查询词典 forward-biased

The Reverse Biased SOA applies when switching off a clamped inductive load, including the turn-off from a short circuit condition.

反向偏颇国家海洋局适用时关掉两端感性负载，其中包括把小康从一个短路的情况。

The high efficiency and high power semiconductor laser with multi-active regions which are cascaded by reverse biased tunnel junction has a higher inner quantum efficiency which can larger than 1, so that it can output higher optical power at the same injected current compared with the normal lasers, meanwhile, it can be designed to large coupled optical cavity, so it will increase the limit of the electro-thermal destroy and the COD.

通过反向偏置隧道结将多个有源区级联起来的多有源区耦合大光腔高效大功率半导体激光器从理论上解决了传统激光器存在的问题，由于其内量子效率大于1，可以在相同电流下输出高的光功率，且可以制成耦合大光腔结构，增大了光腔面积，因此相对于传统激光器而言，其电热烧毁和COD水平都会提高。

The shock line is a nearly continuous high-impedance transmission line loaded at the same small spacings by reverse biased varactor diodes.

激振线是一个近连续线的高阻抗微带传输线，反偏压的变容二极管以相同的小间隔加载到传输线，输入激励是一个下降沿的负脉冲。

Other related studies showed that the hot carrier effect existed a transition point, which reversed the dependence of MOSFETs' Ib to temperature. This finding was proved with the peak substrate current would reverse its temperature dependence when biased drain voltage Vd across the transition point.

其他的研究指出，热载子的效应存在著转位点，我们把电晶体闸极偏压在基板电流的最大值，汲极偏压在转位点的上下，会造成基板电流与温度效应之间的关系反转。

The CTIA has a charge-voltage conversion gain of 1.6μV/e~- and helps the Nwell/Psub photodiode to achieve a dark current of 300 fA(3 nA/cm~2) with 300 mV reverse biased voltage.

所采用的改进CTIA结构读出电路功能正确，电荷-电压转换增益为1.6μV/e~-，这种结构令Nwell/Psub光电二极管在300 mV反向偏压条件下，暗电流仅为300fA(3 nA/cm~2)。

The anode structure of CI-LIGBT is optimized by numerical simulation, and it is pointed out that segmented p〓 anode region surrounded by n〓 anode region is the key to improve the ability of current limiting, and the more deeper the n〓 anode junction relative to the p〓 anode junction, the more powerful the ability of current limiting is. The affection of the breakdown voltage BV〓 of the reverse biased p〓n〓 junction and the sample resistance upon the latching current, the latching voltage and the on-state voltage have been studied, and it is indicated that the tradeoff between the on-state voltage and the latching characteristics is the excellentest when BV〓 is 1. 1V so that its on-state voltage can be just only 0.6V higher than conventional LIGBT. It is also found that this device is especially suit to high temperature environment. Based on X. B. Chen's surface voltage sustaining structure using optimized variational lateral doping and Ludikhuize's multiple floating rings structure, high voltage LIGBT and is studied in this paper.

通过数值模拟，优化了CI-LIGBT的阳极区结构，指出采用被n〓阳极区包围的单元状p〓阳极区是提高该器件限流能力的关键，而n〓阳极区结深相对p〓阳极区结深越大，器件的限流能力越强；分析了反偏p〓n〓结击穿电压BV〓和取样电阻对器件闩锁电压、闩锁电流和导通压降的影响，得出BV〓在1.1V时器件导通压降和抗闩锁能力间的折衷关系最优，其导通压降仅比普通LIGBT高0.6V；分析了温度对LIGBT闩锁性能的影响，表明CI-LIGBT即使在450K的高温下也不会闩锁，尤其适用于高温工作环境。

OK, Roach is biased. He's also right.

看来，罗奇有些偏见，不过也是对的。

It is important to use rounding methods carefully in order that biased errors do not occur.

重要的是要使用四舍五入的方法，以便仔细偏颇错误不会发生。

Second, traditional management theory,with its bureaucratic roots, is heavily biased toward standardization and routinization

其次，传统的管理理论，拥有它的官僚本质，而对於标准化与惯例化存在著沉重的偏见。

A charge pump phase locked loop based on self biased technique is presented. In this technique, the operating bias levels are essentially established by the operating frequency of the voltage controlled oscillator, namely, all bias voltages and currents are determined by VCO controlling voltage. Thus, a fixed damping factor and a fixed ratio of the bandwidth to operating frequency are obtained, which are defined by th...

给出了基于自偏置技术的电荷泵锁相环电路，压控振荡器的工作频率动态地建立了电路内部所有的偏置电压和电流，从而实现了固定衰减因子，固定环路带宽与工作频率之比，这二者由电容的比率决定，极大地实现了电路设计的工艺无关性，同时也得到了小的相位抖动，最后，对这种锁相环的稳定性进行了一定的分析。

"Yes, now you can give yourself airs," she said, you have got what you wanted.

"对了，您现在高兴了，"她说道，这是您所期待的。

Then the LORD said to me: Rebel Israel is inwardly more just than traitorous Judah.

上主于是对我说：＂失节的以色列比失信的犹大，更显得正义。