查询词典 etchant

Copper was etched from the unprinted areas of the PEN film using an etchant bath containing a ferric chloride etchant solution of strength 42° Baume supplied by RS.

铜蚀刻从PEN薄膜的未印刷领域使用的蚀刻剂浴含有三氯化铁蚀刻剂的力量解决42 °波美由RS供应。

Copper was etched from the uncoated areas of the FR4 board using an etchant bath containing a ferric chloride etchant solution of strength 42° Baume supplied by RS.

铜被蚀刻从FR4电路板的涂层领域的腐蚀剂浴使用含有三氯化铁蚀刻剂的力量解决42 °波美由RS供应。

Copper was etched from the unprinted areas of the FR4 board using an etchant bath containing a ferric chloride etchant solution of strength 42° Baume supplied by RS.

铜被蚀刻从FR4电路板的未印刷领域使用的蚀刻剂浴含有三氯化铁蚀刻剂的力量解决42 °波美由RS供应。

Stainless steel 35-42 °Be FeCl 3 35-55 Mild steel 35-42 °Be FeCl 3 35-55 Beryllium copper 30-42 °Be FeCl 3 or 40-55 ammoniacal copper or 33 °Be acidic CuCl 2 Copper and copper 30-42 °Be FeCl 3 or 40-55 alloys ammoniacal copper or 33 °Be acidic CuCl 2 Inconel and other 38-42 °Be FeCl 3 or 45-55 high nickel alloys conc nitric/conc hydrochloric acid/water 1:1:3 Aluminium 20% NaOH 60-90 or conc hydrochloric 20-65 acid/water 1:4 55 or alkaline potassium ferricyanide Brass 30-42 °Be FeCl 3 or 40-55 ammoniacal copper or 33 °Be acidic CuCl 2 Molybdenum Alkaline potassium 55 ferricyanide 40-55 or 40 °Be Fe(NO 3 ) 3 Titanium 10-50% HF 30-50 (optionally with HNO 3 )*The concentration of etchant (column 2) is measured in Degrees Baume where:°Be = 145 (SG - 1/SG); and SG is the specific gravity of the solution.

表美- 00002表2金属共同腐蚀剂*温度° C的不锈钢35-42 °成为氯化铁三 35-55低碳钢35-42 °成为氯化铁三 35-55铍铜30-42 °成为氯化铁3或40-55氨铜或33 °是酸性CuCl的2铜及铜30-42 °成为氯化铁三或40-55合金氨铜或33 °是酸性CuCl的2镍铬铁合金和其他38-42 °成为三氯化铁3或45-55高镍合金浓硝酸/浓盐酸/水1时01分03秒铝20％的NaOH浓盐酸60-90或20-65酸/水1：4 55或氰化钾铜30-42 °碱性钾成为三氯化铁3或40-55氨铜或33 °是酸性CuCl的二钾55钼碱性铁氰化钾40-55或40 °成为铁Fe（NO 3）3钛10-50％的HF 30-50*的浓度对侵蚀剂（栏2）测量波美度其中：°成为= 145（法兴- 1/SG）；和SG是比重。

The fabrication processes for nano-silicon-tips using a (100) single crystal silicon wafer by the anisotropic wet etching in the KOH etchant were designed. Based on the experiment and the model of {411} crystal planes, the crystal planes of silicon tips were analyzed. Through discussing the effect of the mask direction on tip shapes, the process parameters to get high aspect ratio nano-silicon-tips were achieved.

设计了硅尖制备的工艺流程，采用KOH溶液湿法各向异性腐蚀(100)单晶硅的方法制备硅尖，根据实验结果和{411}晶面模型，分析了硅尖侧壁的组成晶面，讨论了掩模偏转方向对硅尖形状的影响，得到了制备高纵横比纳米硅尖的工艺参数。

The fabrication processes for nano-silicon-tips using a (100) single crystal silicon wafer by the anisotropic wet etching in the KOH etchant were designed.Based on the experiment and the model of {411} crystal planes,the crystal planes of silicon tips were analyzed.

设计了硅尖制备的工艺流程，采用KOH溶液湿法各向异性腐蚀(100)单晶硅的方法制备硅尖，根据实验结果和{411}晶面模型，分析了硅尖侧壁的组成晶面，讨论了掩模偏转方向对硅尖形状的影响，得到了制备高纵横比纳米硅尖的工艺参数。

A process and etchant gas composition for anisotropically etching a trench in a silicon nitride layer of a multilayer structure and an etchant gas composition.

要約 一种在多层结构的氮化硅层中各向异性地腐蚀沟槽的工艺和腐蚀剂气体组分。

Etchant chemicals: Etchant chemical components, it is not the same as the etching rate, etching coefficient.

蚀刻液的化学身分的构不败：蚀刻液的化学组分不不对别，其蚀刻速度不离不不异，蚀刻系数也不不对别。

May etch in any etchant, except chromic/sulfuric.

可以蚀刻在任何etchant，除铬/sulfuric。

The morphologies of the CdZnTe etch pits developed by four etchants including Nakagawa, Everson, EAg1 and EAg2 solutions are studied. The results show that the etch pits of EAg2 etchant on the (111) B surface are flat-bottomed. And the etch pits of Everson etchant on (111) B include flat-bottomed pits and pyramidal pits with different slant directions, while the positions of pyramidal pits don′t move as the surface layer is continuously removed.

对碲锌镉晶体常用的Nakagawa、Everson、EAg1和EAg2四种腐蚀剂在碲锌镉材料（111）晶面上的腐蚀坑坑形进行了研究，结果发现，EAg2腐蚀剂在（111）B面上的腐蚀坑为平底坑，Everson腐蚀剂在(111)B面上产生的腐蚀坑包括平底坑和带有不同倾斜方向坑底的三角锥形坑，进一步的研究还表明，三角锥形坑并未沿着坑底的倾斜方向向下延伸。

Neither the killing of Mr Zarqawi nor any breakthrough on the political front will stop the insurgency and the fratricidal murders in their tracks.

在对危险的南部地区访问时，他斥责什叶派民兵领导人对中央集权的挑衅行为。

In fact,I've got him on the satellite mobile right now.

实际上 我们已接通卫星可视电话了