factor on biasing voltages and device dimensions are obtained. The expression of I—V characteristic under lower biasing voltage is also provided.

针对埋栅结构的SIT，利用镜像法计算了器件内部电场分布，给出了栅效率和电压放大因子随偏压和器件尺寸的变化关系，以及小偏压下器件I—V特性表达式。

The study results shows that the breakover phenomenon in the Ⅰ-Ⅴ characteristics of SITH is due to the continual decreasing of potential and the continual increasing of anode P-N junction bias, accordingly the high injection formed in the drifting region, which leads to the hole concentration of space charge region near the gate much higher than the ionized acceptor concentration, and the space charge region reduced and can not stand higher voltage.

论文总结得到的SITH模型一即"SIT控制的二极管"模型—对分析该器件的工作机制显示了良好的作用。

A photodiode current is amplified and converted into a differential voltage.A common-gate topology is adopted to reduce input resistance.

前置放大器将光电二极管产生的电流信号放大并转换为差分电压信号。

This test apparatus is able to measure the drain-source breakdown voltage, static drain-source on resistance, gate threshold voltage, forward transconductance and input capacitance of power MOSFET accurately, which has been applied in practice.

所设计的功率MOSFET测试仪可以进行功率MOSFET的耐压、沟道电阻、开启电压、跨导及输入结电容几个参数的精确测量，并已实用化。

Gate recess is widely used in III-V compound transistors to modify the threshold voltage and optimize the device performance through adjusting the gate to channel distance.

闸极掘入是改变闸极与电流通道的距离而使截止电压改变，进而使电晶体的表现最佳化，闸极掘入的技术已经广泛的应用在三五族半导体里。

External voltage applied to the GATE pin beyond the internal Zener voltage may damage the part.

外部电压应用到以后的内部齐纳电压门脚可能会损坏的部分。

2SK1940 Pinout: Note 3: An internal Zener at the GATE pin clamps the charge pump voltage to a typical maximum operating voltage of 26V.

2SK1940引脚说明：注3：在门脚夹电荷泵电压内部齐纳到典型的26V的最大工作电压。

When the operator presses the normally closed momentary-contact pushbutton switch, S1, current flows through R1 and R2 to ground, developing sufficient gate-to-source voltage to turn on Q1 and apply power to voltage regulator IC1 and the microprocessor.

当操作者按下常闭瞬时接触按钮开关S1，电流通过R1和R2流到地，不断提高栅源极电压到足够打开Q1和为IC1和微处理器供能。

When the operator presses the normally closed momentary-contact pushbutton switch, S1, current flows through R1 and R2 to gro und, developing sufficient gate-to-source voltage to turn on Q1 and apply power to voltage regulator IC1 and the microprocessor.

当操作者按下常闭瞬时接触按钮开关S1，电流通过R1和R2流到地，不断提高栅源极电压到足够打开Q1和为IC1和微处理器供能。

Take only half hour to complete and the gate has a 0.75mm grid spacing. Meanwhile, the influence of the voltage on the ion gate was studied. The drift tube was easily machined and assembled.

在仪器的关键部件――离子门，研制了一种成本低，制作工艺简单的离子门，该离子门相邻金属丝间距为0.75mm，同时考查了离子门处电压特性对迁移谱的影响。

Do you know, i need you to come back

你知道吗，我需要你回来

Yang yinshu、Wang xiangsheng、Li decang,The first discovery of haemaphysalis conicinna.

1〕 杨银书，王祥生，李德昌。安徽省首次发现嗜群血蜱。