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High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth.

采用侧向外延方法，在制作了条形掩膜图形的GaN衬底上用MOCVD生长高质量GaN。

They are the easy nitridation of Si surface and the poor wetting properties of GaN on Si substrate.

采用低温生长GaN缓冲层，随后进行高温GaN生长的&两步生长法&，对Si上GaN的生长进行了深入系统的研究。

After 1990, the realization of some pivotally technical methods and the development of materials growth and devices technics made GaN to be the research focus of the world.

采用上述方法制备GaN，工艺复杂，设备昂贵，限制了GaN材料的制备、生产和应用。现在，国际上有许多科研机构正在探索新的工艺方法，试图在合适的衬底上制备高质量的GaN薄膜。

The growth mechanism of these GaN nanomaterials was proposed and discussed based on the investigation of the influence of the ammoniating temperature, ammoniating time and the Nb films'thickness on the properties of GaN nanosmaterials.

通过研究不同生长条件对制备一维GaN纳米材料的影响，初步提出并探讨了采用此方法合成一维GaN纳米材料的生长机制。

To gain the high-guality GaN nanostructure,GaN nanowires were successfully prepared on the Si(111) substrates through ammoniating Ga2O3/ V thin films deposited by magnetron sputtering.

为了制备高质量的GaN纳米结构，采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜，然后在流动的氨气中进行氨化反应，成功制备出GaN纳米线。

To gain the high-guality GaN nanostructure,GaN nanowire s were successfully prepared on the Si(111) substrates through ammoniating Ga2O3/V thin films deposited by magnetron sputtering.

为了制备高质量的GaN纳米结构，采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜，然后在流动的氨气中进行氨化反应，成功制备出GaN 纳米线。

Then GaN nanostructured thin films comprised of regular hexagonal crystal grains have been successfully synthesized by ammoniating Ga2O3 films at the temperature of 850℃ for 15 rain in a quartz tube. X -ray diffraction reveals that the synthesized GaN is of a hexagonal wurtzite structure with lattice constants a =0.318 nm and c =0.518 nm.

然后将硅基Ga2O3置于管武石英炉中，在850℃的氨化温度下氨化15min后，成功制备出GaN薄膜，该薄膜由正六边形的晶粒组成。X射线衍射表明GaN具有六方纤锌矿结构，晶格常数为a=0.318nm和c=0.518nm.X射线光电子能谱的测试确定了样品中Ga-N键的形成，并且Ga和N的化学计量比为1：1。

For example, light emitting diodes and lasers using InGaN/GaN and AlGaN/GaN heterostructures have already been demonstrated.

例如应用于InGaN/GaN和AlGaN/GaN异质结的发光二极管和激光二极管已经开发成功。

For example, light emitting diodes and lasers using InGaN/GaN and AlGaN/GaN het

例如应用于InGaN/GaN和AlGaN/GaN异质结的发光二极管和激光二极管已经开发成功。

The orientation tiltings were suggested to be one of the inportant mechanisms by which GaN films could match better with Al2O3(0001) substrates and relax the interfacial strain effectively.

GaN绕〈1120〉晶带轴倾斜的匹配方式是其外延生长过程中降低和Al2O3(0001)的晶格失配、释放界面应变的重要机制之一。标签 GaN Al2O3(0001)衬底 MOCVD 晶格匹配 GaN Al2O3(0001) substrate MOCVD lattice matching

As she looked at Warrington's manly face, and dark, melancholy eyes, she had settled in her mind that he must have been the victim of an unhappy attachment.

每逢看到沃林顿那刚毅的脸，那乌黑、忧郁的眼睛，她便会相信，他一定作过不幸的爱情的受害者。

Maybe they'll disappear into a pothole.

也许他们将在壶穴里消失