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Finally, the growth mechanism of GaN nanowires is discussed briefly.

最后，简单讨论了GaN纳米线的生长机制。

It is the first time that cubic GaN films were achieved at such a high Ⅴ/Ⅲ rate.

这是第一次在高Ⅴ/Ⅲ比下得到立方GaN。

In this thesis, the AlN thin films were deposited on SiO2/Si and GaN/Sapphire substrates respectively for layered structure SAW devices by Helicon sputtering system. Laser ultrasound system was used to measure the acoustic wave velocity of AlN/SiO2/Si layered structure. Frequency response and insertion loss were measured by an HP8510C vector network analyzer to analysis insertion loss, sidelobe and quality factor. The results showed the possibility of incorporating thin films SAW devices with other semiconductor devices.

本研究使用回旋溅镀系统分别在SiO2/Si、GaN/Sapphire两种基板上沉积AlN并制作层状表面声波元件，并利用雷射超音波系统量测AlN/SiO2/Si结构之表面波速及机电耦合系数，再利用网路分析仪量测其频率响应，分析其插入耗损、 sidelobe、品质因子Q，以比较不同基材所制作之层状表面声波元件之特性，此研究成果初步验证AlN层状表面声波元件与半导体元件整合之可行性。

On Si (100) substrates hexagonal GaN films were obtained.

对在Si（111）、Si（100）和SOI柔性衬底上的GaN生长进行了研究。

Because the magneto-optical recording density isin inverse proportion to the square of wavelength,and the GaN-based diode ina blue light range is at the stage of practical usage,it is very important to studythe magneto-optical materials in a blue light range.

由于磁光记录密度反比于光波长的平方，而且目前以GaN为基的蓝光二极管已经实用化，从而研究蓝光波段的磁光材料十分重要，这点是本论文的主要出发点。

In recent years, SiC FET power transistor and GaN high electron movability power transistor represent the third generation semiconductor-wide bandgap semiconductor power devices, have advantages of high breakdown voltage, high power density, as well as high output power, high operation efficiency, high operation frequency, wide instant aneous bandwidth, operation in high temperature environment and strong ability of resisting radiation.

近年来以SiC场效应功率晶体管和GaN高电子迁移率功率晶体管为代表的第三代半导体－宽禁带半导体功率器件具有击穿电压高、功率密度高、输出功率高、工作效率高、工作频率高、瞬时带宽宽、适合在高温环境下工作和抗辐射能力强等优点。

R-plane sapphire is usually used as a substrate for growing nonpolar (1120) a-plane GaN film.

r面(0112)蓝宝石晶体可用作制备非极性GaN薄膜的衬底。

In various applications, improved ohmic contacts to GaN are required.

对于各种应用来说，需要改进GaN的欧姆接触。

Low resistance ohmic contacts are essential for improving the electrical and optical performance of GaN-based devices.

低阻欧姆接触是提高GaN基器件光电性能的关键。

Three transmission line model methods are adopted to measure the specific contact resistivity of the ohmic contacts on p-GaN.

采用多种传输线模型方法，测量了p型GaN上的欧姆接触的比接触电阻率。

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失