查询词典 gate voltage

Because of the existence of the superconducting gap, the normal photon-assisted tunneling process become more complicated, leading to many variations of the current between positive and negative values in I vs gate voltage Vg curve.

在正常-量子点-正常体系中，所有的 PAT 峰都为正峰，间距为 hn 。⑶由于超导能隙的存在，正常的光子协助隧穿过程将更为复杂，使得电流-栅压的关系出现多次在正负之间的变化。

NBTI effects can also be influenced by ratio of signal and vacancy. The dynamic characteristics in NBTI degradation was revealed under action of negative and positive gate voltage, degradation can be recovered by positive gate voltage stress.

在负-正-负栅压交替作用下PMOSFET器件中会呈现退化-钝化-退化的动态作用过程，正栅压作用下的PMOSFET器件特性退化会有一定程度的恢复，这是由于在正栅压作用下NBTI反应产物逆向向Si／SiO〓界面处运动从而发生钝化作用造成的。

The period of this AB oscillation of the shot noise is modulated as varying the dot level by the capacitively coupled gate voltage.

离散噪声AB振荡的周期可以通过控制量子点能级的门电压来调节。

A novel zero-voltage and zero-current resonant pole soft-switching inverter was proposed to achieve zero- voltage and zero-current switching simultaneously when main power devices turn-on and turn-off. Therefore, turn-on capacitive losses could be reduced for devices which the intrinsic capacitor value cannot be neglected. Additionally losses caused by the tail current can also be reduced, when IGBTs are used as main switches.

提出一种新型的零电压零电流谐振极型软开关逆变器，可以在主功率器件开通和关断时，同时实现零电压和零电流，因此对于内部电容不能忽略的器件，可减小容性开通损耗，当绝缘栅双极型晶体管(insulated gate bipolar transistor，IGBT)作为主功率器件时，也可减小拖尾电流引起的损耗。

Because energy distribution of interface trap is very important to study degradation of gate oxide we proposed two methods-- sub-threshold swing shift method and sub-threshold gate voltage shift method based on the relaxation spectral technique.

由于界面陷阱的能量分布在超薄栅氧化层退化研究中非常重要，因此基于弛豫谱技术我们提出了两种新的方法（亚阈摆幅漂移方法和亚阈栅电压漂移方法）来提取界面陷阱的密度及能量分布。

The gate voltage and the anode voltage parameters that could influence the performance of triode FED are analyzed and discussed.

将阴栅极板和荧光屏封装成5英寸三极结构的场致发射显示器，实现了稳定的场致电子发光显示。

The effective channel mobility of4H-SiC MOSFETs is increased significantly by high temperature anneals in nitric oxide.4H-SiC MOSFET with hydrogen postoxidation annealing has a lower threshold voltage of3.1V and a wide gate voltage operation range in which the inversion channel mobility is more than100cm 2 /Vs.

SiC的雪崩击穿电场是Si的十倍，因此，理论上SiC单极功率器件的导通电阻可以比Si器件的低400倍，但在6H-SiCMOS结构中，由于反型层的电子迁移率较小，沟道迁移率测量值仅为40～50cm2/Vs，远远低于6H-SiC的体迁移率400cm2/Vs眼1熏2演，限制了SiC功率MOSFET的导通电阻Ron。

And under constant current stress, the percentage of generated traps to N〓 is related to the increment of gate voltage to ΔV〓, that is:〓 Based on the expression:〓, the Weibull distributions of 2 different gate oxide areas are analyzed, and it is concluded that the bird beak effect caused by LOCOS process does not influence the measurement results.

而在一定的电流密度下，一段时间内电压的增量与ΔV〓的比例反映了该应力过程中产生的陷阱占整个N〓的比例：〓我们根据关系式：〓，对两种面积MOS电容的威布尔分布进行分析，得出LOCOS工艺中场氧边缘的鸟嘴效应对于测试结果的影响是可以忽略的结论。

It also demonstrated that degradation slope of Vth will become lower and reach a constant quantity. Higher Temperature and gate voltage enhanced the V〓, shift of PMOSFET. With the gate oxide growing thinner and channel length growing more lessen, the influence of NBTI effects will become more and more severity.

应力温度的升高以及负栅压应力的增大都会使器件的V〓漂移增强，而且随着器件栅长L的减小，栅氧厚度T〓减薄等使PMOSFET中的NBTI效应呈现出了增强的趋势，这使得NBTI退化有可能成为未来CMOS器件发展的严重障碍。

This method can obtain the threshold voltage,mobility of small-dimensional devices and velocity saturation factor, while the resultsobtained by this method includes the short, narrow channel effects, the degradation ofchannel mobility due to gate voltage, velocity saturation effect and the seriesresistance of source terminal.

该方法可提取出小尺寸MOS器件阈值电压、迁移率和速度饱和因子，从而反映出小尺寸器件的短、窄沟效应，迁移率退化效应，速度饱和效应及源漏电阻对器件特性的影响。

Do you know, i need you to come back

你知道吗，我需要你回来

Yang yinshu、Wang xiangsheng、Li decang,The first discovery of haemaphysalis conicinna.

1〕 杨银书，王祥生，李德昌。安徽省首次发现嗜群血蜱。