查询词典 epitaxy

The morphology and density distribution of etch pit s formed by Schaake and Chen etchants on the {111} B face of HgCdTe liquid phase epitaxy films are studied.

通过对Schaake和Chen腐蚀剂在HgCdTe外延材料(111)B面腐蚀坑特性的研究，揭示了HgCdTe液相外延材料中的缺陷特征及其密度分布规律。

The morphology and density distribution of etch pits formed by Schaake and Chen etchants on the {111} B face of HgCdTe liquid phase epitaxy films are studied.

通过对Schaake和Chen腐蚀剂在HgCdTe外延材料(111)B面腐蚀坑特性的研究，揭示了HgCdTe液相外延材料中的缺陷特征及其密度分布规律。

Rowth and defects of LiGaO2 crystal used for GaN epitaxy.

aN 外延衬底LiGaO2晶体的生长和缺陷。

With the development of molecular-beam epitaxy and microfabrication techniques, people can arrange the atoms and moleculars at will and make various zero-dimensional, one-dimensional and two-dimensional systems even single molecular devices.

随着分子束外延等超薄生长技术和精细束加工技术的不断发展和完善，使人们能够按照自己的意愿排列原子、分子，制备出各种各样的零维、一维和二维纳米结构，甚至单分子器件。

The InGaAs/GaAs/AlGaAs strained layer quantum well lasers were grown by molecular beam epitaxy. Ridge waveguide InGaAs/GaAs/AlGaAs strained layer quantum well lasers operating in the fundamental transverse mode up to 140 mW at a wavelength of 980 nm were fabricated.

利用分子束外延生长了InGaAs/GaAs/AlGaAs应变量子阱激光器材料并研制出基横模输出功率大于140 mW，激射波长为980 nm的脊形波导应变量子阱激光器，其微分量子效率为0.8 W/A，垂直和平行结平面方向远场发散角分别为28°和6.8°。

In this MS thesis, we employed the molecular beam epitaxy method to deposit amorphous HfO2 dielectrics ?

本实验室使用分子束磊晶的方法在矽晶片上成长HfO2高介电常数？

Since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.

自从分子束外延生长技术出现以来，半导体物理的研究获得许多惊人的突破。

Two InAs quantum dot samples have been grown by the solid source molecular beam epitaxy and fabricated to detectors.

利用分子束外延生长获得的两个InAs量子点样品制备了n型的量子点红外探测器。

At the same time, the developments of molecular beam epitaxy and metal organic chemical vapor deposition have made the characteristics of the devices improved rapidly.

与此同时，随着分子束外延和金属有机化学气相沉积等生长技术的发展，使VCSEL器件得以飞速提高。

In general, researchers obtained SiGeC films using molecular beam epitaxy and/or chemical vapor deposition methods.

目前大多采用分子束外延和化学汽相沉积方法制备SiGeC薄膜。

It has been put forward that there exists single Ball point and double Ball points on the symmetrical connecting-rod curves of equilateral mechanisms.

从鲍尔点的形成原理出发，分析对称连杆曲线上鲍尔点的产生条件，提出等边机构的对称连杆曲线上有单鲍尔点和双鲍尔点。

The factory affiliated to the Group primarily manufactures multiple-purpose pincers, baking kits, knives, scissors, kitchenware, gardening tools and beauty care kits as well as other hardware tools, the annual production value of which reaches US$ 30 million dollars.

集团所属工厂主要生产多用钳、烤具、刀具、剪刀、厨具、花园工具、美容套等五金产品，年生产总值3000万美元，产品价廉物美、选料上乘、质量保证，深受国内外客户的青睐