查询词典 gate voltage

From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage, and the variation of threshold voltage is independent on back-gate bias.

从模型中可以容易地分析阈值电压与沟道浓度、长度、SOI硅膜层厚度以及栅氧化层厚度的关系，并且发现△V与背栅压的大小无关。

An important advantage of this system is that boththe energy level splitting and the decay rate of the DQD can be well tuned by varyingthe gate voltage.

利用双量子点冷却谐振子的优点在于，双量子点之间的能级差以及它的耗散速率都可以通过门电压来调节。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

It is showed that the varying gate voltage will change the nonlinear transconductance to get mixer function.

分析了栅压对改变非线性跨导在混频器中的作用。

This paper develops a RF analog predistorter by utilizing the gate-voltage controlled variable resistance characteristic of FET when it biased in a variable resistance zone. The predistorter also offers certain gain while linearizes the amplifier.

本文利用场效应管偏置于可变电阻区时的栅压控制变阻特性构成模拟射频预失真器，在对放大器线性化的同时还可提供一定的增益。

The experiment result shows, when extra magnetic field B=0, and supply voltage VDS is constant, inequipotential potentials VHO of the nc-Si/c-Si heterojunction MAGFET are close to zero output with increasing absolute value of the gate biased voltage VGS. Adopting gate biased voltage to compensate inequipotential potentials, compared with extra compensation resistance method, could improve magnetic sensor sensitivity, when supply voltage VDS is -1.0 V, magnetic sensitivity can be improved by 18%.

实验结果表明，当外加磁场B=0时，工作电压VDS恒定时，随栅极偏置电压VGS 绝对值增加，纳米硅/单晶硅异质结MAGFET不等位电势VHO逐渐接近零位输出；采用栅极偏置电压进行不等位电势补偿较外加补偿电阻方法可以使磁传感器灵敏度得到提高，在工作电压VDS为-1.0 V时磁灵敏度约提高18%。

Petrochemical industry Rising stem resilient gate valve majopplications API standard gate valve, globe valve and check valves; electricity sector, mainly in power stations using high-temperature pressure valve, globe valve, check valve and safety valve, and part of the low-pressure water supply and drainage valve butterfly valve, gate valve; chemical industry is mainly made of stainless steel valve, globe valve, check valve; metallurgical industry Forged steel welding gate valve mainly uses low-voltage large-diameter butterfly valve, oxygen valve and oxygen valves; urban construction department used mainly low-pressure valve, Such as urban water supply pipeline used mainly large-diameter valve, floor, blending the building of the center line butterfly valve used mainly in urban heating primarily metal sealing butterfly valve; oil pipeline used mainly flat gate valve and ball valve; the pharmaceutical industry mainly uses stainless steel ball valve; the food industry mainly uses stainless steel ball valve and so on.

石化行业主要应用API标准的闸阀、截止阀和止回阀；电力部门主要采用电站用高温压闸阀、截止阀、止回阀和安全阀及一部分给排水阀的低压蝶阀、闸阀；化工行业主要采用不锈钢闸阀、截止阀、止回阀；冶金行业主要采用低压大口径蝶阀、氧气截止阀和氧气球阀；城市建设部门主要采用低压阀，如城市自来水管道主要采用大口径闸阀，楼寓建设主要采用中线蝶阀，城市供热主要采用金属密封蝶阀；输油管线主要采用平板闸阀和球阀；制药行业主要采用不锈钢球阀；食品行业主要采用不锈钢球阀等。

It was found that gate voltage swing was 9V for MOS-HEMTs and 5.5V for MES-HFETs, respectively.

我们也发现到金氧半异质结构场效电晶体的闸极摆幅电压为9V，而金半异质结构场效电晶体则为5.5V。

A high device linearity,high transconductance over a large gate voltage swing,high current drivability are found in DH-PHEMT.

因此，DH-PHEMT器件具有更好的线性度，在较大的栅压范围内具有高的跨导和更大的电流驱动能力。

In order to bring about the spatial depth resolution of the image data obtained, the method according to the invention comprises the following steps: an electromagnetic wave is beamed onto the surface of a photonic mixed element comprising at least one pixel, the pixel having at least two light-sensitive modulation light gates Gam and Gbm and associated accumulation gates Ga and Gb; modulation light gate voltages Uam and Ubm, which are configured as Uam=Uo Um and Ubm=Uo-Um, are applied to the modulation light gates Gam and Gbm; a direct voltage, whose magnitude is at least the same as that of the total of Uo and the amplitude of the modulation voltage Um, is applied to the accumulation gates Ga and Gb; the charge carriers produced in the space charge region of the modulation light gates Gam and Gbm by the incident electromagnetic wave are subjected, as a function of the polarity of the modulation light gate voltages Uam and Ubm, to the potential gradient of a drift field and drift to the corresponding accumulation gate Ga or Gb; and the charges qa and qb which have drifted to the accumulation gates Ga and Gb, respectively, are diverted.

为了使得采用这样一种方法获得的图象数据具有空间深度分辨率，按照本发明的方法包含下述步骤：使电磁波成束在至少包含一个象素的光混合元件的表面上，该象素至少具有两个光敏调制光门G am 和G bm 以及相关的累积门G a 和G b ；将调制光门电压U am 和U bm 施加到调制光门G a 和G b 上，而调制光门电压的构成是U am=U o U m，U bm=U o -U m；将直流电压施加到累积门G a 和G b 上，而直流电压的幅度至少与U o 和调制电压U am的幅度的总和相同；使由入射电磁波在调制光门G am 和G bm 的空间电荷区中产生的载流子经受漂移场的电位梯度，并漂移到相应的累积门G a 或G b ，而电磁波是调制光门电压U am和U bm的极性的函数；已经分别漂移到累积门G a 和G b 的电荷的方向反向。

Do you know, i need you to come back

你知道吗，我需要你回来

Yang yinshu、Wang xiangsheng、Li decang,The first discovery of haemaphysalis conicinna.

1〕 杨银书，王祥生，李德昌。安徽省首次发现嗜群血蜱。