查询词典 epitaxy

Firstly, the theory and fabrication of molecular beam epitaxy are described in detail.

本文首先详细介绍了分子束外延设备的原理和构造。

However, epitaxy of PZT films directly on Si substrates is very difficult because of the lattice mismatch between them and the interdiffusion owing to the high growth temperature during deposition.

摘要 将PZT 薄膜沉积於Si 基板上是非常困难的，主要由於两者晶格常数的不匹配以及在高温沉积时相互间的扩散问题。

Resistance pure water system, 3-waste treatment system, and shock-proof working-table, and about 80 sets of micro-electrical-mechanical technical equipment are installed, including AMS200 ICP plasma etching system, ICP-2B etching machine, AWB04 bonding machine, MA6/BA6 Karlsus double-face photolithography machine/bonding machine, POLI-400 chemical-mechanical-polishing tool, WL2040 aluminum-wire press welder, OPTI CAOT 22i decktop precision spin coasting system, ZSH406 automatic dicing saw system, DQ-500 plasma photoresist-removing machine, HXS150S automatic centrifugal spinner, AXTRON MOCVD metal organic chemical vapor deposit system, 4470 micro-control 4-tube diffusing furnace, type 4371 LPCVD low pressure chemical vapor deposit system, OMICRON MBE molecular beam epitaxy system, JS-3X100B magnet-control spattering equipment, PECVD-2E plasma deposit apparatus, ZZSX500C electron-beam vapor equipment, JC500-3/D magnet-control spattering-coating machine, H63-14/ZM quartz-tube cleaning machine. Measurement instruments include OLS1100 Confocal Laser Scanning Microscope, DEKTAKIII Surface Profiler, D41-11A/ZN 4-probe resistance test instrument, Nikon L150 metallurgical microscope, and so on.

中心现有80多台各种微机电工艺设备，如AMS 200深硅等离子体刻蚀系统、ICP-2B刻蚀机、AWB04键合机、MA6/BA6 Karlsuss双面光刻机和键合机、POLI-400化学机械抛光机、WL2040铝丝压焊机、OPTI CAOT 22i喷涂胶机系统、ZSH406全自动划片机、DQ-500等离子去胶机、全自动清洗甩干机、AXTRON MOCVD金属有机物化学气相沉积系统、4470微控四管扩散炉、4371LPCVD低压化学沉积系统、OMICRON分子束外延系统、JS-3X100B磁控溅射台、PECVD-2E等离子淀积台、ZZSX500C电子束蒸发台、JC500-3/D磁控溅射镀膜机、石英管清洗机，以及多种常用测试仪器，如OLS1100激光共聚焦显微镜、DEKTAK-III台阶测量仪、D41-11A/ZN四探针电阻测试仪、Nikon L150金相显微镜等。

An originative, technological approach that a doped poly-silicon layer is grown on extrinsic base before MBE SiGe base epitaxy is proposed, which minimizes the contact resistance of base and eliminates the native oxide at both internal and extrinsic base pads.

对SiGe HBT器件的性能进行了仔细研究，提出了在进行SiGe基区外延之前淀积掺杂多晶硅的新器件结构，该结构消除了外基区掺杂Poly—Si和基区SiGe接触之间的自然氧化层对基区接触电阻的影响，减少了基区接触电阻。

A new Permalloy single crystalline phase with body-centered-cubic structure has been achieved on GaAs(001) by molecular beam epitaxy.

Fe在GaAs(001)磁单轴各向异性的机理等4个方面展开了研究，得到了以下结果： 1。

This study is focusing what the variation of cooling coils pipe pitch and deposit direction, which will affect the temperature distribution of the epitaxy produce zone for rotation dick type of MOCVD system, the cooling coils is at the bottom of the reaction chamber. In other, we also consider what the different if they has exhaust device at reaction chamber too.

本研究主要是对转盘式有机金属化学气相磊晶系统反应腔底部冷却管排之管排间距或摆置方位等之变化，对磊晶工件区之温度分布影响；同时，也对冷却管排底下空间中亦做若有抽气时之温度分布差异分析。

This dissertation mainly focused on the growth and characterization of GaN based materials grown by radio frequency plasma assisted molecular beam epitaxy.

本文研究了GaN和AlGaN/GaN材料的射频等离子体分子束外延生长及其特性，并对相关器件工艺中的若干重要问题如刻蚀、欧姆接触等，进行了初步探索。在前人工作的基础上，进一步优化了GaN材料的生长工艺，并深入研究了材料生长过程中的一些重要问题。

This dissertation mainly focused on the growth and characterization of GaN based materials grown by radio frequency plasma assisted molecular beam epitaxy. Some of the devices related technics, such as etching and ohmic contact, were also discussed.

本文研究了GaN和AlGaN/GaN材料的射频等离子体分子束外延生长及其特性，并对相关器件工艺中的若干重要问题如刻蚀、欧姆接触等，进行了初步探索。

The main task of this paper is to investigate the growth of high quality single crystalline Zinc Oxide thin film on sapphire (0001;α-Al_2O_3) substrate via radio frequency plasma-assisted molecular beam epitaxy. The work will lay a foundation for application of novel semiconductor material, ZnO, in the field of photoelectronic devices.

本论文的主要任务是研究在蓝宝石(0001)衬底上利用射频等离子体辅助分子束外延系统生长出高质量的氧化锌单晶外延薄膜，为ZnO这一新颖的半导体材料在光电子器件方面得到应用打下基础。

InNSb alloy films were prepared on GaAs (001) substrates by N2 radio frequency plasma-assisted molecular beam epitaxy, the N composition and micro-structures of the samples were characterized by atom force microscopy, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

本文利用射频氮等离子辅助分子束外延（RF-MBE技术在GaAs（001）衬底上生长稀氮InNSb半导体薄膜，并通过原子力显微镜、电子扫描显微镜、X射线衍射仪、拉曼散射光谱等测量手段对样品的微结构和氮组分等进行了表征。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。