查询词典 epitaxial

The intensity ratio of TO and LO inMCT was observed to be different. Such difference was explained in terms of the different Ramangeometry arrangement.〓. The laser-induced micro-photoluminescence in the range of 1000～5000〓(1.34eV～1.83eV) was found for the first time in LPE MCT epilayer. The center of photoluminescence wasat 2750〓 or 1.62eV and the FWHM of luminescence was 2000〓 or 0.25eV. We assume thatthe photoluminescence is due to recombination of electron from an anion vacancy resonance levelto the top of valance. In addition, new Raman shift was observed at 750〓 in LPE MCTepitaxial film.〓. The laser-induced micro-photoluminescence with quasi-periodic structure was observed forthe first time at room temperature in one of MOVPE MCT epitaxial film samples. The range offluorescence was from 1.46eV to 2.21eV, i.e., 1.73eV above the conduction band edge.

2首次在LPE生长的碲镉汞外延薄膜的显微Raman谱中，在1000～5000〓范围发现了激光激发显微荧光，该荧光的发光范围换算为电子伏特标度为1.34eV～1.83eV，荧光的发光中心大约位于2750〓，即1.62eV，发光的半峰高宽约为2000〓或0.25eV；指出该显微荧光来源于碲镉汞薄膜中的阴性离子空位共振能级的激光激发发光；观察到了碲镉汞外延薄膜中一个新的Raman散射峰，位于750〓位置； 3首次在一块用MOVPE方法生长的〓Te外延薄膜的显微Raman谱中，发现了1.46eV至2.21eV范围并伴随有周期结构的显微荧光峰，该发光峰对应的能带中心位于〓Te材料导带底上方1.73eV，通过研究得出样品在1.46eV至2.21eV范围的显微荧光峰是由于改进 MOCVD 生长工艺，提高了碲镉汞外延薄膜的结构质量所致；通过分析指出该显微荧光来源于外延层中的阴性离子空位的共振能级发光。

We have epitaxially grown ultrathin Pb and Co films on the Cu(111)surface bymolecular beam exitaxialgrowth technique,and studied in detail the growthand surface alloying of submonolayer Pb on Cu(111),the shift of Pb 5d core levelbinding energy on Cu(111),the surfactant-assisted epitaxial growth of Co on Cu(111)using Pb as a surfactant,and the spin exchange splitting of ultrathin Co films onCu(111)using synchron radiation photoemission spectra as well as Auger electronspectraand low energy electron diffraction.

利用分子束外延生长技术在单晶Cu(111)表面外延生长了超薄Pb和Co膜，并利用同步辐射光电子发射谱，结合俄歇谱和低能电子衍射，详细研究了超薄Pb在Cu(111)表面的生长、表面合金化，Cu(111)表面Pb的5d芯能级位移，以Pb作活性剂时Co膜的活化外延生长，以及超薄Co在Cu(111)表面的自旋交换劈裂，得到了一些有意义的结果。

In epitaxial growth, the particle aggrades into substrate with a average rate.

在外延生长中，可以认为生长单元是以平均频率随机地沉积到基底表面上，生长单元在基底上的扩散也具有随机特征。

The intercrossing angle of the two kinds of epitaxial lamellae is about ±45℃,while the contact planes should be (010) of IPP and (100) of LLDPE.

两种片晶的c轴成45°交角，附生结晶的接触面为LLDPE的(100)和IPP的(010)。

The ordering and kinetic surface roughening processes are studied systematically and theoretically to investigate the mechanism of the Epitaxial growth.

本论文对外延生长的有序化和动力学表面粗化过程进行了系统的理论研究，从物理本质上了解材料的外延生长机制，为人工设计高质量的新材料提供理论基础。

Based on the above investigation of ideal layer-by-layer growth process, the surface roughening phenomena during the real epitaxial growth are discussed. Some important microscopic dynamic models for molecular-beam epitaxy , which have attracted much attention recently, are studied. Using the master-equation method, the corresponding growth equations are directly derived, and then the scaling behaviors, the universalities, as well as the crossover effects are determined.

在这一理想层状外延生长研究的基础上对实际外延生长过程中十分显著的表面粗化现象进行了探讨，深入研究了几类近年来受到广泛关注的描述分子束外延生长的重要的微观动力学生长模型，采用主方程方法直接得到了相应的非线性生长方程，并确定了标度性质、普适类以及渡越行为。

The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si.sup.+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer.

专利简介本发明系关於一种紫外光检测器及制程方法，其主要系在一基板上形成一缓冲层，利用磊晶法在缓冲层上形成一P型氮化镓系层，并接著以离子布植技术将Si+离子适当地布植於该P型氮化镓系层中，形成一N型氮化镓系层及包覆在此N型氮化镓系层中且布植浓度更高的另一N型氮化镓系层，最后在该P型氮化镓系层及第二N型氮化镓系层上分别镀上一环状金属层及另一金属层，以作为欧姆接触层。

GaAs RF switch MMICs for cellular phone; GaAs RF power amplifier MMICs for cellular phone; GaAs RF switch MMICs for base station; GaAs RF attenuator MMICs for base station; RF module for base station; GaAs power amplifier MMICs for CATV; MOSFET power devices;SAW resonators; SAW filters; SAW duplexers; N type and P type 4＂-6＂silicon epitaxial wafers.

这次参展的产品有：用于移动蜂窝电话的砷化镓射频单片集成电路；用于移动通信基站的射频IC及电路模块；用于CATV的砷化镓IC；MOSFET等功率器件；声表面波谐振器；声表面波滤波器；声表面波双工器；4＂-6＂N型和P型各类硅外延片。

There are three proce dures in LED production, namely epitaxial wafer, tube core and encapsulation.

在LED生产过程中，主要有外延片生长、芯片和封装三个环节。

The epitaxial growth of Er_2O_3 films on Si(001) and Si(111) have been investigated.

我们研究了Er_2O_3薄膜在Si(001)和Si(111)衬底上的生长。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。