查询词典 ev

No wonder cadets are always hard as nails ev if they are young.

难怪 军校学生纵使年轻，却都是铁石心肠。

And 6. 9 eV can be attributed respectively to the electronic excitation of different back bond surface states, but the Peaks occurring later under ...

在低的激光能量密度下出现在2.2，3.0，4.2和6.9eV的峰表征不同背键表面态下的电激发过程，而在较高能量密度下相继出现的特征峰分别表示硅表面上的预熔、蒸发、等离子体形成等物理过程的开始。

Ev Berenice seemed a little disappointed at the somewhat commonplace view.

就是白利莱茜也似乎对这种有点平凡的风景稍感到失望。

No one can explain why Lloyd considered BEV "too expensive" but why the proposed 15 years of research into a new infrastructure and technology, less promising than Compressed Natural Gas, would be "practical".

没有人能够解释为什么Lloyd认为电池EV "太昂贵"，为什么反而建议用15多年的研究去进入一个全新的基础设施和技术领域，对比"实用"的压缩天然气，这更加没谱。

When shooting with auto bracketing it is possible to specify exposure variations of up to 2.0 EV.

包围曝光拍摄模式可以最高到2EV，而且每张的范围都可以自定

Results the 16 hearings were successful, one res-igned donation,and two were controvertible and succeeded after re-ev-aluating.

结果：15例听证会通过，其中1例放弃捐赠未行手术，2例有争议经治疗后再次评估通过。

By using these equtions, a vector control scheme of motor that is realized on EV under the d-q coordinates, and current loop and speed loop are included.

控制系统为电流环和速度环的双闭环系统。

The comparison shows that dopping of carbon into GaN produces a significant yellow luminescence around 2.25 eV in PL spectra, and a characteristic excitation band due to C doped about 3.38～2.67 eV has also been observed in PLE spectra.

随着研究的深入，也为了获得更高性能的器件，在GaN材料中存在的一些固有问题(譬如黄带与杂质、缺陷的关系)越来越成为主要障碍，必须认真加以解决。

Ii the occur rence of an y local, national or inter national ev ent or chang e (whether or not for ming par t of a ser ies of ev ents or chang es occur ring or continuing before , and/or after the date hereof) of a political, militar y, financial, economic , currency or

a 任何新法例或规例之颁布或任何现行法例或规例之变更或出现任何性质之事故，按包销商之合理意见会对本集团整体之业务或财务或经营状况或前景或对供股造成重大不利影响；或

Both the GaSe structure and monoclinic structure with fourfold coordination group IV atoms and threefold coordination phosphorous atoms were found to show semiconducting characteristics for group IV phosphides with 1:1 stoichiometry, while other structures show metallic behaviors.

能带计算结果显示SiP单斜晶体结构和GaSe型结构是间接带隙分别为1.123 eV 和 0.123 eV的半导体，SiP其他结构则显示出金属特性。其他化学比为1：1的第四族元素磷化物具有相同的性质。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。