查询词典 flip chip

In this paper, the bump patterns for flip-chip packages are discussed first, then an experiment is setup to study the dispensing phenomena for different bump patterns, and the CAE software is used to analyze and identify with experiment mutually. From these thorough comparisons and analytical analysis, the existence of channel could slow down the flow, the high density of bump could speed up the flow, and it could avoid the air trap by modified the bump and channel's arrangement on flip-chip package. Then flows in rectangular microchannels driven by capillary force and gravity are discussed; furthermore, the theoretical model of flow in microchannel driven by capillary force and gravity is formulated from the Navier-Stokes equations.

本文首先针对覆晶底部充填进行相关理论推导、实验与模拟，探讨不同凸块配置模型所造成的波前不平滑现象对底部充填流动的影响；即依据相关参数建立模型进行底部充填实验，同时以CAE(Computer-Aided Engineering)模流分析软体进行模拟，在完成理论探讨、实验与模拟分析之后，交叉比较理论、实验与模拟分析结果，归纳出影响底胶充填流动之因素，由结果显示在凸块密集度较高的区域，凸块可以帮助流动，但是在凸块区后方的沟槽区域则因为凸块区所提供之流量不足，所以会造成波前落后的现象，另外藉由修改凸块与沟槽配置的关系，可以有效的控制波前形状的变化情形，避免产生包风现象。

Bumps growth on alumina substrate side and gallium arsenide chip side were processed and discussed as well as the flip-chip bonding process.

本实验尝试以不同尺寸大小的共平面波导传输线，配合凸块位置的分布，研究其在高频下的S参数表现。

A coplanar transmission line structure on GaAs chip were mounted on a RO3210 substrate using flip chip Au-to-Au thermal compression method.

设计在 GaAs 晶片上的CPW 传输线成功地以热压法与 RO3210 基板做覆晶结合。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

In this paper, the duplex solder joints geometry of flip chip is simulated by Surface Evolver program.

摘 要：本文采用 Surface Evolver 软件对倒装焊复合焊点的几何形态进行了模拟。

Underfill technology has been used to minimize the mismatch of the Coefficient of Thermal Expansion in flip chip technology.

底层填充技术应用于倒装芯片热膨胀系数配合的最小化，它也被扩展应用到增加CSP(Chip Scale Package 芯片级封装)的机械强度。

And research shows that high thermal conductivity composite can decrease the temperature difference of underfill between chip and substrate, so that it can improve the temperature distribution of the flip chip, decrease the thermal stress of underfill and increase packaging reliability.

表明高导热系数的底充胶可明显降低在芯片和基板之间的温度差，降低底充胶的热应力，进而提高电子封装的可靠性。

Capillary phenomena was studied and discussed by the scholars about 200 years ago, but the progress was slow due to the limited equipments and manufacture precision of the microchannel.In recent years, because of the rapid development of MEMS and micromachining, many applications of the capillary flow is widely developing in some modern processes, such as underfilling of flip chip, flow in microfluidic chip or biochip, and a variety of other fields.

摘要 毛细现象大约在200年前便断断续续被欧美学者所研究讨论，但由於当时微细加工受到仪器设备和制造精度的限制，因此发展极为缓慢；近年来由於微机电系统与微细加工之精进，许多具有微流道的应用设备，陆续被制作问世，加上光学显微镜与影像撷取设备的普遍，对於研究此课题的推展极有助益；且随著微生医、覆晶底胶充填与微流体系统等领域之受到重视，毛细现象导致的充填问题、驱动原理及液体流动的控制，都变得相当的重要；本研究基於如此的动机与目的，进行微流道内液体之毛细流动现象及时间的探讨。

On the basis of the summarization of MCM-Cs main features and its assembly and packaging technologies, the paper puts stress on relatively deepgoing studies in practically advanced MCM-C assembly process technologies as gold ball wire bonding, IC chip gold ball stud bump making, IC flip chip bonding and underfilling, in high reliability MCM-C packaging process technologies as integral LTCC substrate packaging, hermetically metal sealing, and also in the basic technological process of MCM-C assembly and packaging. Later on, it presents the effectively engineering development of two high level actual module products--a high-density monolithic processor system MCM-C , a high-speed data collecting and processing system MCM-C. Lastly, it briefly introduces various common methods of quality inspection and reliability test of MCM-C assembly and packaging in engineering practice.

论文在综述MCM-C的主要特点及其组装封装技术的基础上，重点对金丝球引线键合、IC芯片金球凸点制作、IC芯片倒装焊与下填充等实用先进MCM-C组装工艺技术和LTCC基板与外壳及PGA引线的一体化封装、气密性金属封装等高可靠MCM-C封装工艺技术以及MCM-C组装封装基本工艺流程展开了较深入的研究，有效完成了高密度单片机系统MCM-C和高速数据采集控制系统MCM-C等两种高水平实际产品的工程化研制工作，扼要介绍了工程实践中MCM-C组装封装工艺常用的质量检验方法和可靠性试验方法。

Encapsulant was driven by capillary force into the space between the chip and substrate. Underfill technique can protect the electrical device and prevent the device from destroying because of external force. Underfill has many defects including the fill time is too long, the situation of short shot and air trap are caused easily, the yield of product of Flip-Chip is not highest and the products are universal. Therefore, there are many factors being studied in this paper to sum up the influence of underfill of Flip-Chip process cause by model parameters.

覆晶接合技术为先进电子讯号连接技术中的一种，具有高I/O数、电子讯号路径短以及尺寸小等优点，而采用覆晶接合之电子元件大部分均以底部充填技术进行封装；底部充填是一种以毛细作用为驱动力在晶片与基板之间的间隙充填底胶的封装技术，可以确保晶片不受到外力的影响而损及封装体，但此技术具有充填时间长、容易产生短射与包风等缺点，使得覆晶封装制程良率不高，间接影响覆晶封装产品的普及率，因此本文将依各种可能之参数模型对覆晶封装底部充填制程的影响，以供业界参考。

The absorption and distribution of chromium were studied in ryeusing nutrient culture technique and pot experiment.

采用不同浓度K2CrO4(0，0.4，0.8和1.2 mmol/L)的Hoagland营养液处理黑麦幼苗，测定铬在黑麦体内的亚细胞分布、铬化学形态及不同部位的积累。

By analyzing theory foundation of mathematical morphology in the digital image processing, researching morphology arithmetic of the binary Image, discussing two basic forms for the least structure element: dilation and erosion.

通过分析数学形态学在图像中的理论基础，研究二值图像的形态分析算法，探讨最小结构元素的两种基本形态：膨胀和腐蚀；分析了数学形态学复杂算法的基本原理，把数学形态学的部分并行处理理念引入到家实际应用中。