查询词典 gate channel

From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage, and the variation of threshold voltage is independent on back-gate bias.

从模型中可以容易地分析阈值电压与沟道浓度、长度、SOI硅膜层厚度以及栅氧化层厚度的关系，并且发现△V与背栅压的大小无关。

Thus, the output will always be driven by a single transistor, either P- channel or N-channel. Since they are as closely matched as possible, the output resistance of the gate will always be the same, and signal behavior is therefore more predictable. Fig. 3.4 CMOS NAND gate One of the main problems with CMOS gates is their speed. They cannot operate very quickly, because of their inherent input capacitance. B-series devices help to overcome these 24 Lesson 3 CMOS Logic Circuit 25 limitations to some extent, by providing uniform output current, and by switching output states more rapidly, even if the input signals are changing more slowly. Note that we haven't gone into all of the details of CMOS gate construction here. For example, to avoid damage caused by static electricity, different manufacturers developed a number of input protection circuits to prevent input voltages from becoming too high. [3] However, these protection circuits don't affect the logical behavior of the gates, so we won't go into the details here. New Words and Phrases 1. CMOS abbr.

略语互补金属氧化物半导体(complementary metallic oxide semiconductor)逻辑，逻辑学，逻辑性，推理方法补充的，补足的，互补的电池供电的门电路，逻辑门，闸门，控制栅，大门，通道，门口，入口伏特，环骑，闪避基础的，基本的，主要的基本原则，基本原理增强型金属氧化物半导体场效应晶体管(metallic oxide semiconductor field effect transistor)反相器，反用换流器，变极器来源，水源，消息来源，原始资料，发起者源，源极排水沟，消耗，排水漏极排出，喝干，耗尽排水，流干，耗尽相同的，相配的，匹配的匹配有效地，有力地，事实上，实际上无限的东西无穷大无穷的，无限的，无数的，极大的接地的正向偏置的，正偏的或非 25 2。

However, the role of inactivation gate of sodium channel is not clear. In present study, single fibre recording in vivo from dorsal root on chronically compressed DRG model was used. We analyzed the characters of ISI series of oscillation firing of type A neurons induced by veratridine, an inhibitor of inactivation gate of sodium channel.

本研究在大鼠背根节慢性压迫模型上，利用在体单纤维记录方法，观察与分析Na通道失活门抑制剂藜芦碱引起受损背根节A类神经元放电ISI序列发生的变化特征，为了解Na通道失活门与放电型式的关系以及进一步探索放电时间型式与疼痛的关系奠定基础。

A novel lightly-doped channel approach for linearity improvement of InGaP/InGaAs pseudomorphic high-electron-mobility transistor device was presented. Light doping in the channel region of the conventional δ-doped InGaP/InGaAs PHEMT was adopted to provide a uniform and symmetric electron distribution in the channel region to achieve flat extrinsic transconductance distribution under different gate bias conditions.

本次实验在传统矽平面掺杂元件结构的通道区域中加入微量的杂质浓度掺杂，使得电子在元件通道层中的分布更为均匀及对称，以期望在不同的闸极偏压条件下得到较为平坦的转导值分布曲线，改善磷化铟镓/砷化铟镓假晶式高电子迁移率电晶体的线性度表现。

The thin film transistor may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer.

本发明公开了一种薄膜晶体管及其制造方法，该薄膜晶体管可以包括沟道层、源电极、漏电极、保护层、栅电极、和/或栅极绝缘层。

Second, as the gate channel length decreases, the switching time of each gate will decrease.

第二，当门的沟道长度减小时，门的开关时间会减少。

The gate insulating layer may be interposed between the gate electrode and the channel layer.

栅极绝缘层可以夹置在栅电极和沟道层之间。

The effects of DMSG structure on channel electrostatic potential and channel potential is taken into account, and the relation between the length of control gate and the short channel effects is analyzed.

模型考虑了异质围栅结构对沟道表面势和沟道势垒高度的影响，分析了控制栅长度与器件短沟道效应之间的关系。

The thin film transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer.

具体而言，薄膜晶体管可以包括：栅绝缘层；形成在栅绝缘层上的栅电极；形成在栅绝缘层上的沟道层；以及接触沟道层的源和漏电极。

Antinociception and VGSC-modulation of BmK IT2 and BmK AS—1. The results from nociceptive flexion reflex and plantar radiation heat showed: BmK IT2 (a depressant insect-selective neurotoixn) and BmK AS-1 (a new-type β-1ike neurotoxin) have significant antinociceptive effects on rat peripheral nerve system. The antinociceptive effects of BmK IT2 on the carrageenan-inflamed rats were significantly stronger than those on the normal rats. Whole-cell patch-clamping showed: Both TTX-S and TTX-R Na〓 currents induced from rat DRG neurons were significantly inhibited by BmK IT2 and BmK AS—1, and BmK IT2 was more sensitive to TTX-R than TTX-S component. All the results suggested: the peripheral antinociception of BmK IT2 and BmK AS—1 might be attributed to the inhibitory effects of them on the TTX-S and TTX-R Na〓 channel located on the peripheral ends of rat DRG neurons with small diameter.

中文题名特异性钠通道调制剂－长链蝎神经毒素的药理功能研究副题名外文题名 The study of pharmacological function of the specific modulators on voltage-gate Na+ channel-long chain scorpion neurotoxin 论文作者谭智勇导师吉永华研究员学科专业生理学研究领域\研究方向学位级别博士学位授予单位中国科学院上海生命科学研究院学位授予日期2002 论文页码总数93页关键词神经毒素毒理学电压门控钠通道东亚钳蝎钠通道调制剂馆藏号BSLW /2003 /R338 /22 本论文工作利用细胞和行为药理技术系统地研究了东亚钳蝎长链神经毒素的抗伤害性效应、对电压门控钠通道的电生理调制作用、改变胞内离子浓度的效应，并分析了相关的药理功能机制。

Neither the killing of Mr Zarqawi nor any breakthrough on the political front will stop the insurgency and the fratricidal murders in their tracks.

在对危险的南部地区访问时，他斥责什叶派民兵领导人对中央集权的挑衅行为。

In fact,I've got him on the satellite mobile right now.

实际上 我们已接通卫星可视电话了