查询词典 gate of the capital city

It is learned that the city will be blocked in accordance with the combination of thinning approach, strengthen Zhuozhou City, Hebei Province, Sanhe City, such as brothers and city and county links, from "order agriculture" and "Beijing vegetables green channel" model, dredge sand and gravel production from other provinces , transport channels, from the source to curb illegal sand mining activities in the city; At the same time, city, district levels should be taken by way of a joint law enforcement, focus on time to carry out special rectification, and resolutely clamp down on illegal sand mining, illegal mixing station, component plants, to ensure the city's major construction projects, the protection of the capital of the environment.

据了解，城市会被拦截按照间伐相结合的办法，加强涿州市，河北省三河市，如兄弟和市，县的联系，从&订单农业&和&北京蔬菜绿色通道&模式，疏浚沙石生产，其他省，运输渠道，从源头上遏制非法采砂活动的城市；同时，市，区两级应采取的方式，联合执法，重点对时间进行专项整治，坚决取缔非法采砂，非法搅拌站，构件厂，以确保城市的重大建设项目，保护首都的环境。

We observe gate current by biasing the gate at fixed voltage and gate direct tunneling current will show two or three levels. The cause is carriers trapping in the trap site during tunneling through gate dielectrics and detrapping by thermal emission.

透过给一固定的闸极电压观察闸极电流，闸极直接穿隧电流会在多个层次间振动，其原因来自於电荷在穿越闸极层时，会掉进闸极层里面的缺陷并被抓住，但又容易藉著热从缺陷中散逸。

And the prince shall enter through the porch of the gate from the outside and stand by the doorpost of the gate, and the priests will prepare his burnt offering and his peace offerings, and he shall worship at the threshold of the gate; then he shall go out, but the gate shall not be shut until the evening.

46：2 王要从外面经这门的廊进入，站在门框旁边；祭司要为他预备燔祭和平安祭，他就要在门槛那里敬拜，然后出去；这门直到晚上不可关闭。

The circuits, including 4 value TTL, NOR gate and NAND gate and AND OR NOT gate and five state gate, are designed by use of bipolar transistors. They have good I/O characteristics, great load capacity and robust noise immunity, and their noise margin may reach±0.6V.

采用双极型晶体管设计出了四值TTL"或非"门、"与非"门和"与或非"门电路及五态门，这些电路均具有较好的输入输出特性、较强的负载能力和抗干扰能力，噪声容限可达到± 0 。6V。

Multiple value logic ; Discrete logic ; 4 value NOR gate ; 4 value NAND gate ; 4 value NAD OR NOT gate ; Five state gate ; DYL circuit

多值逻辑；离散逻辑；四值"或非"门；四值"与非"门；四值"与或非"门；五态门； DYL电路

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

There are four key segments in the design of the dry-dock falling gate, which have been studied in this paper: the research on the dry-dock falling gates structure design; the research on the dynamic characteristics about the dry-dock falling gate; the research on the parametric modeling of the dry-dock falling gate; the research on special simulative system of the dry-dock falling gate.

本文从四个方面对气控式干船坞卧倒门作了较深入的研究：气控式干船坞卧倒门结构设计的研究；气控式干船坞卧倒门动力学特性的研究；气控式干船坞卧倒门参数化建模的研究；气控式干船坞卧倒门专用仿真系统的研究。

The thin film transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer.

具体而言，薄膜晶体管可以包括：栅绝缘层；形成在栅绝缘层上的栅电极；形成在栅绝缘层上的沟道层；以及接触沟道层的源和漏电极。

When gating directly onto a thin wall with a sprue gate, pin point gate, or hot drop, etc., gate wells should be used to help reduce stress at the gate, aid in filling, and minimize part damage when degating.

薄壳技术 Thin-wall Technology Thin经由浇道浇口，针点浇口，二次热浇道浇口等直接进浇到薄壁，应使用浇口井，以减少浇口应力，帮助充填，并将制品在去浇口时的损毁降到最低。

The bottom of the disc is made of knife-shaped gate with a cut off function of the medium. When gate is closed , oblique plane of gate valve encounters wedge block of gate to achieve sealing effect.

闸板底部做成刀形斜面具有切断介质功能，而且闸板关闭时通过阀体上的锲块紧靠闸板斜切面使得闸板紧紧贴靠阀座密封面，从而起到了密封效果。

As of Tuesday, Google's results were still censored in China.

截至周二，谷歌的搜索结果仍受中国审查。

In order to make the positive action increase and negative one decrease, the sub-forces of the social factors must be adjusted to form a centripetal force.

在这一过程中，人的主体性发挥是社会有机体健康发展的灵魂。