查询词典 etching

A modified etching model is proposed, in which the diffusion coefficient is a function of the temperature and concentration and the etching rate constant is a function of temperature.

在前人腐蚀模型基础上考虑扩散系数是浓度和温度的函数，腐蚀速率常数是温度的函数，得到了修正模型。

Moreover, the micro-pattern etching of electrodes and PZT thin films have been investigated, and the fast and successful etchings have been actualized with new etchants and original methods. The technics and mechanism of anisotropic etching of monocrystalline silicon have been studied deeply, for example the influences of the concentration and temperature of tetramethyl ammonium hydroxide on the rate and effect of the anisotropic etching.

此外，结合PZT铁电薄膜热释电单元红外探测器的设计和制备，对电极和PZT铁电薄膜的微图形刻蚀工艺进行了研究，采用新的刻蚀液配方和具有独创性的方法，实现了对PZT铁电薄膜和上下电极快速、成功的刻蚀。

The making process includes: setting insulating solid film on one horizontal rotating carrier with particle detecting unit and etching with single particle beam in the incident angle of 9.6-90 deg to penetrate the film, shifting the film relatively to the single particle beam and etching for the next time, and so on until the film is rotated by one turn to obtain truncated cone shaped, double turned truncated cone shaped or cylindrical single nanometer hole.

本发明将固体绝缘薄膜置于带有粒子检测装置的一个可水平旋转的载体上，用单粒子束刻蚀该薄膜，单粒子束入射角大于等于9.6°、小于等于90°，并且单粒子束在该薄膜底部、顶部、或二者之间与薄膜旋转轴交叉，待单粒子束完全穿透该薄膜后，固体绝缘薄膜底部的粒子监测器反馈使该薄膜被穿透处与单粒子束相对移动1荆再刻蚀，如此反复，直至固体绝缘薄膜旋转一周，获得圆台形、双倒圆台形或圆筒形的单纳米孔。

The majority of early stage copper etching artist did drawings by means of painting at metal plate and indirectly etching the picture. At the same time, it also gave rise to a lot of representative copper etching artists, such as Albrecht Durer (1471-1528),H.

早期的铜版画家多数采用在金属版上进行绘制和间接腐蚀图形的方法作画，同时也产生了一批具有代表性的铜版画家，如丢勒(Albrecht Durer 1471-1528)，伦勃朗

The etching was stopped due to electroosmosis effect when electroconductivity of the etching membrane occurred, and over etching was automatically avoided.

当刻蚀达到电通透时，在电渗流的作用下刻蚀自动停止，从而避免了过刻蚀。

The process includes dry etching the protecting layer of AMR film; wet etching the permalloy layer of the AMR film; and dry etching the transition layer of the AMR film.

一种多层膜的干湿结合蚀刻方法，包括：干法刻蚀各向异性磁电阻效应薄膜的保护层；湿法腐蚀各向异性磁电阻效应薄膜的坡莫合金层；干法刻蚀各向异性磁电阻效应薄膜的过渡层。

Based on the observation of atomic force microscopy, the etching morphology of faces and sections with different crystallographic significance on α-quartz has been studied. The etching morphology on the natural crystal faces hexagonal prism faces (1010 and 01(average10, rhombohedron positive form face 10(average11, rhombohedron negative form face 01(average11 and the sections between any of the two crystal faces has been observed. It is shown that the etching pit on the same simple form has the same shape, while the orientation of the etching pits can be different. Different simple forms have different shapes of etching pits and the shapes of etching pits on positive form and negative form of the same simple form are also different.

通过对α-石英自然晶面六方柱面10(平均值10和01(平均值10、菱面体正形面10(平均值11与菱面体负形面01(平均值11、以及介于上述自然晶面之间的切面进行腐蚀形貌的观察研究发现，石英晶体同种单形的晶面腐蚀坑形态相同，但方位可以有变化，不同单形的晶面腐蚀坑形态不同；同一单形的正形与负形腐蚀坑形状不同；蚀坑形态能够反映晶体的对称性。

On the rhombohedron face {1011}, Dauphine twinning showed different shapes of etching pits between individuals, because rhombohedron positive form {1011} and negative form {0111} appeared on both sides of twin partition line, while Brazil twinning showed symmetry plane between the irregular triangle etching pits of individuals. On the trigonal prism section 11(average20, Dauphine twinning showed different shapes of etching pits between individuals, because trigonal prism positive form {1120} and negative form {2110} appeared on both sides of twin partition line, while Brazil twinning should show symmetry plane between the ellipse or quadrilateral etching pits of individuals, which was not observed.

菱面体{1010}面上存在道芬双晶处，道芬双晶双晶缝合线两端分别是菱面体正形、菱面体负形出露处，导致蚀坑形状不同；菱面体{1011}面上存在巴西双晶处，不规则三角形蚀坑形态的方位关系为对称面关系；三方柱切面{1120}面上存在道芬双晶处，道芬双晶双晶缝合线两端分别是三方柱正形、三方柱负形出露处，导致蚀坑形状不同；三方柱切面{1120}面上存在巴西双晶处，椭圆形或四边形蚀坑方位应为对称面关系，但实验中未见到。

Specialized processes the stainless steel etching and each kind of combination craft, this company uses the craft for the most perfect photosensitive etching craft, this company etching's product is different in the market condition the common silk India plate, produces stainless steel etching line smooth non-tooth India, the design is precise, is perfect, suits the width is 10mm-1500mm, the length is 4000mm, the etching depth is deepest may achieve 0.35mm.

专业加工不锈钢蚀刻及各种组合工艺，本公司所采用的工艺为最完美的感光蚀刻工艺，本公司蚀刻的产品不同于市面上一般的丝印板材，所生产的不锈钢蚀刻线条平滑无齿印，图案精确、完美，适合宽度为10mm-1500mm，长度为4000mm，蚀刻深度最深可达到0.35mm。

With the dose of 7.04 mC/cm2, ODT/Au will become a more strengthened structure and then form a negative resist in the correlation with cross-linking from alkyl matrix, partial breakdown of S-Au bonding and surface adsorption by air-borne species. Thus, it can obtain a gold pattern via gold-etching process. Besides, as a result of massive breakdown of alkyl matrix and S-Au bonding from ODT/Au under irradiation with doses of 64.06 and 128.13 mC/cm2, ODT SAMs would form a loose-packed structure on the gold substrate. The ODT/Au becomes less resistive for gold-etching and a positive gold pattern would form after gold-etching.

结果发现：以50 eV 低能量电子在照射剂量7.04 mC/cm2微影并曝露於大气后，受到来自於ODT/Au碳链间的交联、部分的S-Au键结破坏以及照射后立即曝露大气所吸附於表面的碳氧化物种的共同影响下，ODT SAMa於Au膜基材上将形成更紧密复杂的结构而作为负型阻剂，经后续湿式蚀刻15分钟后将显影出来Au的负型图案；当提升照射剂量至64.06及128.13 mC/cm2后，由於ODT/Au上碳链及S-Au键结的大量破坏，将使ODT/Au结构不能稳固且紧密地排列於Au膜基材上，显影时Au蚀刻液将容易穿过ODT SAMs抵达S/Au界面而移除Au，而形成正型图案。

Neither the killing of Mr Zarqawi nor any breakthrough on the political front will stop the insurgency and the fratricidal murders in their tracks.

在对危险的南部地区访问时，他斥责什叶派民兵领导人对中央集权的挑衅行为。

In fact,I've got him on the satellite mobile right now.

实际上 我们已接通卫星可视电话了