查询词典 forward-biased

When the diode is forward biased, electrons are able to recombine with holes and energy is released in the form of light. This effect is called electroluminescence and the color of the light is determined by the energy gap of the semiconductor.

随着成长，他也会拥有一个可以盛放自己秘密和隐私的地方，也许是抽屉（但在当今社会更可能是电脑）或许还是房间……但抽屉的概念依然存在；广义的讲，每个人都可以比作是一个"抽屉"。

When the sensor is forward biased at a current of 2 mA, the range of positive temperature coefficient of the sensor resistance is extended up to +300 C as a result of the minority current discontinuity and majority carrier injection.

当传感器在2mA的正向偏置电流下，由于少数载流子的不连续性以及多数载流子的注入，传感器电阻的正温度系数区拓宽到573K（＋300℃）以上。

If the input voltage deviates from this range by more than 0.6V in either direction, one of the diodes is forward biased and a latch-up may occur.

如果输入电压向任一方向偏离这个范围多于其中的一个二极管将会正向偏压，并且会关闭这个引脚。

The saturable absorption and bistability are observed and based on this phenomenon, a new mode-locking scheme of modulating the saturable absorption section with RF signal forward and reverse biased respectively is proposed.

观察到了饱和吸收以及双稳现象，并据此提出了利用正/反向调制饱和吸收区的方法实现光纤光栅外腔激光器锁模调制的新机制。

It pretty much has to, as the operating current for both stages is the same, the series resistance is only trivially different compared to the forward biased input impedance of a triode grid (10's of K's for the typical duotriode input), and the voltage divider ratio difference between 100/10K and 470/100K is 0.990099 versus 0.995322, an inaudible amplitude difference.

相当有作为的经营现为两个阶段是相同的，一系列的阻力，只是没有太大的不同，相对于前进偏颇输入阻抗三极管一格(10年代K的对典型duotriode投入)，该分压器比例相差100/10k和470/100k是0.9900990.995322versus，inaudible幅度差。

Normal working hours, B2-B1 between the need to add a positive voltage, E-B1 between the PN junction forward biased if the Canadian single-junction transistors that turn, after turn-on, E-B1 between the resistance will soon be reduced, to B2-B1 between the current rapid increase in current increase, so that the resistance between the E-B1 further reduced, so the formation of a strong positive feedback.

正常工作时，B2—B1间需加正电压，E—B1间的 PN结若加正向偏置，单结晶体管即导通，导通后，E—B1间的电阻会很快降低，使B2—B1间的电流迅速增加，电流的增加，又使E—B1间的电阻更进一步的减小，如此形成了强烈的正反馈。

You can almost always determine the leads of a bipolar transistor with an ohm meter. b-e and b-c junctions will measure like a diode with the b-c junction reading slightly lower than the b-e junction when forward biased.

你几乎总是可以用欧姆表来判断双极性晶体管的脚位。b-e结和b-c结将像二级管那样测量，而且正向偏置时，b-c结的读数稍微比b-e结低一点。

B-e and b-c junctions will measure like a diode with the b-c junction reading slightly lower than the b-e junction when forward biased.

发射结和集电结跟二极管差不多，集电结正向偏置时的读数要稍小于发射结。

The I-V characteristics of the diodes with 100μm diameter indicated that as the densities of V-defects on GaN films increased from 4.1×105cm-2 to 1.03×107cm-2, the Schottky barrier height decreased from 1.44eV to 1.19eV and the reverse bias leakage current at -1V is increased sharply from 10-10A to 10-7A . Further studies on a single V-defect using conductive atomic force microscope demonstrated that the value of forward current biased at 8V at V-defect side-walls appears to be one order higher than that of plain region, indicating that the conductivity mainly occurred at the side-walls of V-defect.

实验结果发现，随著V型缺陷密度由4.1×105cm-2增加至1.03×107cm-2，在氮化镓表面蒸镀镍金属所制成直径为100μm的萧基元件之所属能障从1.44eV下降至1.19eV，而且在-1V的操作下反向偏压漏电流从10-10A急遽的攀升至10-7A；为了了解V型缺陷对厘米尺寸n-GaN萧基元件电流传导机制之影响，我们进一步的利用导电原子力显微镜(Conductive Atomic Force Microscopy， C-AFM)，特别针对单一个V型缺陷进行微观电性之量测。

Due to forward-bias-induced annealing effects,the laser diode biased during irradiation is less degraded than that short-circuited,and annealing curves can be fitted sectionally with different annealing rates.

激光二极管辐射损伤存在着正向偏置退火效应，FP和DFB结构的二极管具有相似的加电退火规律，均可拟合成指数衰减形式，退火曲线可以分成退火常数不同的几段进行拟合。

The witness also told the jury at the Royal Courts of Justice in London that he saw a paparazzo fighting with a member of the public who was trying to stop him taking pictures in the minutes before the emergency services arrived.

他还告诉在伦敦皇家法庭的陪审团，在急救服务到来之前，他当时看见一个狗仔队正和一群阻止他拍照的人打架。

The entire N／C program on a tape is made up of an accumulation of these successive data blocks.

纸带上的整个数控程序由这些连续数据单元连接而成。