查询词典 erasing

In Realm of Secrets or the earlier paintings, we can find he used the end of the pen to scrape oil pigments on the canvas to produce imprints. In this way, both the action of erasing and leaving traces are concretely displayed simultaneously. The Greek grapho which means "writing" in Modern English derives from the trace on the beach left by a crab's crawl.

我们也可以於《秘境》或其画者早先其他画作中看到偶画笔尾端刮除油料呈现笔痕的繁复动作，此动作具体同时展现刮除和留下痕迹（书写，最初的动作；希腊文「书写」grapho，源自螃蟹於沙滩爬行的痕迹）。

Blit a piece of the background over the sprite's current location, erasing it.

在背景上blit精灵所在的位置，擦掉它。

Since it is fully integrated in every EEPROM chip, there is no need to take out the EEPROM chip for erasing and programming.

因为它是完全集成在每一个的eeprom芯片，因此没有必要采取出的eeprom芯片的擦除和编程。

Let this flame burn through this web of light, erasing all memories of failure, of discordance.

让这个火焰烧透这个光网，抹去所有失败与不合的记忆。

Instead of erasing everything else with Eraser tool, we just organized our way to make this simple and clean.

而不是抹去一切与橡皮擦工具一样，我们刚刚举办了我们的方式，使这个简单干净。

Using the Eraser Tool set to 0% Hardness, start erasing some of that light, as shown below.

使用橡皮擦工具硬度设置为0％，开始擦除，如下图所示。

I don't know what is erasing them.

我不知道他们是什麼擦除。

We need to note we are not anywhere close to erasing memory in humans.

我们需要注意的是，我们还远远不能消除人的记忆。

Further, the degradation due to single-electron locally trapping/de-trapping in horn-shaped SuperFlash does not occur in the triple-gate flash cell. This is because of planar poly-to-poly erasing in the triple-gate flash cell instead of tip erasing in the horn-shaped SuperFlash cell.

但是，在这篇论文中，我们发现经过长期循环擦写后，三栅 SuperFlash闪存在电子被擦除后的阈值电压的增加不是因为编程时而导致的浮栅氧化物的退化，而是由于擦除时所造成的隧穿氧化物的退化。

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。

I am accused of being overreligious," she said in her quiet, frank manner,"but that does not prevent me thinking the children very cruel who obstinately commit such suicide.""

客人们在卡罗利娜·埃凯家里，举止就文雅一些，因为卡罗利娜的母亲治家很严厉。

Designed by French fashion house Herm è s, this elegant uniform was manufactured in our home, Hong Kong, and was the first without a hat.

由著名品牌 Herm è s 设计，这件高贵的制服是香港本土制造，是我们第一套不配帽子的制服。