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gallium arsenide相关的网络例句

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"Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."

常用的本质半导体是硅、锗以及砷化镓等的单晶。

Effect of residual gas on emission property of gallium arsenide cathode in vacuum.

徐江涛。真空残气对GaAs阴极发射性能的影响。

New productis produced on - technology with the observance of production standards 110- nm process (it is important to note that Staccato was possible to manage without the application of a gallium arsenide for high-frequency units).

新产品是生产技术-技术与遵守生产标准1 10-纳米工艺(重要的是要注意到,方佳是可能的管理不适用的砷化镓高频单位)。

In 2000, T. Dietl utilized theoretical simulation to be contrasted with the experimental, and he found the manganese doped gallium arsenide were identical, and derive other magnetic characteristics in its relevant semiconductor materials.

在2000年T。 Dietl 等人利用理论的模拟计算和实验的对照,发现在砷化镓参杂锰元素的吻合,并推导其他相关的半导体材料在其磁性方面的特性。

Such as IBM, General Electric and Hewlett Packard, also frequently break away and form their own small companies to develop, produce and market new advanced products, services and technologies, such as the gallium arsenide high-speed semi-conductor as a replacement for silicon.

大公司的员工,(如IBM,通用电气,惠普),经常地跳槽成立自己的公司,开发,生产,销售新的,先进的产品,服务和技术,例如嫁砷化合物高速半导体作为硅的替代物。

In addition, silicon-germanium is a less expensive material than the compound semiconductors such as gallium arsenide or indium phosphide that have long been used in radar systems.

此外,硅锗是一种不太昂贵的材料比化合物半导体,如砷化镓或磷化铟,长期被用于雷达系统。

The photocathode is coated with sensitive gallium arsenide, which allows for a more efficient conversion of light to electrical energy at extremely low levels of light.

其表面镀上一层很敏感的砷化镓光电阴极涂层,,在极弱光线下它能使光更有效的转化为电能。

Silicon-germanium amplifiers can only produce about one watt of radio frequency power, versus 10 watts from a typical gallium arsenide device.

硅锗放大器只能生产约1瓦特的射频功率,与10瓦的一个典型的砷化镓器件。

New base materials for integrated circuits, such as composite layers of gallium arsenide and gallium aluminum arsenide, may contribute to faster chips.

为像含有种种要素数层的金家砷化物和金家铝砷化物这样的集成电路的新基础材料,可能成为较快速的薯条因素。

A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers,and the main contamination was gallium arsenide particles in suspension.

砷化镓晶片生产过程中,产生大量废水,其中主要污染物是悬浮状态的砷化镓微粒。

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这一模式非常关注商人的网络信用基础。

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