查询词典 etching

As the youngest art of printing in the world,silk screen block printing shares the same unique form of expression with copperplate etching,lithograph and xylograph.

丝网版画作为版画家族中的一员，有着和铜版画、石版画、木版画共同的独特表现形式，同时丝网印刷也是世界上最年轻、最具实用性的印刷工艺。

A wet chemical etching process for lead zirconate titanate PbZrxTi1?

本文介绍了一种锆钛酸铅薄膜的湿法腐蚀工艺。

It is the fluorosilicic ion that exsits in the slurry and plays an important role in flotation, fluorosilicic ion not only reacted with Fe〓 on the surface of aegirine to form ionic compound, but also formed stable Si-F bond in Si-O etching reaction. Only ionic compound was obtained when it was attached to hematite surface according to the theories of coordination chemistry, Compared with SiF〓, Fatty acid ion preferentially acts with Fe〓 on the minerals surface, therefore, SiF〓 Can't obstruct the adsorption of collector on the surface of hematite completly, but can reduce the flotation recovery of aegirine selectively.

运用FTIR、XPS等测试方法仔细研究了氟硅酸盐抑制剂对含铁硅酸盐钠辉石的选择性抑制作用机理，氟硅酸盐在弱酸性条件下对赤铁矿浮选的抑制作用很微弱，而对含铁硅酸盐钠辉石强烈抑制，从而扩大了两者之间的浮选差异；SiF〓是矿浆中起抑制作用的主要成分，SiF〓不仅与钠辉石表面的Fe〓形成离子型配合物，而且还与Si-O键形成稳定的Si-F共价键，而与赤铁矿表面只能形成离子型配合物，根据晶体配位场理论，与SiF〓相比较羧酸根离子将优先与矿物表面Fe〓发生配位作用，因此SiF〓的存在并不能完全阻碍捕收剂在赤铁矿表面的吸附作用，却能够选择性地抑制钠辉石的上浮。

RSP-810A is single component liquid photoimageable plating-resist allochromatic ink , which is screen printing or roller coating type , it can provide such performance as high resolution , excellent adhesion , so it's fit to professionally make precise inner layer of printed circuit boards and flexible circuit boards , also it's available to production quantity requirement for acid or alkali etching and photograph transfer.

RSP-810A系列为网印或辊涂两用型液态感光线路变色油墨，具有高解象度及良好的密著性，适用于印刷电路板精密内层专业制作及挠性板线路制作，可符合酸碱性蚀刻及细线路板影像转移的量产要求。本系列产品具有以下优点

A process and etchant gas composition for anisotropically etching a trench in a silicon nitride layer of a multilayer structure and an etchant gas composition.

要約 一种在多层结构的氮化硅层中各向异性地腐蚀沟槽的工艺和腐蚀剂气体组分。

Then, by depositing conformal SiO2 on the polysilicon pattern, etching back SiO2 anisotropically in the perpendicular direction and removing the polysilicon with KOH, a sacrificial SiO2 spacer was obtained.

然后在多晶硅台阶上淀积保形性很好的SiO2层，再采用高度各向异性的干法刻蚀进行垂直刻蚀SiO2。在使用KOH去除多晶硅后，可以获得SiO2纳米线。

The method includes the following steps: depositing a non-magnetic layer (3) of sufficient thickness; anisotropically etching the non-magnetic layer to form a steep wall of suitable dimensions at the required position of a flux guide; depositing a magnetic material to form a magnetic layer (9) on the wall in such a manner that the magnetic layer has a thickness corresponding to the required track width; removing undesired deposits of magnetic material but maintaining the magnetic layer on the wall; depositing an insulating material (19a) to cover the magnetic layer.

该方法包括下列步骤：淀积足够厚度的一个非磁层(3)；非均质地蚀刻该非磁层以便在磁通引导的要求位置形成适宜尺寸的阶跃内壁；淀积一个磁性材料，以便在该内壁上形成一个磁层(9)，使得该磁层具有对应于该要求的磁迹宽度的一个厚度；去除不希望的淀积的磁性材料而保持在该内壁上的磁层；淀积一个绝缘材料(19a)以便覆盖该磁层。

The electrochemical-etching is a very simple and appliable method for preparation of regular nanometer-sized pore arrays.

电化学刻蚀方法是一种非常简单实用的制备规则纳米阵列结构的方法。

This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution.

这项技术利用了硅的不同晶面在碱性腐蚀溶液中具有不同腐蚀速率的特性。

This technique takes ad-vantage of the large difference in etching properties for different crystallographic planes in alkaline solution.

这项技术利用了硅的不同晶面在碱性腐蚀溶液中具有不同腐蚀速率的特性。

According to our present broadcasting situation,the thesis proposes using new technology to update and reform the present HFC. It also suggests broadcasting using self-advantage and arranging EPON in order to win the supermarket.

论文从我国广电的现状出发，结合实际，积极倡导采用新技术更新、改造我国现有的HFC网络；倡导广电现阶段利用自身优势，部署EPON网络来赢取市场。

A new general kinetic equation was derived in which the effect of the removal of condensation water was taken into account completely, and was applied to the polyesterification kinetic study of AA/HPHP and AA/NPG. It was found that the reaction order of self-catalyzed polyesterification was not constant. For these polyesterifications, the reaction order was 2.5 at a low temperature, while 3.0 at a high temperature.

考虑缩合水的排除对反应体系的影响，用体积浓度单位推导出一个新的聚酯反应总包动力学方程，并应用到AA/HPHP和AA/NPG两个聚酯化反应的动力学研究中，研究发现，自催化聚酯反应的反应级数并不是固定值，对于AA/HPHP和AA/NPG两个聚酯化反应而言，低温时反应级数为2.5，高温时反应级数为3.0。