查询词典 film gate

Several common degradation phenomena were summarized from some recent typical research work on the reliability of low-temperature processed poly-silicon thin film transistors, which includes self-heating, hot carriers and negative gate bias temperature instability. Degradation mechanisms and models are presented as well as conclusions of their influences on various device parameters and typical stress conditions.

结合近几年来国际上对于低温多晶硅薄膜晶体管器件可命性开展的一些有代表性的研究工作，对其中几种常见的退化现象：自加热、热载流子和负偏置温度不稳定性做了分析和归纳，介绍了其退化机制及退化模型，并总结了它们在一般情况下对器件性能的影响及各自的典型应力条件。

As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

接着我们把掺氮ZnO薄膜作为沟道层材料，用Si3N4做栅绝缘层在非晶玻璃上制备了ZnO基薄膜晶体管，ZnO-TFT器件表现出了典型的场效应晶体管的输出特性。

The degradation and breakdown of thin gate oxide film are related with the generation of traps in oxide layer.

摘 要：薄栅氧化层的退化、击穿与氧化层中和界面陷阱的产生相关。

It is thus possible to prevent a thinning phenomenon in which a gate oxide film is made thin.

因此可以防止使栅极氧化膜变薄的减薄现象。

As a result, a breakdown voltage of an oxide film, which occurs in the gate oxide film, can be prevented.

结果，可以防止发生在栅极氧化膜中的氧化膜的击穿电压。

Preparation and Structure of HfSixOy Thin Film for High K Gate Dielectrics.

高K栅介质HfSixOy薄膜的制备工艺与结构分析。

The gate insulating film is formed on the channel region.

栅极绝缘膜在沟道区上形成。

In this thesis, the low-temperature (25℃-250℃) sputtered aluminum nitride film was deposited as the gate insulator in organic thin film transistors.

本论文中，低温(25℃-250℃)溅镀氮化铝薄膜被沉积当作有机薄膜电晶体上的闸极绝缘层。

The work done previously is experiential. To this day, the researches on silicon nitride thin film prepared by PECVD stay initial stages, so it is necessary to further develop PECVD. On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

前人做的工作大多也都是经验性的，至今人们对PECVD 氮化硅薄膜的研究还很不成熟，尚处于研究探索的阶段，从而在理论上有必要对PECVD 法氮化硅薄膜做进一步的研究；与此同时，制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管这一课题的需要。

In the TFT ARRAY need multi thin film process.The first gate electrode metal is very important about upper thin film coverage.

中文摘要在TFT ARRAY制程中需经历多次成膜，而第一层之闸极金属对后续绝缘层或金属层之覆盖性相对重要。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。