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epitaxial相关的网络例句

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与 epitaxial 相关的网络例句 [注:此内容来源于网络,仅供参考]

Metalorganic chemical vapor deposition has been used to produce high quality thin films and epitaxial layers.

金属有机化学气相沉积,是一种可制备各种高质量薄膜和外延薄层的技术。

High quality GaN is grown on GaN substrate with stripe pattern by metalorganic chemical vapor deposition by means of epitaxial lateral overgrowth.

采用侧向外延方法,在制作了条形掩膜图形的GaN衬底上用MOCVD生长高质量GaN。

The main contents are: Status and prospects of micro/nano fabrication technology, semiconductor substrates, vacuum science and plasmas. Several unit processes of microfabrication like diffusion, thermal oxidation, ion implantation, optical and nonoptical lithography, etching, physical deposition, chemical vapor deposition and epitaxial growth. Process integration of these unit processes for example CMOS technique and silicon bipolar technique, microelectro mechanical systems and some nano fabrication technologies will be introduced.

主要内容有:微米/纳米制造技术的现状和展望、半导体衬底、真空科学和等离子体,各种单项微电子加工工艺,如扩散、热氧化、离子注入、光学和非光学光刻、刻蚀、物理淀积、化学气相淀积、外延生长等,以及各种单项工艺的集成技术,如CMOS技术和硅双极型工艺技术,并初步介绍微电子机械系统和纳米加工技术。

In other words, the moleculesubstrate interactions are on the one hand too weak to affect the Au(111) surface reconstruction but, on the other hand, strong enough to dictate the epitaxial growth of the organic overlayer.

旋转域的独立的一些观察,证明作为底物作用的分子模板指导订购。有趣的是,不同的域分隔突然没有国界,但往往走在不同的方向逐步过渡。

Observation of epitaxial overlayer of metals at atomic level has beensuccessfully observed in field ion microscope with 5 ns pulsed-laser heating.

本文用场离子显微镜对金属外延层的结构进行了原子级的观察。

The results show that the thin film has a pseudocubic perovskite structure and the good the epitaxial direction.

结果表明,薄膜为赝立方钙钛矿结构,晶格常数为3.861 nm,晶格失配度为2.1%,具有良好的单晶外延结构和较光滑的表面,且薄膜中晶粒的生长模式是&柱状&模式。

For obtaining good structural perfection, the molecular beam epitaxial growth of Ge〓Si〓 on Si substrate should not only be in pseudomorphic form but also in layer-by-layer growth stage.

本文通过对Ge〓Si〓/Si异质体系的生长模式的研究发现,Ge〓Si〓在Si衬底上只能在一定的厚度范围内保持二维生长,超过这一厚度范围就变成三维生长。

Sethian, is one of the most important and revolutionary achievements of our time. Applications and extensions of this method range from capturing multiphase fluid dynamical flows to special effects in Hollywood films to visualisation, image processing, control, epitaxial growth, computer vision and many others. Professor Osher has served on the editorial boards of a number of high-impact international journals, including the Journal of Computational Physics .

Sethian 教授共同提出,用於获取运动边线的水准集合方法,是当今世上最重要和革命性的成就之一,它的应用及延伸从获取多相动态流,到荷李活电影所需要的特殊图像视觉效果处理、控制、外延生长、电脑视觉以及其他方面等。

Thus, the secondary edge reflector heats the edge and reduces thermal gradients across the susceptor and the semiconductor wafer to inhibit slip dislocations in the wafer during epitaxial layer deposition.

这样,二次边缘反射器便可加热外边并减小横越衬托器和半导体晶片的热梯度,从而可在外延生长层沉积时阻止晶片内滑移位错的发生。

We have measured the in-plane and out-of-plane resistivity of epitaxial Bi-2201 films grown on untilted and tilted(001)SrTiO3substrates.

测量了Bi2Sr2-xLaxCuO6薄膜样品的电阻率,得到了正常态平面电阻率ρab与温度的正比关系。

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