查询词典 epitaxy

Are used to study the structure, crystallograph quality, surface structure, conductivity and chemical status of grown films. The minimum full width at half maximum of XRD rocking curve of CdTe, ZnSe and ZnTe epilayers are 630, 133, 110 arcsec respectively. Compared to MBE and MOVPE, ICB allows the epitaxy at lower temperature onto various substrates with higher deposition rates.

实验在GaAs等衬底上分别生长了CdTe、ZnTe、ZnTe单晶薄膜，其X光摆动曲线半高宽分别达到了630、133和110弧秒，与MBE、MOVPE相比，ICB技术外延时，大幅度地降低了生长温度，提高了生长速率，在实际应用方面具有特别重要的意义。

Based on the project requirements, the research has focused on the confined electronic states in the semiconductor surface quantum wells. The moden quantum theory and advanced material growth technology have been used. The interband transitions in the surface quantum well have been studied by the in-situ photo-modulated reflection spectroscopy combined with the molecular beam epitaxy system. The optical transitions, including the tansition between ground or excited states of the electron and hole states, have been directly observed.

根据项目任务书的要求，本项研究在现代量子理论与先进材料生长技术基础上对半导体表面量子阱阱结构中的受限电子能态进行系统的光谱实验与理论研究，通过与分子束外延设备直接耦合的光调制光谱手段在原子层量级上直接观测到了表面量子阱中本征能态间的光跃迁特性，其中包括基态间的跃迁和激发态间的跃迁。

This processes of SiGe planar integration are compatible with LOCOS, epitaxy under low pressure, poly silicon emitter, MBE SiGe and UHV/CVD.

在国内，首次研发出了SiGe平面集成技术工艺，开发研制出了SiGe集成低噪声放大器。

Based on the above investigation of ideal layer-by-layer growth process, the surface roughening phenomena during the real epitaxial growth are discussed. Some important microscopic dynamic models for molecular-beam epitaxy , which have attracted much attention recently, are studied. Using the master-equation method, the corresponding growth equations are directly derived, and then the scaling behaviors, the universalities, as well as the crossover effects are determined.

在这一理想层状外延生长研究的基础上对实际外延生长过程中十分显著的表面粗化现象进行了探讨，深入研究了几类近年来受到广泛关注的描述分子束外延生长的重要的微观动力学生长模型，采用主方程方法直接得到了相应的非线性生长方程，并确定了标度性质、普适类以及渡越行为。

In epitaxy experiments, the substrate is always thought to be smooth and uniform.

由于缺少必要的参数，还不能使用这个公式直接计算岛的大小，但是可以利用这个公式定性的解释其他的一些实验现象。

These devices are fabricated utilizing molecular beam epitaxy manufacturing techniques and feature rugged construction and consistent electrical performance.

这些设备是利用分子束外延制备的制造技术和坚固的结构和功能一致的电气性能。

The higher value is comparable to those obtained in CVD epitaxy.

这个高的数值可以和从化学气相淀积外延得到的数值相比拟。

The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs l...

结果表明，低温外延是制备较高质量外延层的一种可取方法。

In the end of these studies, the hetero-eptaxial growth of these three films was studied for the first time.〓 and 〓 multilayers show good epitaxy.

最后，我们首次对这三种薄膜之间的外延生长进行了初步的研究，发现y多层膜具有良好的外延关系。

Precise measurement and control of GaN-film thickness is very important for GaN-based materials epitaxy and devices fabrication.

在GaN基材料外延和器件制作中，对外延膜厚度的精确测量和控制至关重要。

It has been put forward that there exists single Ball point and double Ball points on the symmetrical connecting-rod curves of equilateral mechanisms.

从鲍尔点的形成原理出发，分析对称连杆曲线上鲍尔点的产生条件，提出等边机构的对称连杆曲线上有单鲍尔点和双鲍尔点。

The factory affiliated to the Group primarily manufactures multiple-purpose pincers, baking kits, knives, scissors, kitchenware, gardening tools and beauty care kits as well as other hardware tools, the annual production value of which reaches US$ 30 million dollars.

集团所属工厂主要生产多用钳、烤具、刀具、剪刀、厨具、花园工具、美容套等五金产品，年生产总值3000万美元，产品价廉物美、选料上乘、质量保证，深受国内外客户的青睐