查询词典 gap-toothed

In order to adjusting plate electrization, some servo-motors replacing mechanism as actuator were installed in the gap of the plate cylinder.

在印版滚筒的空当安装伺服电机作为执行机构来代替机械部分的动作，以实现调整印版的电气化

In order to adjusting plate electrization,some servo-motors replacing mechanism as actuator were installed in the gap of the plate cylinder.

在印版滚筒的空当安装伺服电机作为执行机构来代替机械部分的动作，以实现调整印版的电气化；通过光电头自动检测套印误差，并将误差信息反馈给伺服放大器，构成闭环控制系统。

The action of micro gap flow on the electrohydraulic ...

运用该试验系统进行了初步的平面配流副油膜试验。

In Foucault's experiments, a geared-up copper wheel was rotated in the gap of an electromagnet.

在福柯的实验，面向行动的铜轮是在旋转的差距电磁铁。

These parameters include energy gap, electron affinity and build-up potential etc.

这些典型参数包括：禁带宽度、电子亲和能、内建势等。

The usually used electron-transporting materials have disadvantages.They can be easily formed crystal,have lower electron affinity,a narrow gap and difficult to limit the complex exciton to the luminescence layer,all of these disadvantages limit,their application.

有机电致发光材料中常用的电子传输材料容易结晶和低的电子亲和性限制了它的应用；并且能隙较窄，难以将复合激子限制在发光层。

Silicon carbide is a promising semiconductor with wide band-gap, high saturation electron drift velocity, high breakdown electric field and high thermal conductivity.

碳化硅是一种新型半导体材料，具有禁带宽、电子饱和迁移速度高、击穿电场强度高、热导率高等特点。

High-frequency and high power electronic or microwave devices, because of their excellent properties such as wide band gap, high electron saturation drift velocity, low dielectric constant, high thermal conductivity, good chemical and thermal stability, and so on.

同时由于GaN基材料具有电子漂移饱和速度高、介电常数小、导热性能好、化学和热稳定性好等特点，也非常适合于制作高温、高频及大功率电子器件。

The transport and current-voltage properties of submicron GaAs MESFET device are calculated firstly based on the nonparabolic effective mass energy band model and Monte Carlo method which includes all major scattering mechanisms. The electron drift velocity, electric field and the non-homogeneity of mobility distribution in device are obtained. The influences of different gate lengths to electron drift velocity and drain current are analyzed.

根据对以GaAs、GaP和InP为主的Ⅲ-V族化合物半导体材料的能带结构和散射机制的分析，采用蒙特卡罗模拟方法，研究了亚微米尺寸的OaAs MESFET器件的电子密度分布、电场强度、漂移速度和迁移率分布等输运性质，以及栅长对器件性质的影响和电流电压特性。

The experimental data also shows that the energy gap for electron transition of acetic acid molecules does not change in various molecular associations.

实验数据还表明：不同的分子缔合结构并不改变乙酸分子中的电子跃迁能级间隔。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。