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Considering the mechanical and electrical boundary conditions of AlN/GaN structures, determinantal equation which is used to solve the phase velocity of surface acoustic wave is given from the basic principle of matrix methods.

从矩阵方法的基本原理出发，结合AlN/GaN结构的机械和电学边界条件，推导出用于求解声表面波在AlN/GaN结构中的相速的行列式方程。

The X-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180" and 185" for (0002) symmetric reflection and (10 12) skew reflection,respectively.A room temperature mobility of 850cm2/ is obtained for a 3μm thick GaN film.

GaN材料的X射线双晶衍射摇摆曲线(0 0 0 2 )对称衍射和(10 12 )斜对称衍射半宽分别为 180"和 185"；3μm厚GaN薄膜室温电子迁移率达到85 0cm2 /。

Epitaxial AlN films have been successfully deposited on GaN/Sapphire substrates at low-temperature (300℃) using Helicon sputtering system.

本研究之目的是在GaN/Sapphire基板上低温成长AlN的磊晶薄膜，并探讨各种溅镀条件对AlN薄膜品质的影响，以及研究AlN/GaN介面所感应之二维电子气现象，证实介面间受极化效应感应产生的二维电子气确实存在。

This dissertation mainly focused on the growth and characterization of GaN based materials grown by radio frequency plasma assisted molecular beam epitaxy. Some of the devices related technics, such as etching and ohmic contact, were also discussed.

本文研究了GaN和AlGaN/GaN材料的射频等离子体分子束外延生长及其特性，并对相关器件工艺中的若干重要问题如刻蚀、欧姆接触等，进行了初步探索。

The direct calculation of the GaN/AlN super cell demonstrated that the GaN/AlN heterojunction was homotype and changed abruptly at the interface.

另外，通过使用常用的平均键能法、平均势法和芯态法三种近似方法对GaN/AlN带阶的计算，比较得出，超原胞法虽然计算量较大，但能够给出异质结界面附近更为详细的信息，这一点其他三种近似方法无法得到，但他们也能够得出与实验值基本一致的带阶参数。

The results indicated that the nitridation condition obviously influenced the photoluminescence properties and electric parameters of GaN films.

研究表明，GaN低温缓冲层生长之前的氮化衬底工艺对GaN外延层表面形貌、发光性能、电学性能有显著影响。

After 1990, the realization of some pivotally technieal methods and the development of materials growth and devices technics made GaN to be the research focus of the world.

进入90年代之后，随着材料生长和器件工艺水平的不断发展和完善，一些突破性技术的实现使GaN材料的研究空前活跃，GaN己经成为世界各国争相研究的热点。

However, this usefulness of GaN for optoelectronic devices seens to be limited by the fact that the defficulty in obtaining p-type material is to grow crystals by admixing GaP to GaN. As will known, GaP with n- or p-type conductivity can be easily obtained by suitable doping. Thus, it might be possible to get n- and p-type GaP_(1-x)N_x or GaAa_(1-xN_x crystals above some critical P content of the alloy system.

把两种或两种以上材料组合起来实现优异性能材料的方法是一种经常使用并行之有效的方法，本论文就是对GaP、GaAs与GaN形成合金系GaP_(1-x)N_x和GaAs_(1-x)N_x进行基础性研究的结果，人们预测这种合金系的禁带宽度应在磷化镓的2.261eV(或砷化镓的1.43eV)到氮化镓的3.39eV之间，如果能制成上述合金系则是很有意义的，它是很有希望的蓝色发光材料。

It was found that GaN epilayer evolved from separate islands to coalesced film.

形貌观察发现GaN外延层由分离的岛转化为连续的膜，形貌的发展显示GaN经历了横向生长的阶段。

Precise measurement and control of GaN-film thickness is very important for GaN-based materials epitaxy and devices fabrication.

在GaN基材料外延和器件制作中，对外延膜厚度的精确测量和控制至关重要。

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失