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etching相关的网络例句

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与 etching 相关的网络例句 [注:此内容来源于网络,仅供参考]

Diamond cone arrays are successfully prepared through hydrogen plasma etching. The intrinsic columnar structure of the diamond films leads to the unevenly distributed ion etching rate, which plays an important role in the cone formation.

金刚石薄膜内在的柱状结构使氢离子在刻蚀薄膜时产生非均匀的刻蚀速率,对锥状表面的形成起着重要作用。

Etchant chemicals: Etchant chemical components, it is not the same as the etching rate, etching coefficient.

蚀刻液的化学身分的构不败:蚀刻液的化学组分不不对别,其蚀刻速度不离不不异,蚀刻系数也不不对别。

Etchant surface tension on etching rate and quality of etching, and solid surface (of a copper foil related surface) wettibility.

蚀刻液的暗地压辛不小小不不对蚀刻速度和蚀刻质度的感化,与不流体暗地湿润水平有关。

Results show that this etchant has a stable etching rate to both GaSb and AlGaAsSb compound materials; under suitable solution composition quite low etching rate could be obtained, which are useful for the fabrication of GaSb/AlGaAsSb devices.

该腐蚀液对于GaSb和AlGaAsSb材料具有良好的腐蚀特性和稳定的刻蚀速率。选用合适的溶液组份可以得到较低的刻蚀速率,有利于在器件工艺中进行精确控制。

In addition,the etching mechanism of FeCl3 etching Cu film was analyzed. The recurrent and quiescent etchants affected on the preparation of fine thin-metal electrode was discussed and measured by video microscopy.

此外,分析了FeCl3刻蚀液对Cu膜的刻蚀机理,讨论了刻蚀液在静置和循环条件下对制备FED薄膜型精细电极的影响,借助视频显微镜测试刻蚀后的电极形貌,结果表明,FeCl3刻蚀液在循环条件下刻蚀Cu膜速度均匀,刻蚀后电极边缘整齐。

Two control methods have been studied for the control of TCP etchers; one is EWMA (Exponential Weighted Moving Average), the other one is LS. In EWMA controller, the control parameter is the etching power, while they were etching power, chamber pressure, and gas flow rate in the LS control.

在作法上,我设计了EWMA(Exponential Weighted Moving Average)及LS控制器来模拟与分析,由於EWMA模拟时会需要有一个目标模型,所以我另外以最小平方法和最佳化公式建立一个以腔体压力,功率,氯气流量为变数,蚀刻深度为输出的模型以供EWMA控制器模拟时使用。

"Know how" as mentioned in these Measures shall refer to undisclosed knowledge, experience, methods, and knacks etching the form of drawings, models, technical materials, and criteria etching the aspects of technique process, production direction, product design, quality control, testing, and marketing

本办法所称&费用的支付&是指买方以各种方式支付的全部特许权使用费,包括实付和应付。本办法所称&软件&,是指《计算机软件保护条例》规定的数据处理设备使用的程序或文档。

The results demonstrate that the DO obstructs the silica etching but facilitates the silicon etching in ammonium fluoride solution.

结果表明溶解氧阻碍二氧化硅在氟化铵溶液中的腐蚀、而加快硅的腐蚀。

During etching fine details of the etch-resist pattern can be seriously compromised if either the unexposed etch-resist is incompletely removed or if some of the exposed and polymerised etch-resist is removed prior to chemically etching the metal or alloy.

在本蚀刻蚀刻的细节,抵制模式可以将受到严重损害,如果不是未曝光蚀刻,抵制是一种不完全删除或如果揭露和聚合性蚀刻,抵制被删除之前,化学蚀刻的金属或合金一些。

The structure of the thin film capacitor 1 of this invention is: form sequentially at least the bottom electrode layer 102, the high dielectrics constant oxide film 103 and the upper electrode layer 105 on the semiconductor substrate 101; said upper electrode layer 105 which is a film layer 104 formed by the electrical conductive material which is processable by reactive ion etching, or a multilayered film composed of two kinds of film layers 107 and 108, which are each formed of a conductive material which is processable by at least two kinds of reactive ion etching.

要约 薄膜电容器1是至少在半导体基片101上按顺序形成下部电极层102、高介电常数氧化物膜层103、上部电极层105而构成的薄膜电容器,该上部电极层105由一种仅由可用反应性离子刻蚀加工的导电性材料形成的膜层104,或至少两种由可用反应性离子刻蚀加工的导电性材料分别形成层状的多层膜层107和108构成;经历350℃的热试验之后,对该薄膜电容器1施加OV到2V的驱动电压的薄膜电容器漏电电流密度为1×10 -8 A/cm 2 以下。

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